3155 DIODE Search Results

Contextual Info: 19-3155; Rev 0; 5/04 Step-Down Controllers with Prebias Startup, Lossless Sensing, Synchronization, and OVP Features The MAX8543/MAX8544 current-mode, constant-frequency PWM buck controllers operate from a 3V to 13.2V input supply and generate adjustable 0.8V to 0.9

C1608X7R1H104KT

Abstract: k 2645 MOSFET C5315 IRF 244 MOSFET power MOSFET IRF data
Contextual Info: 19-3155; Rev 0; 5/04 KIT ATION EVALU E L B A IL AVA Step-Down Controllers with Prebias Startup, Lossless Sensing, Synchronization, and OVP The MAX8543/MAX8544 current-mode, constant-frequency PWM buck controllers operate from a 3V to 13.2V input supply and generate adjustable 0.8V to 0.9

IRF 540 with gain 16.5

Abstract: MOSFET IRF 540 AS A SWITCH 33a sot23 diode IRf 48 MOSFET
Contextual Info: 19-3155; Rev 0; 5/04 KIT ATION EVALU E L B A IL AVA Step-Down Controllers with Prebias Startup, Lossless Sensing, Synchronization, and OVP The MAX8543/MAX8544 current-mode, constant-frequency PWM buck controllers operate from a 3V to 13.2V input supply and generate adjustable 0.8V to 0.9

Contextual Info: rz 7 SGS-THOMSON ^ 7 # [M û[M iajO T ô*S 1N 3 1 5 4 , 1 N 3157,A TEMPERATURE COMPENSATED ZENER DIODES • SEMICONDUCTOR MATERIAL : SILICON ■ TECHNO LO G Y : LOCAL EPITAXY + GUARD RING s - " ' DO 35 (Glass) A B S O L U T E R A TIN G S (limiting values)

IN3155

Abstract: IN3157 BL-5B IN3154 1n3156 1N3154 015G 12123 N3157 3155
Contextual Info: SbE ]> • 7 ^ 2 3 7 0041532 «S6TH s 6 S-TH4MS0N SCS-THOMSON !QJOT@«S 171 T- , h ° ^ 1N 3154,A-> 1N 3157,A TEMPERATURE COMPENSATED ZENER DIODES ■ SEMICONDUCTOR MATERIAL : SILICON . TECHNOLOGY : LOCAL EPITAXY + GUARD RING ABSOLUTE RATINGS limiting values

ZT10

Abstract: CI 4583 CI 4584 1N4681 1N4682 4776a
Contextual Info: D O 35 CB 102 Voltage reference diodes ( tem perature compensated ) DO 35 IZ T 4 m A V z t 6,4 V Ptot 9-4 W ( T amt> 50 ° C ) D iodes de référence de tension ( compensées en tem pérature ) D O 3 5 DRS 75 VZT* rZT* 'ZT Test temperatures avz (V> (S2)

TOROIDS transformer

Abstract: GP 841 Diode
Contextual Info: AN ALO G D E V IC E S 5-Bit Programmable Triple Power Supply Controller for Pentium III Processors ADP3155 FEATURES Active V oltage Positioning w ith Gain and Offset A djustm ent O ptim al Com pensation for Superior Load Transient Response VRM 8.2, VRM 8.3 and VRM 8.4 Com pliant

in823a

Abstract: IN943B 1N941 3155a 1N942A IN821
Contextual Info: DIODES ZENER COMPENSÉES EN TEMPÉRATURE i * temperature compensateci zener diodes TY P ES * V ZT V >ZM (mA) min 'ZT nom max A V max. @ IZT pour A t (mV) rZT max. (mA) (£2) at At (10-5 rc) <°c> Boîtier Case autres tensions ou autres boîtiers, nous consulter. Please consult us for others voltages or others esses.

HVM10

Abstract: diode HVM12 HVM15 HVM12 HVM14 HVM16 HVP10 HVP12 HVP14 HVP16
Contextual Info: LESHAN RADIO COMPANY, LTD. HVM5 – HVM16 HVP5 – HVP16 HIGH – VOLTAGE DIODES MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase,half wave, 60Hz,resistive or inductive load. For capacitive load,derate current by 20%.

ana 650

Abstract: ana 650, SM 7525 1N4989 1N5388 20688 ed 8554
Contextual Info: Zener Regulator Diodes Micmsemj A Part Number i Microsemi Division ZEN 1N5387A 1N5387B SMBG5387B SMBJ5387B UZ4120 UZ5120 UZ5220 1N5388 1N5388A 1N5388B SMBG5388B SMBJ5388B 1N4989 JAN1N4989 JANS1N4989 JANTX1N4989 JANTXV1N4989 1N4989US JAN1N4989US JANS1N4989US

in3155

Abstract: zener diode - C 10 ST 1N3154 1N3157A diode zener 718 1N3154A 1N3155 1N3156 1N3156A 1N3157
Contextual Info: 1775470 C O D I SEMICONDUCTOR I| TO INC 90D 0 0 5 5 7 D eT | 1775470 0Q00SS7 t, D • CODI Sem iconductor, Inc. 8.4 VOLT NOMINAL ZENER VOLTAGE 1N3154 TEMPERATURE COMPENSATED ZENER REFERENCE DIODES thru 1N3157A «MAXIMUM RATINGS O p e ra tin g T e m p e ra tu re :

