30V 60A POWER P MOSFET Search Results

F1S60P03

Abstract: f1s60 RF1S60P03 RF1S60P03SM RFG60P03 RFP60P03 TB334
Contextual Info: [ /Title RFG60 P03, RFP60P 03, RF1S60 P03, RF1S60 P03SM /Subject (60A, 30V, RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM Semiconductor 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 60A, 30V These P-Channel power MOSFETs are manufactured using

RFP60P03

Abstract: RF1S60P03SM RF1S60P03SM9A RFG60P03 TB334
Contextual Info: RFG60P03, RFP60P03, RF1S60P03SM Data Sheet January 2002 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs Features • 60A, 30V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

RFP60P03

Abstract: RF1S60P03SM RF1S60P03SM9A RFG60P03 TB334 IS421
Contextual Info: RFG60P03, RFP60P03, RF1S60P03SM Data Sheet July 1999 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs • 60A, 30V Formerly developmental type TA49045. Ordering Information PACKAGE 3951.3 Features These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

Contextual Info: P *3 3 S RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 60A, 30V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti­

Contextual Info: in te rrii RFG60P03, RFP60P03, RF1S60P03SM D a la S h e e t J u ly 1 9 9 9 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs F ile N u m b e r 3 9 5 1 .3 Features • 60A, 30V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

F1S60P03

Abstract: RF1S60P03 RF1S60P03SM RFG60P03 RFP60P03 RS-380
Contextual Info: RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM S E M I C O N D U C T O R 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages • 60A, 30V JEDEC STYLE TO-247 SOURCE DRAIN GATE • rDS ON = 0.027Ω • Temperature Compensating PSPICE Model

60p03

Abstract: PLIC
Contextual Info: f jì RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM HARRIS S E M I C O N D U C T O R 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages • 60A, 30V JE DEC S TYLE TO -247 SOURCE ’ rDS ON = 0.027S2 DRAIN • Temperature Compensating PSPICE Model

24v 60a mosfet

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT60P03 Power MOSFET -60A, -30V, P-CHANNEL POWER MOSFETS „ DESCRIPTION The UTC UTT60P03 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance and it can also withstand

Contextual Info: AP70T03GS/P RoHS-compliant Product Advanced Power Electronics Corp. Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS D 30V RDS ON Low Gate Charge Fast Switching Speed ID G 9m 60A S Description G D Advanced Power MOSFETs from APEC provide the

f1s60

Contextual Info: RFG60P03, RFP60P03, RF1S60P03SM Data Sheet Title FG6 03, P60 3, 1S6 03S bt A, V, 27 m, anwer OSTs utho eyrds ter- July 1999 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs Features These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

AP70T03GP

Abstract: AP70T03GS
Contextual Info: AP70T03GS/P RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching Speed BVDSS 30V RDS ON 9mΩ ID G 60A S Description Advanced Power MOSFETs from APEC provide the

Contextual Info: AP70T03AS/P Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching BVDSS 30V RDS ON 9mΩ ID G 60A S Description G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

Contextual Info: STP60NE03L-12 N - CHANNEL 30V - 0.009 i l - 60A - T0-220 STripFET POWER MOSFET TYP E S T P 6 0 N E 0 3 L -1 2 • . . . . . . . V R d S o ii Id < 0.0 1 2 Q. 60 A dss 30 V TYPICAL R D S (on) = 0.009 A VALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

D 92 M - 02 DIODE

Abstract: D 92 M - 03 DIODE KF60N06P c 92 M - 02 DIODE
Contextual Info: SEMICONDUCTOR KF60N06P TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

75332s

Contextual Info: inter«! HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs Ultras Th e se N -C hannel pow e r M O S F E Ts are m anu facture d u sing the innovative U ltraFET process. T h is a dvanced proce ss te ch n olo gy

irl2203n

Abstract: 24v 60a mosfet
Contextual Info: PD - 9.1366C International XOR Rectifier IRL2203N HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 30V FÌDS on = 0.0070

IRL2203N equivalent

Abstract: C564 c562
Contextual Info: PD - 9.1378B International IOR Rectifier IRLI2203N HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS ® Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated

RU60P60R

Abstract: ruichips
Contextual Info: RU60P60R P-Channel Advanced Power MOSFET Features Pin Description • -60V/-60A, RDS ON =22mΩ(Typ.)@VGS=-10V • Low On-Resistance • Super High Dense Cell Design • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature

MOSFET N-CHANNEL 60v 60A

Abstract: 60n06 60n06l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 60N06 Power MOSFET 60A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom

IRL2203N

Abstract: mosfet p 30v 60a
Contextual Info: PD - 91366 IRL2203N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 7.0mΩ G ID = 116A‡ S Description Advanced HEXFET® Power MOSFETs from International

60N06

Abstract: of 60N06 60N06L-TA3-T transistor 60n06 30V 60A power p MOSFET 60N06-TA3-T mosfet p 30v 60a
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 60N06 Power MOSFET 60 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom

irl2203n

Abstract: *L2203N
Contextual Info: PD - 91366 IRL2203N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 7.0mΩ G ID = 116A‡ S Description Advanced HEXFET® Power MOSFETs from International

Contextual Info: PD - 91366 IRL2203N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 7.0mΩ G ID = 116A‡ S Description Advanced HEXFET® Power MOSFETs from International

Contextual Info: PD - 94953 IRL2203NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 30V l RDS on = 7.0mΩ G ID = 116A‡