315 DIODE Search Results

Contextual Info: BSP 315 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS th = -0.8.-2.0 V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 315 -50 V -1.1 A 0.8 Ω SOT-223 BSP 315 Type BSP 315 BSP 315 Ordering Code

mag12

Contextual Info: DATA SHEET • PS214-315 DIODE DATA SHEET PS214-315: 1700 – 2800 MHz Voltage-Controlled Phase Shifter Applications • High power amplifier linearization VCONTROL IN/OUT 10 pF  Point-to-point radio  Radar systems Control Voltage  RF signal cancellation

EL-315

Contextual Info: Infrared Emitting Diodes GaAs KODENSHI EL-315 DIMENSIONS (Unit : mm) The EL-315 a high-power GaAs IRED mounted in a clear sidelooking package, is compact, low profile, and easy to mount. FEATURES •Compact •Low profile package •Low-cost •Sidelooking plastic package

2SD 106 AI-17

Abstract: scale driver 2SD 315 AI-25 IGD 515 ei 2SD 106 AI igd 515 IGD-1-DT2-515 2SD 315 AI-25 diode 50000v 2SD 315 AI-33 FZ1200R33KF2
Contextual Info: IGBT Drivers Type No. of Channels 2SD 106 AI 2SD 106 AI-17 6SD 106 EI 6SD 106 EI-17 2SD 315 AI 2SD 315 AI-25 2SD 315 AI-33 1SD 418 FI-FZ2400R17KF6-B2 1SD 418 FI-FZ800R33KF2 1SD 418 FI-FZ1200R33KF2 2 2 6 6 2 2 2 1 1 1 Gate Voltage V +/- 15 +/- 15 +/- 15 +/- 15

colour code diode

Abstract: diode colour code 315-512-04 LED panel design Specification
Contextual Info: FEATURES PANEL INDICATOR LEDs - Ø6.35mm Mounting 315 SERIES Low profile lens styling PACK QUANTITY = 20 PIECES Flying lead terminations and low current versions available Sealed to IP40 Supplied complete with mounting hardware Product illustrated 315-532-21

DE1a-5V

Abstract: DE2a-12V DE1a1b-L-5V DE1a1b-L2-6V VDE0631 DE1a-L2-3V DE1a-12V DE1a1b-24V DE1a1b-5V DE1a1b-L-24V
Contextual Info: DE VDE COMPACT HIGH-INSULATION POLARIZED POWER RELAY DE RELAYS FEATURES 25.0 .984 • Conforms to VDE0631. Insulating distance between coil and contacts: Clearance Min. 8mm .315 inch Creepage distance Min. 8mm .315 inch 12.5 .492 12.5 .492 • Extensive product line-up.

DE1a-L2-12V

Abstract: DE1a1b-L-3V DE2a-L2-5V DE2a-L2-12V
Contextual Info: DE ADE VDE DE RELAYS (ADE) COMPACT HIGH-INSULATION POLARIZED POWER RELAY FEATURES 25.0 .984 12.5 .492 • Conforms to VDE0631. Insulating distance between coil and contacts: Clearance Min. 8mm .315 inch Creepage distance Min. 8mm .315 inch • Extensive product line-up.

SW11

Abstract: PS1102
Contextual Info: MDEV-315-HH-KF#-MS MDEV-418-HH-KF#-MS MDEV-433-HH-KF#-MS WIRELESS MADE SIMPLE MS KEYFOB MASTER DEVELOPMENT SYSTEM USER’S GUIDE ORDERING INFORMATION PART # DESCRIPTION MDEV-*-HH-KF#-MS MS Keyfob Master Development System * = 315, 418 Standard , 433MHz

semikron skkd 131

Contextual Info: se MIKRDN SEMIPACK 3 Rectifier Diode Modules Ifrms maximum values for continuous operation 315 A I 410 A | 315 A I 410A V rsm V rrm 200 A Ifav (sin. 180; T case = 80 °C) 260 A 200 A SKKD 201 SKKE 201 SKKD 260 SKKE 260 SKMD 2601) 260 A V V 900 800 SKKD 201/08

ird 201

Abstract: C260A Diode semikron skke semikron skkD SKKD SkkE 1200 semikron skkd 600 semikron skke 260
Contextual Info: VRSM VRRM IFRMS maximum values for continuous operation 315 A 410 A 315 A 410 A IFAV (sin. 180; Tcase = 80 °C) 260 A 200 A V V 200 A 260 A 900 800 SKKD 201/08 SKKD 260/08 SKKE 201/08 SEMIPACK 3 Rectifier Diode Modules SKKD 201 SKKE 201 SKKD 260 SKKE 260

Contextual Info: DATA SHEET PS088-315: 700-1100 MHz Voltage Controlled Phase Shifter Applications • Amplifier linearization • I/Q modulators/demodulators • Vector modulators Features • Wide operating range: 700 to 1100 MHz • Phase shift range: 85 to 105 degrees Figure 1. PS088-315 Block Diagram

IR led transmitter 9v

Abstract: SW11 PS1102
Contextual Info: MDEV-315-HH-CP8-MS MDEV-418-HH-CP8-MS MDEV-433-HH-CP8-MS WIRELESS MADE SIMPLE MS COMPACT HANDHELD TRANSMITTER MASTER DEVELOPMENT SYSTEM USER’S GUIDE ORDERING INFORMATION PART # DESCRIPTION MDEV-*-HH-CP8-MS MS Compact Transmitter Development System * = 315, 418 Standard , 433MHz

