318 MARKING DIODE Search Results
318 MARKING DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| MG80C186-10/BZA |
|
80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
|
||
| ICM7555MTV/883 |
|
ICM7555MTV/883 - Dual marked (5962-8950303GA) |
|
||
| MQ80C186-10/BYA |
|
80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) |
|
||
| 54121/BCA |
|
54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) |
|
||
| 54AC20/SDA-R |
|
54AC20/SDA-R - Dual marked (M38510R75003SDA) |
|
318 MARKING DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: SIEMENS BSP 318 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • W = 1'2 - 2-0 V Type BSP 318 Vbs 60 V Type BSP 318 Ordering Code Q67000-S127 b 2.6 A ñ DS on) 0.15 Ci Package Marking SOT-223 BSP 318 |
OCR Scan |
Q67000-S127 OT-223 E6327 fi23SbQS a23SbQS fl235b05 | |
Q67000-S127
Abstract: BSP318 TRANSISTOR 318 E6327
|
Original |
OT-223 Q67000-S127 E6327 Sep-12-1996 Q67000-S127 BSP318 TRANSISTOR 318 E6327 | |
TRANSISTOR 318
Abstract: BSP 312 BSP318 MU diode MARKING CODE
|
OCR Scan |
OT-223 Q67000-S127 E6327 OT-223 TRANSISTOR 318 BSP 312 BSP318 MU diode MARKING CODE | |
BSP 318 SContextual Info: BSP 318 S Preliminary data SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • VGS th = 1.2 .2.0 V Pin 1 G Pin 2 D Pin 3 Pin 4 S D Type VDS ID RDS(on) Package Marking Ordering Code BSP 318 S 60 V |
Original |
OT-223 67000-S127 curren40 BSP 318 S | |
TRANSISTOR 318Contextual Info: BSP 318 S SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • VGS th = 1.2 .2.0 V Pin 1 G Pin 2 D Pin 3 Pin 4 S D Type VDS ID RDS(on) Package Marking Ordering Code BSP 318 S 60 V 2.6 A 0.15 Ω SOT-223 |
Original |
OT-223 67000-S127 repet40 TRANSISTOR 318 | |
s127 markingContextual Info: SIEMENS SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated Pin 1 G Pin 2 D Pin 3 Pin 4 D S Type Vbs b RDS on Package Marking Ordering Code BSP 318 S 60 V 2.6 A 0.15 Q SOT-223 BSP 318 S Q 67000-S127 Maximum Ratings |
OCR Scan |
OT-223 67000-S127 s127 marking | |
|
Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1G Featrues Pb-Free Package is Available. Ordering Information 3 Device Marking Shipping LBAV74LT1G JA 3000/Tape&Reel LBAV74LT3G JA 10000/Tape&Reel 1 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB |
Original |
LBAV74LT1G 3000/Tape LBAV74LT3G 10000/Tape 236AB) | |
|
Contextual Info: Switching Diode BAL99LT1 2 CATHODE 3 ANODE 3 MAXIMUM RATINGS Rating 1 Symbol Value Unit VR IF 70 100 Vdc mAdc Continuous Reverse Voltage Peak Forward Current 2 CASE 318–08, STYLE 18 SOT–23 TO–236AB DEVICE MARKING BAL99LT1 = JF THERMAL CHARACTERISTICS |
Original |
BAL99LT1 236AB) | |
DIODE g6
Abstract: LBAV74LT1
|
Original |
LBAV74LT1 236AB) DIODE g6 LBAV74LT1 | |
|
Contextual Info: LESHAN RADIO COMPANY, LTD. Switching Diode LBAL99LT1G Featrues We declare that the material of product compliance with RoHS requirements. 3 Ordering Information Device Marking 1 Shipping 2 LBAL99LT1G JF 3000/Tape&Reel LBAL99LT3G JF 10000/Tape&Reel CASE 318–08, STYLE 18 |
Original |
LBAL99LT1G 3000/Tape LBAL99LT3G 10000/Tape 236AB) OT-23 | |
|
Contextual Info: LESHAN RADIO COMPANY, LTD. Switching Diode LBAL99LT1G Featrues Pb-Free Package is Available. Ordering Information Device 3 Marking Shipping 1 LBAL99LT1G JF 3000/Tape&Reel LBAL99LT3G JF 10000/Tape&Reel 2 CASE 318–08, STYLE 18 SOT–23 TO–236AB MAXIMUM RATINGS |
Original |
LBAL99LT1G 3000/Tape LBAL99LT3G 10000/Tape 236AB) | |
