3100MHZ Search Results

3100

Contextual Info: JXWBPLO-3100 3100MHz PLL Oscillator Test report is for reference only. TEST REPORT For JXWBPLO-3100 1 JXWBPLO-3100 3100MHz PLL Oscillator Technical Specification Frequency MHz 3100 Level(dBm) +10 -100 @1KHz Phase Noise (dBc/Hz) -75 Spurious(dBc) ±4(-20˚C ~ +70˚C)

Contextual Info: Voltage Controlled Oscillators MW500-1620F 2775MHz to 3100MHz Specifications Frequency Tuning Voltage Power Output Phase Noise 2775MHz to 3100MHz 0.5/11.5 V 6 +/- 2 dBm 10 kHz Offset 100 kHz Offset Frequency Pushing Frequency Pulling Harmonic Suppression -89 typ dBc/Hz

Contextual Info: Voltage Controlled Oscillators MW500-1619F 3100MHz to 3450MHz Specifications Frequency Tuning Voltage Power Output Phase Noise 3100MHz to 3450MHz 0.5/12 V 6 +/- 2 dBm 10 kHz Offset 100 kHz Offset Frequency Pushing Frequency Pulling Harmonic Suppression -89 typ dBc/Hz

12MHZ

Abstract: 1083 MW500-1083
Contextual Info: Voltage Controlled Oscillators MW500-1083 3100MHz to 3450MHz Specifications Frequency Tuning Voltage Power Output Phase Noise 3100MHz to 3450MHz 0.5/4.5 V 0 +/- 2 dBm 10 kHz Offset 100 kHz Offset Frequency Pushing Frequency Pulling Harmonic Suppression -91 typ dBc/Hz

Contextual Info: Voltage Controlled Oscillators MW500-1619 3100MHz to 3450MHz Specifications Frequency Tuning Voltage Power Output Phase Noise 3100MHz to 3450MHz 0.5/12 V 6 +/- 2 dBm 10 kHz Offset 100 kHz Offset Frequency Pushing Frequency Pulling Harmonic Suppression -89 typ dBc/Hz

Contextual Info: Voltage Controlled Oscillators MW500-1554 2300MHz to 3100MHz Specifications Frequency Tuning Voltage Power Output Phase Noise 2300MHz to 3100MHz 0.5/11 V 2 +/- 2 dBm 10 kHz Offset 100 kHz Offset Frequency Pushing Frequency Pulling Harmonic Suppression -90 typ dBc/Hz

Contextual Info: JXWBOH-T-1000-3100-10 1000~3100MHz Directional Coupler Test report is for reference only. TEST REPORT For JXWBOH-T-1000-3100-10 Page 1 JXWBOH-T-1000-3100-10 1000~3100MHz Directional Coupler Technical Specification Frequency Range GHz 1.0-3.1 Insertion Loss(dB)

Contextual Info: Voltage Controlled Oscillators MW500-1673F 3100MHz to 3340MHz Specifications Frequency Tuning Voltage Power Output Phase Noise 3100MHz to 3340MHz 0.5/10 V 6 +/- 3.5 dBm 10 kHz Offset 100 kHz Offset Frequency Pushing Frequency Pulling Harmonic Suppression -93 typ dBc/Hz

Contextual Info: Power Amplifiers SM3134-47L 3100MHz to 3400MHz Specifications RF Frequency P1dB Power Output Linear Gain Gain Flatness Over Band Gain Change Over Temp Third Order Intercept OIP3 Input Return Loss Output Return Loss Min 3100 47 Typ Max 3400 55 ±1 ±1 ±1

Contextual Info: Specification for a Bandpass LC Filter MtronPTI P/N: LF9415 I. General & Electrical Requirements: 1. Center Frequency FON : 3300MHz 2. 1dB Passband: 3100MHz to 3500MHz (BW1: 400MHz minimum) 3. Insertion Loss (@ FON): ≤ 2.0dB 4. VSWR: 1.5:1 maximum 5. Rejection (ref. to IL @ FON)

Contextual Info: UMV-3050-R16-G UMV-3050R16-GUltra-linear tuning VOLTAGE CONTROLLED OSCILLATOR ULTRA-LINEAR TUNING VOLTAGE CONTROLLED OSCILLATOR Package: R16, 12.7mm x 12.7mm x 4.57mm VCC Features  Linear Tuning/100MHz Frequency  Frequency: 3000MHz to 3100MHz  Resonator: Microstrip

NJS6928

Abstract: NJS4310 NJS6317 NJS6930 NJT1946A NJX4410 NJX4415
Contextual Info: MICROWAVE DEVICES, COMPONENTS & EQUIPMENTS HIGH POWER DIODE LIMITERS LENGTH MIC RADAR FRONT END MODULES TYPE IF PRBQHEKGYÍ BOISE RANGE FIGURE 60 MHz " " " 3dB 4.0 5.0 3.5 NJS4310 3000-3100MHz ” NJ24314 " NJT1307 NJT1946A 9300~9500MHz TYPE OPERATING VOLTAGE

3100

Contextual Info: JXWBPLO-3100 3100MHz PLL Oscillator Test report is for reference only. TEST REPORT For JXWBPLO-3100 Page 1 JXWBPLO-3100 3100MHz PLL Oscillator Technical Specification Frequency MHz 3100 Level(dBm) +10 -100 @1KHz Phase Noise (dBc/Hz) -75 Spurious(dBc) ±4(-20˚C ~ +70˚C)

LQP15MN3N5W02p

Abstract: LQP15MN3N9B02p
Contextual Info: Inductors Coils > Chip Inductor (Chip Coil) > for High Frequency Film Type Data Sheet Chip Inductor (Chip Coil) 1 for High Frequency Film Type LQP15M Series (0402 Size) • Packaging 0.5±0.1 ■ Dimensions Packaging Minimum Quantity D 180mm Paper Tape 10000

Contextual Info: High Performance RF for the Most Demanding Applications GaN High Performance RF Power, GaN NXP’s mainstream GaN Technology Enables an NXP solutions offering that is technology agnostic NXP’s LDMOS and GaN can be combined in a line-up for optimum performance and cost

VCO190-902T

Abstract: M3500-2235 8051 edge detection M3500
Contextual Info: RF PLL Frequency Synthesizers ADF4110/ADF4111/ADF4112/ADF4113 Data Sheet FEATURES GENERAL DESCRIPTION ADF4110: 550 MHz; ADF4111: 1.2 GHz; ADF4112: 3.0 GHz; ADF4113: 4.0 GHz 2.7 V to 5.5 V power supply Separate charge pump supply VP allows extended tuning

AM2931-110

Abstract: 42V32
Contextual Info: AM2931-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 105 W MIN. WITH 6.2 dB GAIN

HHM1583B1

Contextual Info: 1/2 Multilayer Chip Baluns For UWB Conformity to RoHS Directive HHM Series HHM1583B1 SHAPES AND DIMENSIONS/CIRCUIT 2.0±0.15 5 6 4 +0.1 0.25–0.2 1.25±0.15 6 TERMINAL FUNCTIONS 0.95±0.1 1 2 0.2±0.2 Balanced output 100Ω 1 0.3±0.2 0.35±0.2 3 Unbalanced port

Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: SGS-THOMSON AM82731-050 1H[ RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1 dB OVER­ DRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE

Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

GaN hemt

Abstract: power transistor gan s-band air surveillance system diagram using radar
Contextual Info: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

ATC100B620

Abstract: L22 amplifier Gan hemt transistor RFMD
Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 