30V 20A 10KHZ POWER MOSFET Search Results
30V 20A 10KHZ POWER MOSFET Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN | |||
MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN | |||
MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN | |||
MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN | |||
MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
30V 20A 10KHZ POWER MOSFET Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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R6020FNJContextual Info: R6020FNJ Nch 600V 20A Power MOSFET Datasheet l Outline VDSS 600V RDS on (Max.) 0.28Ω ID ±20A PD 50W LPT(S) l Inner circuit l Features 1) Fast reverse recovery time (trr). |
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R6020FNJ R6020FNJ | |
30V 20A 10KHz power MOSFET
Abstract: 20A igbt 1030RG 1200v 20a IGBT Pchannel 1200v 25a IGBT
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APS0602 200V/20A APS0602 JESD-22, MIL-STD-883-3015 30V 20A 10KHz power MOSFET 20A igbt 1030RG 1200v 20a IGBT Pchannel 1200v 25a IGBT | |
Contextual Info: R6020FNX Data Sheet Nch 600V 20A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.25W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed. |
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R6020FNX O-220FM R1102A | |
Contextual Info: R6020FNX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.25W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed. |
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R6020FNX O-220FM R1102A | |
Contextual Info: R6020ANX Nch 600V 20A Power MOSFET Datasheet Outline VDSS 600V RDS on (Max.) 0.22Ω ID 20A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. |
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R6020ANX O-220FM R1120A | |
R6020-ANXContextual Info: R6020ANX Datasheet Nch 600V 20A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.22Ω ID 20A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. |
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R6020ANX O-220FM R1120A R6020-ANX | |
FOD3120SD
Abstract: 3120 v IGBT DRIVER FOD3120 a 3120 pin diagram optocoupler FOD3120TV 20A igbt fod3120v fod3120 applications FOD3150 control motor dc 6v
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FOD3120 00V/20A FOD3120SD 3120 v IGBT DRIVER a 3120 pin diagram optocoupler FOD3120TV 20A igbt fod3120v fod3120 applications FOD3150 control motor dc 6v | |
Contextual Info: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 1200V/20A IGBT/MOSFET. It is ideally suited for fast switching |
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FOD3120 35kV/Â FOD3120 200V/20A 200V/20A 400ns | |
FOD3150
Abstract: fod3120 FOD3150 application note 5A optocoupler FOD3120SDV IGBT/MOSFET Gate Drive FOD3120S FOD3120SD FOD3120SV FOD3120V
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FOD3120 FOD3120 200V/20A 200V/20A 400ns 100nsthout FOD3150 FOD3150 application note 5A optocoupler FOD3120SDV IGBT/MOSFET Gate Drive FOD3120S FOD3120SD FOD3120SV FOD3120V | |
fod3120
Abstract: 1200v 20a IGBT fod3120 applications 20A igbt FOD3120TV FOD3120SD FOD3150 FOD3120SDV FOD3120V Gate Drive Optocoupler
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FOD3120 FOD3120 200V/20A 200V/20A 400ns 100nsthout 1200v 20a IGBT fod3120 applications 20A igbt FOD3120TV FOD3120SD FOD3150 FOD3120SDV FOD3120V Gate Drive Optocoupler | |
FOD3150Contextual Info: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 1200V/20A IGBT/MOSFET. It is ideally suited for fast switching |
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FOD3120 200V/20A FOD3150 | |
Contextual Info: FOD3150 High Noise Immunity, 1.0A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 20kV/µs The FOD3150 is a 1.0A Output Current Gate Drive Optocoupler, capable of driving most 800V/20A IGBT/MOSFET. It is ideally suited for fast switching |
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FOD3150 20kV/Â FOD3150 00V/20A 500ns 300ns 10C/sec | |
FOD3150