Anaren Microwave

Abstract: anaren modulator 55A0016 reactance modulator M1841-49 anaren mixer
Contextual Info: A Anaren Microwave, Inc. 6635 Kirkville Road East Syracuse, NY 13057, U.S.A. Tel: 315 432-8909 Toll Free: (800) 544-2414 Fax: (315) 432-9121 Pub. M1841-49 Surface Mount Quad IF Mixer/ IQ Modulator Model 55A0016 Data Sheet Anaren Microwave, Inc. has developed a new surface mount quadrature

dale rs-2b

Abstract: PBV-R010 rn55d1001f sprague 53D RN55D1002F Mallory Start Capacitors mosfet H bridge POWER SUPPLY USING PWM HALF BRIDGE CONTROLLER half bridge pwm controller 200V input voltage mosfet bridge
Contextual Info: M.S. KENNEDY CORPORATION 4707 DEY ROAD LIVERPOOL, NY 13088 PHONE: 315 701-6751 | FAX: (315) 701-6752 MSK Web Site: http://www.mskennedy.com/ MSK4225 Closed Loop Controller By Dan Williams, MS Kennedy Corp.; 09/2007 The MSK4225 is a MOSFET H bridge with internal gate drive and a PWM

Contextual Info: DATA SHEET • SKY12145-315 DATA SHEET SKY12145-315: HIP3 Variable Attenuator for UMTS Base Stations C1 C2 Vcontrol GND Pin Out Bottom View 23 dB attenuation range ● 1.5 dB insertion loss, 1.5:1 SWR ● 0–12 V control voltage ● 43 dBm IP3 ● Small footprint LGA package

free home theater 7.1 pcb circuit diagram

Contextual Info: TM TAS5261 www.ti.com SLES188 – AUGUST 2006 315-W Mono BTL Digital Amplifier Power Stage FEATURES • • • • • • • • Total Output Power – 125 W Into 8 Ω at <0.09% THD+N – 220 W Into 6 Ω at 10% THD+N – 315 W Into 4 Ω at 10% THD+N

Contextual Info: TM TAS5261 www.ti.com SLES188 – AUGUST 2006 315-W Mono BTL Digital Amplifier Power Stage FEATURES • • • • • • • • Total Output Power – 125 W Into 8 Ω at <0.09% THD+N – 220 W Into 6 Ω at 10% THD+N – 315 W Into 4 Ω at 10% THD+N

free home theater 7.1 pcb circuit diagram

Abstract: SLES188 TAS5261 TAS5261DKD TAS5518 P6SMB
Contextual Info: TM TAS5261 www.ti.com SLES188 – AUGUST 2006 315-W Mono BTL Digital Amplifier Power Stage FEATURES • • • • • • • • Total Output Power – 125 W Into 8 Ω at <0.09% THD+N – 220 W Into 6 Ω at 10% THD+N – 315 W Into 4 Ω at 10% THD+N

free home theater 7.1 pcb circuit diagram

Abstract: TAS5261 TAS5261DKD TAS5518 600w audio amplifier circuit diagram AES17
Contextual Info: TM TAS5261 www.ti.com SLES188 – AUGUST 2006 315-W Mono BTL Digital Amplifier Power Stage FEATURES • • • • • • • • Total Output Power – 125 W Into 8 Ω at <0.09% THD+N – 220 W Into 6 Ω at 10% THD+N – 315 W Into 4 Ω at 10% THD+N

650nm 5mw laser module

Abstract: 650NM laser diode 5mw QL65D6SA QSI 650 QL65
Contextual Info: QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65D6SA Signature of Approval Approvaed by Checked by Issued by Approval by Customer 315-9, Chunheung-ri, Sungger-eup, Chunan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65D6SA InGaAlP Laser Diode

Contextual Info: SHD126146 SHD126146P SHD126146N SHD126146D SENSITRON SEMICONDUCTOR USE DATA SHEET 321 TECHNICAL DATA DATA SHEET 315, REV. - SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200•C Operating Temperature Applications: œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode

4804

Abstract: C 4804 4804 B MOSFET Module 24v 200A MSK4804
Contextual Info: MIL-PRF-38534 CERTIFIED 1200V/100A SiC HALF BRIDGE M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 PEM FEATURES: 4804 315 701-6751 Half Bridge Configuration Silicon Carbide Mosfet Provides Ultra Fast Switching Silicon Carbide Diode Provides Near Zero Recovery

Contextual Info: SHD126146 SHD126146P SHD126146N SHD126146D SENSITRON SEMICONDUCTOR USE DATA SHEET 321 TECHNICAL DATA DATA SHEET 315, REV. - SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200•C Operating Temperature Applications: œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode

inverter grade SCR

Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 600V/300A SCR/DIODE PEM 4707 Dey Road Liverpool, N.Y. 13088 4891 315 701-6751 FEATURES: SCR/DIODE Topology 600V Rated Voltage 300A Continuous Current Proprietary Encapsulation Provides Near Hermetic Performance MIL-PRF-38534 Screening Available (Modified)