1N407E

Contextual Info: Zero-TC Reference Diodes Micmsemj I Part N um ber OTC M icrosem i ; P ackage i O u tlin e Division \ Type ; Mil Spec Pow er Data S h e e t ID W Vz (V) Izt <mA) «V z (%/C) Z zt (n ) IR i V R ! Toi. (uA ) ! 0 0 ;(+/-%) 1N4069 Scottsdale DD STD 2323 2 51 7 5

MBR20030CTL

Abstract: MBR20025CTL R20025C
Contextual Info: MOTOROLA SC DIODES/OPTO b3fci72SS □0flb3Lci DSb b4E D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR20015CTL MBR20020CTL MBR20025CTL MBR20030CTL POWERTAP SWITCHMODE Power R ectifiers . . using the S chottky B arrier prin ciple w ith a platin um barrier metal. These stateof-the-art devices have the fo llo w in g features:

Contextual Info: AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS F5G1 The F5G1 is an 880nm LED encapsulated in a clear, wide angle, sidelooker package. — D— * ï E f — I bi 1- 1 - 1 j-1 Green H? Color '¿b-— Code SECTION x -x LEAD PROFILE a I •* T i «•

Contextual Info: 1N3154&A thru 1N3157 & A Mierdsemi Corp. ' Tfte diode experts SANTA A N A , CA SC O TTSD A LE, A Z For more inform ation call: 602 941-6300 FEATURES 8.4 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • ZENER VOLTAGE 8.4V ± 5 % (Sea Note Ij • 1N3154 THRU 1N3157 HAVE JAN. JANTX, JANTXV. AND -1 QUALIFICATIONS

Contextual Info: 1N3154 thru 1N3157, A, -1, e3 8.4 Volt Temperature Compensated Zener Reference Diodes SCOTTSDALE DIVISION APPEARAN CE The popular 1N3154 thru 1N3157A series of Zero-TC Reference Diodes provides a selection of 8.4 V nominal voltages and temperature coefficients to

1N3154

Abstract: 1N3157A JANTX1N3157-1 1N3157 RH3156 RH3157 RH3157A JANTX1N
Contextual Info: 1N3154 thru 1N3157, A, -1, e3 8.4 Volt Temperature Compensated Zener Reference Diodes SCOTTSDALE DIVISION APPEARANCE The popular 1N3154 thru 1N3157A series of Zero-TC Reference Diodes provides a selection of 8.4 V nominal voltages and temperature coefficients to

Contextual Info: 1N 3154& A thru 1N3157 & A M ierosemi Corp. y The diode experts SCOTTSDALE, A Z SANTA ANA, CA For more inform ation call: 602 941-6300 FEATURES 8.4 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • ZENER VOLTAGE 8.4V + 5% (See Note 1) • 1N3154 THRU 1N3157 HAVE JA N . JA N T X , JA N T X V . AND -1 Q UALIFICATIONS

powerex nd41

Contextual Info: ND413425 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Description: OUTLINE DRAWING Powerex Dual Diode Modules are designed for use in applications requiring rectification and isolated packaging. The modules are isolated

2N3743

Contextual Info: I S ym bol Value U nit Collector-Emitter Voltage VCEO 300 Vdc Collactor-Base Voltage V cB O 300 Vdc Emitter-Base Voltage Vebo 6.0 Vdc Collector Current — Continuous lc 50 m Adc Total Device Dissipation @ Ta = 2&eC Derate above 25°C Pd 1.0 5.7 Watts mW/°C

BYV133

Contextual Info: —- N AMER PHILIPS/DISCRETE - 25E D • - - -— I'I bt.S3T31 D O a S h T 1! 3 ■ ,I BYV133 SERIES T - O Z - ft SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage, platinum-barrier rectifier diodes in plastic envelopes, featuring low forward voltage drop,

sowa

Abstract: VP0535 VP0535N3 VP0535ND VP0540 VP0540ND Teledyne Semiconductor VM320
Contextual Info: TELEDYNE COMPONENTS 2flE D GGUbMäS - •=! T -2 9 -2 5 VP0535, VP0540 SEM ICO N D U CTO R P-CHANNEL ENHANCEMENT-MODE D-MOS FETs ORDERING INFORMATION VP0535ND VP0535N3 -350V, 75ÌÌ Sorted Chips in Waffle Pack T0-92 Plastic Package Description

NTE519

Contextual Info: DISCRETE LED INDICATORS NTE Type No. Description and Application 3130 ind Dlag. N? . Oty Per Bag Pkg Size Blinking LED, Pulse rate 3Hz 383 1 3131 Blinking LED, Pulse rate 3Hz 383 3160 Rectangular LED 's designed for Level m eter displays, Bar graph displays, Instrum enta­

Contextual Info: Q D 1 7b S f i MITSUBISHI RF POWER TRANSISTOR TIS 2SC3022 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dim e n sio n s in mm