Abstract: FOD3120 FOD3150SD IEC60747-5-2 Gate Drive Optocoupler
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FOD3150 FOD3150 00V/20A 500ns 300ns 10C/sec FOD3120 FOD3150SD IEC60747-5-2 Gate Drive Optocoupler | |
IXDD504D2Contextual Info: IXDD504/ IXDE504 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 4 Amps |
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IXDD504/ IXDE504 1800pF IXDD504 IXDE504 Edisonstrasse15 D-68623; IXDD504D2 | |
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A 3150 igbt driver
Abstract: FOD3120 30V 20A 10KHz power MOSFET FOD3150 IGBT/MOSFET Gate Drive 3150 optocoupler A 3150 opto IGBT Gate Drive Optocoupler induction heating circuits FOD3150SD
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FOD3150 FOD3150 00V/20A 500ns 300ns A 3150 igbt driver FOD3120 30V 20A 10KHz power MOSFET IGBT/MOSFET Gate Drive 3150 optocoupler A 3150 opto IGBT Gate Drive Optocoupler induction heating circuits FOD3150SD | |
FOD3150 application noteContextual Info: FOD3150 High Noise Immunity, 1.0A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 20kV/µs The FOD3150 is a 1.0A Output Current Gate Drive Optocoupler, capable of driving most 800V/20A IGBT/MOSFET. It is ideally suited for fast switching |
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FOD3150 20kV/Â FOD3150 00V/20A 500ns 300ns FOD3150 application note | |
Contextual Info: FOD3150 High Noise Immunity, 1.0A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 20kV/µs The FOD3150 is a 1.0A Output Current Gate Drive Optocoupler, capable of driving most 800V/20A IGBT/MOSFET. It is ideally suited for fast switching |
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FOD3150 20kV/Â FOD3150 00V/20A 500ns 300ns | |
30V 20A 10KHz power MOSFET
Abstract: IXDD504 IXDD504D2 IXDD504PI driving mosfet/igbt with pulse transformer driver IXDD504SIA IXDE504 IXDE504PI IXDE504SIA IXDD504SI
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IXDD504/ IXDE504 1800pF IXDD504 IXDE504 Edisonstrasse15 D-68623; 30V 20A 10KHz power MOSFET IXDD504D2 IXDD504PI driving mosfet/igbt with pulse transformer driver IXDD504SIA IXDE504PI IXDE504SIA IXDD504SI | |
RT8159A
Abstract: RT8159 1000w power amplifier circuit diagram 1000w power AMPLIFIER pcb circuit Linear Technology LDO PCB Layout Guidelines 1000w 12v dc regulator MOSFET FOR 10khz DRV10V mosfet power amplifier 1000w 1000w power AMPLIFIER pcb circuit layout
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RT8159A RT8159A DS8159A-02 RT8159 1000w power amplifier circuit diagram 1000w power AMPLIFIER pcb circuit Linear Technology LDO PCB Layout Guidelines 1000w 12v dc regulator MOSFET FOR 10khz DRV10V mosfet power amplifier 1000w 1000w power AMPLIFIER pcb circuit layout | |
transistor c246
Abstract: transistor c243 C246 C243 transistor IRGBF30F
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OCR Scan |
10kHz) IRGBF30F O-220AB TQ-220AB C-248 transistor c246 transistor c243 C246 C243 transistor IRGBF30F | |
transistor c246
Abstract: transistor c245 c245 transistor
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OCR Scan |
IRGBF30F 10kHz) O-220AB C-247 46S5455 TQ-220AB C-248 transistor c246 transistor c245 c245 transistor | |
transistor c257
Abstract: c255 c258 13 560 IRGPF30F
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OCR Scan |
10kHz) IRGPF30F O-247AC C-260 transistor c257 c255 c258 13 560 IRGPF30F | |
transistor c257Contextual Info: P D -9.1026 International lüRectifier IRGPF30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve |
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IRGPF30F 10kHz) O-247AC 554SE C-260 D0500S0 transistor c257 | |
Contextual Info: RT9259C 12V Synchronous Buck PWM DC-DC and Linear Power Controller General Description Features The RT9259C is a dual-channel DC/DC controller specifically designed to deliver high quality power where 12V power source is available. This part consists of a |
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RT9259C RT9259C DS9259C-00 |