Marking g51
Abstract: BAV70LT1
|
Original |
BAV70LT1 236AB) Marking g51 BAV70LT1 | |
BAL99LT1Contextual Info: LESHAN RADIO COMPANY, LTD. Switching Diode BAL99LT1 2 CATHODE 3 ANODE 3 MAXIMUM RATINGS Rating 1 Symbol Value Unit VR IF 70 100 Vdc mAdc Continuous Reverse Voltage Peak Forward Current 2 CASE 318–08, STYLE 18 SOT–23 TO–236AB DEVICE MARKING BAL99LT1 = JF |
Original |
BAL99LT1 236AB) BAL99LT1 | |
|
Contextual Info: Dual Series Switching Diode BAV99LT1 3 2 CATHODE 1 ANODE 3 CAHODE/ANODE 1 2 DEVICE MARKING CASE 318–08, STYLE 11 BAV99LT1 = A7 SOT–23 TO–236AB MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage |
Original |
BAV99LT1 236AB) | |
|
|
|||
BAV74LT1Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode BAV74LT1 3 1 ANODE 3 CATHODE 1 2 ANODE 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING BAV74LT1 = JA MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Symbol VR IF Value |
Original |
BAV74LT1 236AB) BAV74LT1 | |
DIODE G7
Abstract: BAV99LT1 G7 diode
|
Original |
BAV99LT1 236AB) DIODE G7 BAV99LT1 G7 diode | |
|
Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode BAV99LT1 3 2 CATHODE 1 ANODE 3 CAHODE/ANODE 1 2 DEVICE MARKING CASE 318–08, STYLE 11 BAV99LT1 = A7 SOT–23 TO–236AB MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current |
Original |
BAV99LT1 236AB) | |
|
Contextual Info: LESHAN RADIO COMPANY, LTD. Low Noise Transistor NPN Silicon LMBT2484LT1G z Pb-Free Package is Available. Ordering Information Device Marking 3 Shipping LMBT2484LT1G 1U 3000/Tape&Reel LMBT2484LT3G 1U 10000/Tape&Reel 1 2 CASE 318–08, STYLE 6 MAXIMUM RATINGS |
Original |
LMBT2484LT1G 3000/Tape LMBT2484LT3G 10000/Tape 236AB) | |
|
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon z Pb-Free Package is Available. LMBTA70LT1G Ordering Information Device Marking Shipping 3 LMBTA70LT1G M2C 3000/Tape&Reel LMBTA70LT3G M2C 10000/Tape&Reel 1 2 MAXIMUM RATINGS CASE 318–08, STYLE 6 |
Original |
LMBTA70LT1G 3000/Tape LMBTA70LT3G 10000/Tape 236AB) | |
|
Contextual Info: LESHAN RADIO COMPANY, LTD. VHF / UFH Transistor NPN Silicon LMBT918LT1G z Pb-Free Package is Available. Ordering Information Device Marking Shipping LMBT918LT1G M3B 3000/Tape&Reel LMBT918LT3G M3B 10000/Tape&Reel 3 1 2 CASE 318–08, STYLE 6 MAXIMUM RATINGS |
Original |
LMBT918LT1G 3000/Tape LMBT918LT3G 10000/Tape 236AB) | |
kl3 diode
Abstract: transistor KL3 BAT54RCLT1
|
Original |
BAT54RCLT1 236AB) 200MAX 120MAX kl3 diode transistor KL3 BAT54RCLT1 | |
|
Contextual Info: Monolithic Dual Switching Diode Common Cathode BAV70LT1 3 1 ANODE 3 CATHODE 1 2 2 ANODE CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING BAV70LT1 = A4 MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value 70 200 Unit Vdc mAdc FM(surge) 500 mAdc Symbol |
Original |
BAV70LT1 236AB) | |
|
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Amplifier NPN Silicon LMBTA20LT1G z Pb-Free Package is Available. Ordering Information Device 3 Marking Shipping LMBTA20LT1G 1C 3000/Tape&Reel LMBTA20LT1G 1C 10000/Tape&Reel 1 2 CASE 318–08, STYLE 6 SOT–23 TO–236AB |
Original |
LMBTA20LT1G 3000/Tape 10000/Tape 236AB) | |
|
Contextual Info: Switching Diode 3 CATHODE BAS16LT1 1 ANODE MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current 3 Symbol Value Unit VR IF 75 200 500 Vdc mAdc mAdc I FM surge 1 2 CASE 318–08, STYLE 8 SOT–23 (TO–236AB) DEVICE MARKING |
Original |
BAS16LT1 236AB) | |