310A0 Search Results

PEAK tray drawing

Abstract: BG0808
Contextual Info: REC YC LE WITH SEM ICYCLE cT I 310A0iraS HUM 313A03d I PART NUMBER LO rO CN cn r-» CN "C H A M FER INDICATES P A C K A G E PIN#1 O R I E N T A T I O N ^t" LO CO 1. M A T E R I A L - P P 6 . 2. A L L D I M E N S I O N S A R E IN MILLIM E T E R S , 3. T O L E R A N C E S - X. X = + 0 . 2 5

PEAK tray drawing

Abstract: BG3131
Contextual Info: R E C Y C L E W ITH S E M IC Y C L E I 310A0IH3S HUM 31DAD3d I 5 5 .9 9 2 . J 3 , 0 X 4 5 _ CHAMFER INDICATES P AC KAG E P IN #1 ORIENTATION R 1 .6 SEE SEE B O TTO M VIEW A D DE' M ATERIAL - PP8. ALL DIMPNSIONS ARP IN MIPPIMPTPRS. := + 0 .25 :X= + 0.13 PPCI PI PD.

CSA04

Contextual Info: -pi RECYCLE WITH SEMICYCLE I 313A0IN3S HIM 310A03y I PART NUMBER m ro CJD CNJ " C H A M F E R IHD ICATES P A C K A G E P I N #1 ORIEHTATIOH SEE DETAIL C NOTES : 1, M A T E R IA L - R R 8 . 2, ALL DIMENSIONS ARE IN MILLA 1ETER Í 3, TO L E R A N C E S - X „X = + 0 , 2 5

420A0002

Abstract: ic L 816a y 825A0001
Contextual Info: AC-AC WALL PLUG-IN TRANSFORMERS 120 VAC, 60 Hz. AND 220VAC, 50Hi. UL <f| File No. E82180 L File No. LR38236 1 File No. 7969-3330. 7969-3331 MICROTRAIM FEATURES • UL Class II Xfmrs-UL 1310. • UL 544 Medical Capability • Thermal Overload Protection. • lOO'/r Testing

825A00

Abstract: FL100 E8218 818A0001 825A0 830A0060-03
Contextual Info: TAMURA WALL PLUG-IN and S C RE W TERMINAL AC*A* •RÜ •20VAC. 60Hz ana 220VAC. 50Hz. file nos.7969-3330 file nos. LR38236 file nos. E82180 7969-3331 FEATURL.: • UL Class II X fm rs- U L 1310. 100% Testing. Temp Range: 0 to +40'C. Material: Black ABS resin/UL 94-V0.

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT MP D 4 2 1 6 4 0 5 16M-BIT DYNAMIC RAM 4M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The fiPD4216405 is a 4 194 304 words by 4 bits dynamic CMOS RAM with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.

I486DX2

Abstract: 62406 i486DX2 66 MCM62486A-11
Contextual Info: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA 32K x 9 Bit BurstRAM Synchronous Static RAM MCM62486A With Burst Counter and Self-Timed Write The M C M 62 4 8 6A is a 294,912 b it synchronous static random access m em ory desig n ed to provide a burstable, h ig h -p erform a n ce, secondary cache

STA 518A

Contextual Info: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA Product Preview MCM67B518A 32K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write T h e M C M 67B 518A is a 589,824 bit synchronous fa st static random a ccess m e m ory designed to provide a burstable, h ig h -p erform a n ce, secondary cache

MCM67N618AFN5

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67N618A Product Preview 64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Registered Outputs The MCM67N618A is a 1,179,648 bit synchronous static random access memory designed to provide a burstable, high-performance, secondary cache

Contextual Info: 24°' CMOS 16-Channel Precision Timer/Driver Features: • Provides 17precision-timed output pulses ■ Variable output pulse width as a function o f an external timer clock frequency ■ High source current drive output pulses- up to 15 mA using bipolar drivers

HC3208

Abstract: H3208 HB3208 HI3208
Contextual Info: H3208 1024 x 8 CMOS EEPROM M IC RO ELEC TR O N IC S C E N T E R DESCRIPTION Hughes H 3208 is a CMOS Electrically Erasable and Programmable ROM EEPROM organized as 1024 x 8 bits. Read, w rite and erase operations are performed w ith a single 5 V power supply using TTL

