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    onsemi NGTB30N135IHRWG

    IGBT TRENCH FS 1350V 60A TO-247
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    Avnet Americas NGTB30N135IHRWG Tube 329
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    Rochester Electronics NGTB30N135IHRWG 29,811 1
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    Rochester Electronics LLC NGTB30N135IHRWG

    IGBT TRENCH FS 1350V 60A TO-247
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    DigiKey NGTB30N135IHRWG Bulk 109
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    FLIP ELECTRONICS NGTB30N135IHRWG

    IGBT TRENCH FS 1350V 60A TO-247
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    DigiKey NGTB30N135IHRWG Tube 250
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    onsemi NGTB30N135IHR1WG

    IGBT TRENCH FS 1350V 60A TO-247
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    Vyrian NGTB30N135IHR1WG 2,251
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    30N135IHR Datasheets Context Search

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    30n135ihr

    Contextual Info: 30N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, provides superior performance in demanding switching applications, and offers low


    Original     		NGTB30N135IHRWG NGTB30N135IHR/D 30n135ihr PDF