30V 20A POWER Search Results

Contextual Info: HUF76107D3, HUF76107D3S Data Sheet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title HUF76 107D3, HUF76 107D3 S /Subject (20A, 30V, 0.052 Ohm, NChannel, Logic Level UltraF ET Power MOSFETs) /Autho r () /Keywords (Intersil Corporation,

HUF76107P3

Abstract: AN7254 AN7260 AN9321 AN9322 TB334 76107P TC298
Contextual Info: HUF76107P3 Data Sheet October 1999 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title HUF7 6107P 3 /Subject (20A, 30V, 0.052 Ohm, NChannel, Logic Level UltraF ET Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel,

Contextual Info: STSJ100NHS3LL N-CHANNEL 30V - 0.0032Ω - 20A - PowerSO-8 STripFET™III Power MOSFET PLUS MONOLITHIC SCHOTTKY PRELIMINARY DATA General features Type VDSS RDS on ID STSJ100NHS3LL 30V 0.004Ω 20A(1) • Optimal RDS(on) x Qg trade-off @ 4.5V ■ Reduced switching losses

Contextual Info: RS1E200GN Nch 30V 20A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 4.6mW RDS(on) at 4.5V (Max.) 6.1mW ID 20A PD 3.0W lFeatures HSOP8 lInner circuit 1) Low on - resistance. 2) High Power Package (HSOP8). (1) Source (2) Source (3) Source (4) Gate

JESD97

Abstract: STSJ100NHS3LL
Contextual Info: STSJ100NHS3LL N-channel 30V - 0.0032Ω - 20A - PowerSO-8 STripFET™III Power MOSFET plus monolithic schottky General features Type VDSS RDS on ID STSJ100NHS3LL 30V 0.0042Ω 20A(1) 1. This value is rated accordingly to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V

JESD97

Abstract: STS20NHS3LL
Contextual Info: STS20NHS3LL N-channel 30V - 0.0032Ω - 20A - SO-8 STripFET™III Power MOSFET plus monolithic schottky General features Type VDSS RDS on ID STS20NHS3LL 30V 0.0042Ω 20A(1) 1. This value is rated accordingly to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V

JESD97

Abstract: STS20NHS3LL
Contextual Info: STS20NHS3LL N-channel 30V - 0.0032Ω - 20A - SO-8 STripFET™III Power MOSFET plus monolithic schottky General features Type VDSS RDS on ID STS20NHS3LL 30V 0.0042Ω 20A(1) 1. This value is rated accordingly to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V

Contextual Info: HAJtms S HUF76129D3, HUF76129D3S S e m ic o n d u c to r 7 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs May 1998 | Features • Logic Level Gate Drive • 20A, 30V • Ultra Low On-Resistance, ros ON = 0.016£2 • Temperature Compensating PSPICE Model

Contextual Info: FDS8812NZ N-Channel PowerTrench MOSFET 30V, 20A, 4.0mΩ Features General Description ̈ Max rDS on = 4.0mΩ at VGS = 10V, ID = 20A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.

K800

Abstract: JESD97 STK800
Contextual Info: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 80.4nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances

K800

Abstract: JESD97 STK800
Contextual Info: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances

JESD97

Abstract: K800 STK800
Contextual Info: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested

SSD9435

Contextual Info: SSD9435 -20A, -30V,RDS ON 50m Ω P-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product Description TO-252 The SSD9435 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient

Contextual Info: RS1E200AH Nch 30V 20A Power MOSFET Datasheet l Outline VDSS 30V RDS on (Max.) 5.2mΩ ID ±20A PD 3W HSOP8 l Inner circuit l Features 1) Low on - resistance.

RECTIFIER STACK TOSHIBA

Abstract: 20FWJ2CZ47M TOSHIBA RECTIFIER
Contextual Info: 20FWJ2CZ47M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 20FWJ2CZ47M Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Peak Forward Voltage : VFM ≤ 0.47V Repetitive Peak Reverse Voltage : VRRM = 30V Average Output Rectified Current : IO = 20A

HUF76107P3

Abstract: AN7260 AN7254 AN9321 AN9322 TB334 TC298
Contextual Info: HUF76107P3 Data Sheet December 2001 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology

FDS8812NZ

Contextual Info: FDS8812NZ N-Channel PowerTrench tm MOSFET 30V, 20A, 4.0mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.

TC298

Contextual Info: HUF76107P3 Data Sheet October 1999 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Ordering Information PART NUMBER HUF76107P3 PACKAGE TO-220AB 4382.5 Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using

20FWJ2CZ47M

Contextual Info: 20FWJ2CZ47M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 20FWJ2CZ47M SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Peak Forward Voltage: VFM ≤ 0.47V • Repetitive Peak Reverse Voltage: VRRM = 30V • Average Output Rectified Current: IO = 20A

Contextual Info: HUF76129D3, HUF76129D3S Data Sheet 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

mosfet 20a 300v

Abstract: AM3921P 2SK2473-01
Contextual Info: 2SK2473-01 N-channel MOS-FET FAP-II Series 300V > Features - 0,2Ω 20A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

N-Channel MOSFET 200v

Abstract: MOSFET 200v 20A n.channel
Contextual Info: 2SK2518-01MR N-channel MOS-FET FAP-IIA Series 200V > Features - 0,13Ω 20A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

76129d

Abstract: MOSFET 76129D AN9321 AN9322 HUF76129D3 HUF76129D3S HUF76129D3ST TB334 KP-57 m65e
Contextual Info: HUF76129D3, HUF76129D3S Data Sheet 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

76129d

Contextual Info: HUF76129D3, HUF76129D3S Data Sheet 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,