4279g

Abstract: G52E111 G74B111 ET-46 microtran t5115 IFS-0505 TTC05 TTC 103 2PC 502 m 8044
Contextual Info: ~tamura Product Number Index MICROTRAIM, Part No. Page Part No. Page 1 0A 006 20 3FD -348 18 Part No. 3FS -2120 Page 18 630A4201 33 A K S 25-12 39 DCM 4-PC 10A 007 20 3FD -356 18 3FS -216 18 630 A 4 3 0 4 33 A K S 25-15 39 DCM 5-PC 6 1 0A 008 20 3FD -410 18

Contextual Info: MOTOROLA Order this document by MCM67B618A/D SEMICONDUCTOR TECHNICAL DATA MCM67B618A 64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write The MCM67B618A is a 1,179,648 bit synchronous fast static random access memory designed to provide a burstable, high-performance, secondary cache

circuit diagrams retu 3.02

Abstract: APPLIED MICROSYSTEMS CORP 68020 a23 445-1 VMIVME DR11W 0000A018 Panduit 050-040-455 S43A MC68153 perkin
Contextual Info: VMIVME-DR11W-A VMEbus-T0-DR11W INTERFACE INSTRUCTION MANUAL DOCUMENT NO. 500-000121-000 E Revised 08 December 1993 VME MICROSYSTEMS INTERNATIONAL CORPORATION 12090 SOUTH MEMORIAL PARKWAY HUNTSVILLE, AL 35803-3308 205 880-0444 1-800-322-3616 N O T IC E The information in this document has been carefully checked and is

Contextual Info: AC-AC W ALL P LU G -IN TR A N S FO R M ER S 1 2 0 V A C , 60 H z . A N D 2 2 0 V A C , 5 0 H i. DVE File No. E82180 File No. LR38236 File No. 7969-3330, 7969-3331 MICROTRAN. FEATURES • UL Class II Xfmrs-UL 1310. • UL 544 Medical Capability • Thermal Overload Protection.

FA 4301

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67B618A Product Preview 64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write The MCM67B618A is a 1,179,648 bit synchronous fast static random access memory designed to provide a burstable, high-performance, secondary cache

Contextual Info: MOTOROLA £ Q SC -CHEHORY/ASI bSE D • L 3 b 7 2 S l M O TO R O LA bTT ■ N0T3 62S950A 32K x 9 Bit Synchronous Static RAM E LEC TR IC A LLY T E S T E D PER: M PG 62S950A The 62S950A is a 294,912 bit synchronous static random access memory organized as 32,768 words of 9 bits, fabricated using Motorola's

i486 SL

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 64K x 18 Bit BurstRAM Synchronous Fast Static RAM MCM67B618 With Burst Counter and Self-Timed Write The MCM67B618 is a 1,179,648 bit synchronous fast static random access memory designed to provide a burstable, high- performance, secondary cache

UPD42S4800-70

Contextual Info: NEC b l4S7S2S O Om iD*! m • NECEj A T A SHEET MOS INTEGRATED CIRCUIT ¿¿PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The /IPD42S4800, 424800 are 524 288 words by 8 bits dynam ic CMOS RAMs. The fast page mode capability

mcm2018a

Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM69H618 Product Preview 64Kx 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write The MCM69H618 is a 1,179,648 bit synchronous fast static random access memory designed to provide a burstable, high-performance, secondary cache

210xB

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC™ PReP/CHRP Platforms MPC2105B MPC2106B The MPC2105B and the MPC2106B are designed to provide burstable, high performance L2 cache for the PowerPC 60x microprocessor family in conformance

Contextual Info: •an ‘AHlSnaN I S0IN0H10313 N O U V I A V NVdVP 9SE00LPS I CA3U ‘EOOZ O) IHOIHAdOO 33dd •AdViaiddOdd -Aia H0103NNOO 3VP ( 1 H0 I3M)¥1 •QddV ( ’ON ONIMVaa)^-#MH CO 'QddV 0 0 2 Id-L N - 0 9 d A - d * - d M • a n ‘A H i s n a N i S0IN0dl0313

MSM514266

Contextual Info: O K I semiconductor MSM514266B_ 262,144-WORD x 4-BIT DYNAMIC RAM GENERAL DESCRIPTION The M S M 514266B is a new generation dynamic RAM organized as 262,144 words x 4 bits. The technology used to fabricate the M SM 514266B is O K I’s C M O S silicon gate process technology.