31JAN2006 Search Results
31JAN2006 Datasheets Context Search
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Contextual Info: TLV3501 TLV3502 SBOS321D − MARCH 2005 − REVISED JULY 2005 4.5ns Rail-to-Rail, High-Speed Comparator in Microsize Packages FEATURES D D D D D D D DESCRIPTION HIGH SPEED: 4.5ns RAIL-TO-RAIL I/O SUPPLY VOLTAGE: +2.7V to +5.5V PUSH-PULL CMOS OUTPUT STAGE SHUTDOWN TLV3501 only |
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tlv3501tlv3502sbos321dot23-6+2 | |
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Contextual Info: TPS715xx Actual Size 2,15 mm x 2,3 mm www.ti.com SLVS338L – MAY 2001 – REVISED SEPTEMBER 2005 50 mA, 24 V, 3.2 µA Supply Current Low-Dropout Linear Regulator in SC70 Package FEATURES APPLICATIONS • • • • • • • • • • • • • 24-V Maximum Input Voltage |
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tps715xxslvs338l50-mamsp430+1 | |
ST19NA18
Abstract: stmicroelectronics eeprom AES-128 RSA 24
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st19na1810-year19na18/0702stmicroelectronics eeprom+2 | |
SaTCR-1
Abstract: SATCR1 SaTCR-2 diseqc 1.0 twin lnb 1A56H SaTCR-1 equivalent DiSEqC 1.0 / 1.1 AN2035 AN2036
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satcr-1satcr1satcr-2diseqc 1.0+6 | |
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Contextual Info: STEVAL-IFP002V1 High Side Driver - 8 Channel based on VN808 Data Brief Features p Application conforms to: IEC 61000-4-4 4kV , IEC 61000-4-5 (2kV), IEC 61000-4-6 (10kV) p 16 output channels up to 0.5A per channel p 16 digital inputs & 2 digital output p Decoupling power & microcontroller section by |
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steval-ifp002v1vn808 | |
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Contextual Info: M65KG512AB 512Mbit 4 Banks x 8M x 16 1.8V supply, DDR Low Power SDRAM Features • 512Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 8MWords, each 16 bits wide ■ Double Data Rate (DDR) – 2 Data Transfers/Clock cycle – Data Rate: 332Mbit/s max. for 6ns speed |
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m65kg512ab512mbit332mbit/s133mhz+1 | |
OPA134
Abstract: PCM1725 PCM1725D PCM1725DG4 PCM1725DR PCM1725U
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pcm172596khz256fs384fs+7 | |
SC70-6
Abstract: OMAP2420 OPA355 OPA358 OPA360 OPA361
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opa361sbos334aomap242xomap2420+4 | |
VISHAY BC 150
Abstract: HDU10 HBU15
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2011/65/eu2002/95/ec12-mar-12vishay bc 150+2 | |
M65KA512ABContextual Info: M65KA512AB 512Mbit 4 Banks x 8M x 16 , 133 MHz Clock Rate, Bare Die, 1.8 V Supply, Low Power SDRAM Features • 512 Mbit Synchronous Dynamic Ram – Organized as 4 Banks of 8 Mwords, each 16 bits wide ■ Supply voltage – VDD = 1.7 to 1.9 V (1.8 V typical in |
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m65ka512ab512mbit | |
spru301Contextual Info: TMS320C6727, TMS320C6726, TMS320C6722 Floating-Point Digital Signal Processors www.ti.com SPRS268C – MAY 2005 – REVISED NOVEMBER 2005 1 TMS320C6727, TMS320C6726, TMS320C6722 DSPs 1.1 • • • • • • Features C672x: 32-/64-Bit 300-MHz Floating-Point DSPs |
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tms320c6727tms320c6726tms320c6722sprs268c+3 | |
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Contextual Info: TPA3100D2 HTQFP QFN www.ti.com SLOS469C – OCTOBER 2005 – REVISED DECEMBER 2005 20-W STEREO CLASS-D AUDIO POWER AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • 20-W/ch into an 8-Ω Load From a 18-V Supply 10-W/ch into an 8-Ω Load From a 12-V Supply |
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tpa3100d2slos469c48-pin | |
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Contextual Info: M65KA512AB 512Mbit 4 Banks x 8M x 16 , 133MHz Clock Rate, Bare Die, 1.8V Supply, Low Power SDRAM Feature summary • 512Mbit Synchronous Dynamic Ram – Organized as 4 Banks of 8MWords, each 16 bits wide ■ Supply voltage – VDD = 1.7 to 1.9V (1.8V typical in |
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m65ka512ab512mbit133mhz | |
LMV821DCKR
Abstract: LMV821DCKT LMV822 LMV822D LMV824 LMV821 LMV821DBVR LMV821DBVT
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lmv821lmv822lmv824lmv821dckr+4 | |
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Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2007 RELEASED FOR PUBLICATION 6 5 4 3 2 2007 LOC AD ALL RIGHTS RESERVED. BY - 1 REVISIONS DIST 00 P LTR D DESCRIPTION DATE REVISED PER ECO-13-002771 DWN APVD KH 22FEB2013 RP 7 5 X Y FINISHED HOLE SIZE AND PLATED THRU HOLES |
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eco-13-00277122feb2013gr-1217-core31jan2006+1 | |
104 Ceramic Disc Capacitors
Abstract: HDU10
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11-mar-11104 ceramic disc capacitorshdu10 | |
TLC555
Abstract: TLC555MFKB TLC555MJG TLC555MJGB TLC555Q 5962-8950301 of monostable timer NE555 tlc555id
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tlc555slfs043fne555tlc555mfkb+6 | |
M65KG512ABContextual Info: M65KG512AB 512Mbit 4 banks x 8 Mb x 16 1.8 V supply, DDR low power SDRAM Features • 512Mbit Synchronous Dynamic RAM – Organized as 4 banks of 8 Mwords, each 16 bits wide ■ Double Data Rate (DDR) – 2 Data Transfers/Clock cycle – Data Rate: 332 Mbit/s max. for 6ns speed |
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m65kg512ab512mbit | |
SBOS313B
Abstract: LOG112 OPA132 OPA2381 OPA300 OPA335 OPA350 OPA354 OPA355 OPA380
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opa381opa2381sbos313b18mhz+10 | |
LMV931
Abstract: LMV931IDBVR LMV931IDBVT LMV931IDCKR LMV931IDCKT LMV932 LMV932IDGKR LMV934
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lmv931lmv932lmv934slos441g+8 | |
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Contextual Info: STD60NF55LA N-channel 55 V, 0.012 Ω, 60 A DPAK STripFET II Power MOSFET Features • Order code VDSS RDS on ID STD60NF55LA 55V <0.015Ω 60A Low threshold drive 3 1 Applications ■ Switching application ■ Automotive DPAK Description This Power MOSFET has been developed using |
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std60nf55la | |
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Contextual Info: ST7LNB1Y0 DiSEqC slave microcontroller for SaTCR based LNBs and switchers Features • Clock, reset and supply management – Reduced power consumption – Safe power on/off management by low voltage detector LVD – Internal 8 MHz oscillator ■ Communication interface |
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A115-A
Abstract: LMV341 LMV341IDBVR LMV342 LMV344
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lmv341lmv342lmv344000-v+6 | |
HDU10
Abstract: HCU1 HBU15
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2002/95/ec2011/65/eujs709a02-oct-12+3 | |