30X30X0 Search Results

Contextual Info: DC AXIAL FAN 30x30x06mm CT A x ia l F a n s SS I DC H ousing/B lade: T herm oplastic PBT, UL 94V -0 Insulation Resistance: 10M £2, 5 0 0 V D C /m in b e tw e e n b a re w ire and fram e D ie le c tric S trength: 5 m A max. 500V AC /m in b e tw e e n b a re w ire a nd fram e

Contextual Info: RQ3E130MN Nch 30V 13A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 8.1mW RDS(on) at 4.5V (Max.) 11.6mW ID 13A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. 3) Pb-free lead plating ; RoHS compliant (1) Source (2) Source (3) Source

Contextual Info: RQ3E150MN Nch 30V 15A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 6.7mW RDS(on) at 4.5V (Max.) 8.9mW ID 15A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) High Power Small Mold Package (HSMT8).

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

RD10UJ

Abstract: RD11UJ RD12UJ RD13UJ RD15UJ RD16UJ RD18UJ RD39UJ
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

transistors equivalent

Abstract: UPC8181TB
Contextual Info: 3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS UPC8181TB FEATURES DESCRIPTION • HIGH-DENSITY SURFACE MOUNTING: 6-pin super minimold package 2.0 x 1.25 x 0.9 mm The UPC8181TB is a silicon Monolithic Microwave Integrated Circuit designed as an amplifier for mobile communications.

RRR040P03

Abstract: 12Switch
Contextual Info: RRR040P03 Datasheet Pch -30V -4A Power MOSFET lOutline VDSS -30V RDS on (Max.) 45mW ID -4A PD 1W lFeatures TSMT3 (3) (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).

Contextual Info: TT8K2 Nch 30V 2.5A Power MOSFET Datasheet lOutline VDSS 30V RDS on (Max.) 90mW ID 2.5A PD 1.25W lFeatures (8) TSST8 (7) (6) (5) (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8).

DVFN240S

Contextual Info: QS8K13 Datasheet Dual Nch 30V 6.0A Power MOSFET lOutline VDSS 30V RDS on (Max.) 28mW ID 6A PD 1.5W lFeatures TSMT8 (8) (7) (6) (5) (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate 2) Built-in G-S Protection Diode.

Contextual Info: QS8K11 QS8K11 Datasheet Dual Nch 30V 3.5A Power MOSFET lOutline VDSS 30V RDS on (Max.) 50mW ID 3.5A PD 1.5W lFeatures (8) (7) (6) (5) TSMT8 (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate 2) Built-in G-S Protection Diode.

Contextual Info: RRH140P03 Pch -30V -14A Power MOSFET Datasheet lOutline VDSS -30V RDS on (Max.) 7mW ID -14A PD 2.0W lFeatures (5) (6) SOP8 (7) (8) (4) (3) (2) (1) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).

Contextual Info: RVQ040N05 Nch 45V 4A Power MOSFET Datasheet lOutline VDSS 45V RDS on (Max.) 53mW ID 4A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).

Contextual Info: RQ1E075XN Nch 30V 7.5A Power MOSFET Datasheet lOutline VDSS 30V RDS on (Max.) 17mW ID 7.5A PD 1.5W lFeatures (8) TSMT8 (7) (6) (1) (2) (3) (5) (4) lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) Built-in G-S Protection Diode.

Contextual Info: QS8J11 Pch -12V -3.5A Power MOSFET Datasheet lOutline VDSS -12V RDS on (Max.) 43mW ID -3.5A PD 1.5W lFeatures (8) TSMT8 (7) (6) (1) (2) (3) (5) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT8).

Contextual Info: RQ1C075UN Nch 20V 7.5A Power MOSFET Datasheet lOutline VDSS 20V RDS on (Max.) 16mW ID 7.5A PD 1.5W lFeatures (8) TSMT8 (7) (6) (1) (2) (3) (5) (4) lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) 1.5V Drive. 3) Built-in G-S Protection Diode.

Contextual Info: QS8J4 Pch -30V -4A Power MOSFET Datasheet lOutline VDSS -30V RDS on (Max.) 56mW ID -4A PD 1.5W lFeatures (8) TSMT8 (7) (6) (1) (2) (3) (5) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT8).

Contextual Info: TA58L05, 06, 08, 09, 10, 12, 15F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA58L05F, TA58L06F, TA58L08F, TA58L09F TA58L10F, TA58L12F, TA58L15F 250 mA Low Dropout Voltage Regulator The TA58L*F Series consists of fixed-positive-output, low-dropout

Contextual Info: RRQ045P03 Datasheet Pch -30V -4.5A Power MOSFET lOutline VDSS -30V RDS on (Max.) 35mW ID -4.5A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).

Contextual Info: QS8K11 Datasheet Dual Nch 30V 3.5A Power MOSFET lOutline VDSS 30V RDS on (Max.) 50mW ID 3.5A PD 1.5W lFeatures (8) (7) (6) (5) TSMT8 (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate 2) Built-in G-S Protection Diode.

Contextual Info: RTQ020N05 Datasheet Nch 45V 2A Power MOSFET lOutline VDSS 45V RDS on (Max.) 190mW ID 2A PD 1.25W (6) (5) TSMT6 (4) (1) (2) lFeatures (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).

Contextual Info: RSQ015N06 Datasheet Nch 60V 1.5A Power MOSFET lOutline VDSS 60V RDS on (Max.) 290mW ID 1.5A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).

grm36 murata

Abstract: GRM36 R04003 RR0816 TFL0510
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

UPC2712TB

Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: RSQ015N06 Nch 60V 1.5A Power MOSFET Datasheet lOutline VDSS 60V RDS on (Max.) 290mW ID 1.5A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).