30ML Search Results

Contextual Info: 1 I IB : I File No. LH7E-MJ1B I SHEET 1 o ~ / SPECIFICATIONS: Current Rating: 3A AMP Dielectric Voltage:500V AC For 1 Minute Contact Resistance:30Mllliohm s Max. Insulator Resistance:5000M egohm s Min. lnsulator:PBT+30% Glass Filled UL 94V —0, Contact :Phosphor Bonze Or B rass

Contextual Info: 1 ~5- I — File No. LH7E-MJ1B-BGB r SHEET 1 / SPECIFICATIONS: Current Rating: 3A AMP Dielectric Voltage:500V AC For 1 Minute C ontact Resistance:30Mllliohms Max. Insulator Resistance:5000Megohms Min. lnsulator:PBT+30% Glass Riled UL 94V—0 C ontact ¡Phosphor Bonze Or Brass

sot1210

Abstract: PSMN3R0-30MLC
Contextual Info: PA K 33 PSMN3R0-30MLC LF N-channel 30 V 3.15 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 2 — 22 May 2012 Objective data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is

Contextual Info: LF PA K 33 PSMN6R4-30MLD N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 10 October 2013 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers

Contextual Info: LF PA K 33 PSMN2R4-30MLD N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 7 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers

Contextual Info: LF PA K 33 PSMN7R5-30MLD N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 12 March 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers

2.5mm stereo jack SMT

Abstract: stereo jack 2.5mm
Contextual Info: co co o 1 02.60 Materials and Finish Housing: LCP reflow compatible , UL 94V-0 Rated CO o s Terminals: Copper Alloy, Gold Flash all over Nickel Plating 10 c\i Tm 0> Electrical Characteristics 8 Contact Resistance: Before Test: 30mllliohms Max. After Durability Test:

Contextual Info: LF PA K 33 PSMN6R4-30MLD N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 5 November 2013 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers

Contextual Info: LF PA K 33 PSMN6R5-30MLD N-channel 30 V, 6.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 10 October 2013 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers

Contextual Info: PSMN020-30MLC N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using TrenchMOS Technology 4 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and

Contextual Info: LF PA K 33 PSMN6R4-30MLD N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 15 August 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers

Contextual Info: LF PA K 33 PSMN6R5-30MLD N-channel 30 V, 6.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 5 November 2013 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers

7d530l

Contextual Info: LF PA K 33 PSMN7R5-30MLD N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 1 October 2013 Objective data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers

Contextual Info: LF PA K 33 PSMN4R2-30MLD N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 1 October 2013 Objective data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers

Contextual Info: PA K 33 PSMN013-30MLC LF N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 4 — 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is

Contextual Info: PA K 33 PSMN4R4-30MLC LF N-channel 30 V 4.65 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 3 — 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is

Contextual Info: 1 I IB : I File No. LH7E-MJ1B I SHEET 1 o ~ / SPECIFICATIONS: Current Rating: 3A AMP Dielectric Voltage:500V AC For 1 Minute Contact Resistance:30Mllliohm s Max. Insulator Resistance:5000M egohm s Min. lnsulator:PBT+30% Glass Filled UL 94V —0, Contact :Phosphor Bonze Or B rass

Contextual Info: 1 I I ~ ~ B - File No. LH7E-MJ1B SHEET o 1 ~ / SPECIFICATIONS: Current Rating: 3A AMP Dielectric Voltage:500V AC For 1 Minute Contact Resistance:30Mllliohms Max. Insulator Resistance:5000M egohm s Min. lnsulator:PBT+30% Glass Filled UL 9 4 V —0,Color:Black

Contextual Info: LF PA K 33 PSMN2R4-30MLD N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 18 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers

Contextual Info: PA K 33 PSMN013-30MLC LF N-channel 30 V 13.5 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 3 — 7 June 2012 Objective data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is

2.5mm stereo jack SMT

Abstract: stereo jack 2.5mm
Contextual Info: co CO M aterials a n d Finish O 1 0> Housing: LCP reflow compatible , UL 94V-0 Rated 02.60 ''" S 00 O Terminals: Copper Alloy, Gold Flash all over Nickel Plating S 10 CN v10 0> Electrical Characteristics Contact Resistance: 5 Before Test: 30mllllohms Max.

2D430L

Abstract: 2D430
Contextual Info: LF PA K 33 PSMN2R4-30MLD N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 1 October 2013 Objective data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers

Contextual Info: LF PA K 33 PSMN010-30MLD N-channel 30 V, 10 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 10 October 2013 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers

Contextual Info: LF PA K 33 PSMN010-30MLD N-channel 30 V, 10 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 5 November 2013 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers