3155 POWER TRANSISTOR Search Results

TOROIDS transformer

Abstract: GP 841 Diode
Contextual Info: AN ALO G D E V IC E S 5-Bit Programmable Triple Power Supply Controller for Pentium III Processors ADP3155 FEATURES Active V oltage Positioning w ith Gain and Offset A djustm ent O ptim al Com pensation for Superior Load Transient Response VRM 8.2, VRM 8.3 and VRM 8.4 Com pliant

3155 power transistor

Contextual Info: PNP SILICON PLANAR LOW NOISE TRANSISTOR ZTX214C ISSUE 2 - MARCH 94 FEATURES * Low noise * High gain APPLICATIONS * Audio circuits * Instrumentation E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L Collector-Base Voltage VALUE UNIT V CBO

3155 power transistor

Abstract: ZTX214C equivalent ZTX214C DSA003764
Contextual Info: PNP SILICON PLANAR LOW NOISE TRANSISTOR ZTX214C ISSUE 2 – MARCH 94 FEATURES * Low noise * High gain APPLICATIONS * Audio circuits * Instrumentation C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO

Contextual Info: PNP SILICON PLANAR LOW NOISE TRANSISTOR ZTX214C ISSUE 2 - MARCH 94_ FEATURES * Low noise * High gain APPLICATIONS * Audio circuits * Instrumentation E-Line T092 Compatible - ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage

A 3131

Abstract: CA3110 ca3109 CA3150 4-input nand gates ttl 4-input or gates ttl ca3104 CA3105 CA3125
Contextual Info: fl MOTOROLA INTEGRATED CIRCUITS 3100 Series 3000 Series TTL III integrated circuits com­ prise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed 30-50 MHz clock rate , good external noise

c 3725 transistor

Abstract: 2N3725 3725 transistor 3725
Contextual Info: 2N 3725 SILICON PLANAR NPN HIG H -VO LTAG E, H IG H -CU R REN T SWITCH The 2N 3725 is a silicon planar epitaxial transistor in T O -3 9 metal case. It is a high-voltage, high-current switch used for memory applications requiring breakdown voltages up to 50V

ZTX214C

Abstract: T092 ZTX300
Contextual Info: NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ISSU E 2 - MARCH 94_ FEATURES * 15 Volt V,CEO fT=500 M H z ABSOLUTE M A X IM U M RATINGS. SY M B O L PARAMETER Coliector-Base Voltage VALUE V CBO 40 Collector-Emitter Voltage

Contextual Info: MOTOROLA INTEGRATED CIRCUITS 3100 Series 3000 Series TTL III integrated circuits com ­ prise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed 30-50 MHz clock rate , good external noise

Contextual Info: LA NS DA LE SEMICONDUCTOR 35E D • SBfiflDB 0 0 0 0 3 5 ^ 2 ■ LTE MAXIMUM RATINGS T -4 3 -0 1 Rating Supply Operating Voltage Range - Vco TTL III MOTOROLA INTEGRATED CIRCUITS 3100 Series 3000 Series TTL III integrated circuits com­ prise a family of transistor-transistor

1RFD120

Abstract: 6ati T3B diode 2s4 4pin XSTR IRFD212
Contextual Info: MOTOROLA SC IM E L> I X S T R S /R F b 3 b ?2 S 4 Q G Ô IT E l 4 | MOTOROLA • I SEM ICO NDUCTOR I TECHNICAL DATA IR FD 210 IRFD211 IR FD 212 IR FD 213 Advance Information Sm all-Sign al T M O S Field Effect Transistors N -C h ann el Enh an cem en t-M ode

Contextual Info: Q D 1 7b S f i MITSUBISHI RF POWER TRANSISTOR TIS 2SC3022 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dim e n sio n s in mm

2N6122 transistor

Abstract: 2N6121 2n6123 2N6I24 2N6124 2N61 2N6122 2N6126
Contextual Info: MOTOROLA SC X S T R S /R 1 SE F b3b7254 I QQ ÔM Si'l I fl t lB U N rn MOTOROLA 2N6121, 2N61*2 2N6123 SEMICONDUCTOR TECHNICAL DATA PNP 2N6124, 2N6125 COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS 4 AM PERE . . . designed for use in power amplifier and switching circuits, —

irfd211

Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA IR FD 210 IRFD211 IRFD212 IRFD213 Advance Information S m all-S ig n al T M O S Field E ffe c t Transistors N-Channel Enhancem ent-M ode Silicon G ate TM O S 4-Pin DIP 1 WATT TM O S FETs rDS on = 1.5 O HM 200 VOLTS T h e s e T M O S F E T s a r e d e s ig n e d f o r lo w v o lt a g e , h ig h

transistor equivalent table

Abstract: 3155 power transistor P6042 transistor crossover
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6836 D esigner’s Data Sheet Switchmode Series Ultra-Fast NPN Silicon Power Transistors These transistors are designed for high-voltage, high-speed, power switching in inductive circuits w here fall tim e is critica l. They are p a rticu la rly suited for

Contextual Info: TN6726A / NZT6726 TN6726A NZT6726 C C B TO-226 B SOT-223 E C E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 77. Absolute Maximum Ratings*

IRF612

Abstract: IRF613 IRF611 IRF610 IRFB10 power MOSFET IRF610 IRF 513#
Contextual Info: Standard Power MOSFETs- IRF610, IRF611, IRF612, IRF613 File Number 1576 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 2.0A and 2.5A, 150V-200V

Contextual Info: ÂV A N T E K Q INC a v a 44E D n t e El 1141%!= 0DQÔ07S T BIAVA U T O /U T C 1511 S eries T h in -F ilm C a s c a d a b ie A m p lifie r 5 to 1500 M H z k FEATURES APPLICATIONS • Frequency Range: 5 to 1500 MHz • Noise Figure: 3 .5 d B T y p • Low Power Consumption

D-90491

Abstract: PJ 1179
Contextual Info: SALES OFFICES EUROPE AMERICAS DENMARK ITALY BRAZIL 2730 HERLEV Herlev Torv, 4 Tel. 45-44 94.85.33 Telefax: (45-44) 948694 20090 ASSAGO (MI) V.le Milanofiori - Strada 4 - Palazzo A'4/A Tel. (39-2) 57546.1 <10 linee) Telefax: (39-2) 8250449 05413 SÀO PAULO

BF 6591

Abstract: transistor on 4409 2SC5617 NE685 NE685M13 NE685M13-T3-A S21E NEC JAPAN 7915 nec 7915 6004 0215
Contextual Info: NEC's NPN SILICON TRANSISTOR NE685M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 0.35 LOW NOISE FIGURE: NF = 1.5 dB at 2 GHz 0.35 • 1.0+0.1 ñ0.05 HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz

transistor D 4515

Abstract: PJ 1179 D 4515 ST2000 4463 SL71Y STE2001 701023 Pj 1189 1 928 403 226
Contextual Info: Solutions for Sales Offices 69050-002 Manaus/AM Costantino Nery Street, 2789 80 Stair - 806 Room Chapada Tel. +55 92 657 0017 Fax +55 92 657 0157 COLORADO Longmont Tel. +303 772 9729 Fax +303 381 3680 CONNECTICUT Woodstock Tel. +860 928 7700 Fax +860 928 2722

Discriminator sot-23-5

Abstract: T893
Contextual Info: Semiconductor, Inc. TC44 Series VOLTAGE DETECTOR FEATURES GENERAL DESCRIPTION • ■ The TC44 Series are CMOS voltage detectors, suited especially for battery-powered applications because of their extremely low 1 pA operating current and small surfacemount packaging. Each part is laser trimmed to the desired

LM339

Contextual Info: National LP339 & Semiconductor LP339 Ultra-Low Power Quad Comparator General Description The LP339 consists of lour independent voltage compara­ tors designed specifically to operate from a single power supply and draw typically 60 /j.A of power supply drain cur­

2H2222

Abstract: 2H222 LM339 1S47b schematic diagram 50 VDC POWER SUPPLY VOLTAGE LEVEL RELAY SM 125 220 156 power supply schematic diagram transistor 79t AN-450 LP339M
Contextual Info: LP339 National Semiconductor LP339 Ultra-Low Power Quad Comparator General Description The LP339 consists of four independent voltage compara­ tors designed specifically to operate from a single power supply and draw typically 60 ¡iA of power supply drain cur­

MFE9200

Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Contextual Info: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­