321 DIODE Search Results

HFE4080-321

Abstract: DIODE XBA HFE4080-321XBA 850 VCSEL TO-46
Contextual Info: Datasheet - HFE4080-321/XBA HFE4080-321/XBA VCSEL Connectorized, Data Communications, ST Connectorized TO-46, 400mW Representative photograph, actual product appearance may vary. Due to regional agency approval requirements, some products may not be available in your

irf3203

Abstract: irf3203 MOSFET IRFP320-3 IRFP3203 irfp321 irf320 F321 IRF N-Channel Power MOSFETs jys 33 ST E 722
Contextual Info: IRF720/721/722/723 IRFP320/321/322/323 IRF320/321/322/323 N’CHANNEL POWER MOSFETS FEATURES • Lower R ds on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area

Contextual Info: InnovativeInnov Innovative VCSEL Solutions . Delivered Advanced Optical Components 1.25Gbps 850nm VCSEL TO-46 Package HFE4081-321, HFE4082-321 Key Features: • • • • • • Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature

U321

Abstract: U320 DIODE s31a IRFR321 ui 321
Contextual Info: N-CHANNEL POWER MOSFETS IRFR320/321 IRFU320/321 FEATURES D-PAK • Low er R ds < on • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

C8051T620

Abstract: 8051-COMPATIBLE C8051F34A mark S1DL S1DL
Contextual Info: C8051T620/621/320/321/322/323 Full Speed USB EPROM MCU Family Analog Peripherals - 10-Bit ADC ‘T620/320/321 only • Up to 500 ksps • Up to 21 external inputs • VREF from on-chip VREF, external pin, Internal 1.8 V - Regulator or VDD Internal or external start of conversion source

Contextual Info: 赤外発光ダイオード GaAs INFRARED EMITTING DIODES(GaAs) EL-321 EL-321は縦型透明樹脂でモールドされたGaAs赤外発光ダイオー •外形寸法 DIMENSIONS（Unit : mm） ドです。薄型、小型で実装が容易です。 φ2

ifu320

Abstract: fu320 IFR321 fr320
Contextual Info: IRFR320/321/322 IRFU320/321/322 HARRIS N-Channel Power MOSFETs Avalanche-Energy-Rated A u g u st 1991 Packages Features IR F U 3 2 0 /3 2 1 /3 2 2 T O -2 5 1 A A TOP VIEW • 2.6A and 3.1A, 350V and 400V • rDS on = 1 .8 0 fl and 2.5CI > SOURCE • Single Pulse Avalanche Energy Rated

Contextual Info: SHD126146 SHD126146P SHD126146N SHD126146D SENSITRON SEMICONDUCTOR USE DATA SHEET 321 TECHNICAL DATA DATA SHEET 315, REV. - SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200•C Operating Temperature Applications: œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode

Contextual Info: SHD126146 SHD126146P SHD126146N SHD126146D SENSITRON SEMICONDUCTOR USE DATA SHEET 321 TECHNICAL DATA DATA SHEET 315, REV. - SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200•C Operating Temperature Applications: œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode

Contextual Info: SKM 150GB173D Absolute Maximum Ratings Symbol Conditions IGBT *9 &* &*< =9 SKM 150GB173D 6 7 02 ;1 8* 7 .  &  7 .1 C  5C 6? 7 .21 8*  Typical Applications  +*        232 '    321 +* ,* "    321 ' .011 ,* 4 "  

Contextual Info: HITACHI ADE-208-321 Z HVU132 Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI Features Rev. 0 Feb. 1995 Outline • Low capacitance.(C=0.5pF max) • Low forward resistance. (rp2.0Q max) • Ultra small Resin Package (URP) is suitable for

Contextual Info: SKM 150GB173D Absolute Maximum Ratings Symbol Conditions IGBT *9 &* &*< =9 SKM 150GB173D 6 7 02 ;1 8* 7 .  &  7 .1 C  5C 6? 7 .21 8*  Typical Applications  +*        232 '    321 +* ,* "    321 ' .011 ,* 4 "  

Contextual Info: HVU132 Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI ADE-208-321 Z Rev. 0 Feb. 1995 Features • Low capacitance.(C = 0.5pFmax) • Low forward resistance. (rf = 2.0£2max) • Ultra small Resin Package (URP) is suitable for surface mount design.

Contextual Info: SKM 150GB173D Absolute Maximum Ratings Symbol Conditions IGBT *9 &* &*< =9 SKM 150GB173D 6 7 02 ;1 8* 7 .  &  7 .1 C  5C 6? 7 .21 8*  Typical Applications  +*        232 '    321 +* ,* "    321 ' .011 ,* 4 "  

Contextual Info: 35.0 Amp Y-LEAD BLOCK AUTO DIODES Data Sheet Mechanical Dimensions Description .406 10.3 .382(9.7) .202(5.14) .191(4.84) .341(8.65) .321(8.15) .548(13.91) .516(13.10) .406(10.3) .382(9.7) 1.016(25.81) .919(23.35) .449(11.41) .423(10.75) .284(7.21) .267(6.79)

HVU132

Abstract: Hitachi DSA00775
Contextual Info: ADE-208-321 Z HVU132 Silicon Epitaxial Planar Pin Diode for Antenna Switching Rev. 0 Feb. 1995 Features Outline • Low capacitance.(C=0.5pF max) • Low forward resistance. (rf=2.0Ω max) • Ultra small Resin Package (URP) is suitable for surface mount design.

Contextual Info: 25.0 Amp Y-LEAD BLOCK AUTO DIODES Data Sheet Mechanical Dimensions Description .406 10.3 .382(9.7) .202(5.14) .191(4.84) .341(8.65) .321(8.15) .548(13.91) .516(13.10) .406(10.3) .382(9.7) 1.016(25.81) .919(23.35) .449(11.41) .423(10.75) .284(7.21) .267(6.79)

Contextual Info: Data Sheet 50.0 Amp Y-LEAD BLOCK AUTO DIODES Mechanical Dimensions Description .406 10.3 .382(9.7) .202(5.14) .191(4.84) .341(8.65) .321(8.15) .406(10.3) .382(9.7) .548(13.91) .516(13.10) 1.016(25.81) .919(23.35) .284(7.21) .267(6.79) .449(11.41) .423(10.75)

Contextual Info: SHD126146 SHD126146P SHD126146N SHD126146D SENSITRON SEMICONDUCTOR USE DATA SHEET 321 TECHNICAL DATA DATA SHEET 839, REV. A HERMETIC POWER SCHOTTKY RECTIFIER Ultra Low Forward Voltage Drop 200 V, 15 A Applications: œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode

dn321

Abstract: LT6700 LT6700-1 LT6700-3 CMPZ5231B CMPZ5251B CR2032 LT6700-2 LT6700-X Signal Path Designer
Contextual Info: advertisement Dual Micropower Comparator with Integrated 400mV Reference Simplifies Monitor and Control Functions – Design Note 321 Jon Munson Introduction The LT 6700 dual comparator incorporates features to reduce part count in space-critical designs, including a

VCSEL array, 850nm

Abstract: 1550nm photodiode 1.6 Ghz 850nm apd 850nm VCSEL application HFE4081-321 multi mode vcsel VCSEL 980nm HFD3081-108 850 nm LED for fiber sensor APD Arrays
Contextual Info: DATA SHEET 1.25GBPS 850NM VCSEL TO-46 PACKAGE HFE408X-321 FEATURES: Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz Two different laser/ photodiode polarities Attenuating coating

INA321 application

Abstract: SBOS168 INa321
Contextual Info: INA 321 INA321 INA2321 www.ti.com microPower, Single-Supply, CMOS INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● LOW QUIESCENT CURRENT: 40µA/channel Shut Down: < 1µA ● HIGH GAIN ACCURACY: G = 5, 0.02%, 2ppm/°C ● GAIN SET WITH EXTERNAL RESISTORS

INA2321

Abstract: INA321 INA321E emg amp INA321 application
Contextual Info: INA 321 INA321 INA2321 www.ti.com microPower, Single-Supply, CMOS INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● LOW QUIESCENT CURRENT: 40µA/channel Shut Down: < 1µA ● HIGH GAIN ACCURACY: G = 5, 0.02%, 2ppm/°C ● GAIN SET WITH EXTERNAL RESISTORS

Contextual Info: DATA SHEET 1.25GBPS 850NM VCSEL TO-46 PACKAGE HFE408X-321 FEATURES: Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz Two different laser/ photodiode polarities Attenuating coating