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    10146514-10030MLF
    Amphenol Communications Solutions PCI Express®x1 vertical Card Edge Connector, 36 Positions, 1mm (0.039inch) Pitch PDF
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    Panasonic Electronic Components 6TPE330ML

    CAP TANT POLY 330UF 6.3V 2917
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    DigiKey () 6TPE330ML Digi-Reel 31,855 1
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    6TPE330ML Cut Tape 31,855 1
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    6TPE330ML Tape & Reel 30,000 2,500
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    Mouser Electronics 6TPE330ML 3,042
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    Newark 6TPE330ML Cut Tape 2 1
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    RS 6TPE330ML Bulk 2,500
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    TME 6TPE330ML 1,250
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    Ameya Holding Limited 6TPE330ML 2,500
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    Avnet Asia 6TPE330ML 24 Weeks 2,500
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    Master Electronics 6TPE330ML 2,500
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    Panasonic Electronic Components 6TPB330ML

    CAP TANT POLY 330UF 6.3V 2917
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    DigiKey () 6TPB330ML Cut Tape 5,634 1
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    6TPB330ML Digi-Reel 5,634 1
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    6TPB330ML Tape & Reel 2,500 2,500
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    Avnet Americas 6TPB330ML Tape & Reel 36 Weeks 2,500
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    TME 6TPB330ML 1,250
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    Master Electronics 6TPB330ML
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    Littelfuse Inc V30MLA0805LNHAUTO

    VARISTOR 41.5V 30A 0805
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    DigiKey () V30MLA0805LNHAUTO Cut Tape 4,242 1
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    V30MLA0805LNHAUTO Digi-Reel 4,242 1
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    V30MLA0805LNHAUTO Tape & Reel 2,500 2,500
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    Sager V30MLA0805LNHAUTO 2,500
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    Panasonic Electronic Components 6TCE330ML

    CAP TANT POLY 330UF 6.3V 2917
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    DigiKey () 6TCE330ML Digi-Reel 2,482 1
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    6TCE330ML Cut Tape 2,482 1
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    Avnet Americas 6TCE330ML Tape & Reel 32 Weeks 2,500
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    Mouser Electronics 6TCE330ML 2,176
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    Master Electronics 6TCE330ML
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    Panasonic Electronic Components 4TCF330ML

    CAP TANT POLY 330UF 4V 2917
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    DigiKey 4TCF330ML Cut Tape 2,148 1
    • 1 $3.15
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    Avnet Americas 4TCF330ML Tape & Reel 32 Weeks 2,500
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    Master Electronics 4TCF330ML
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    30ML Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 1 I IB : I File No. LH7E-MJ1B I SHEET 1 o ~ / SPECIFICATIONS: Current Rating: 3A AMP Dielectric Voltage:500V AC For 1 Minute Contact Resistance:30Mllliohm s Max. Insulator Resistance:5000M egohm s Min. lnsulator:PBT+30% Glass Filled UL 94V —0, Contact :Phosphor Bonze Or B rass


    OCR Scan
    30Mllliohm 5000M PDF

    Contextual Info: 1 ~5- I — File No. LH7E-MJ1B-BGB r SHEET 1 / SPECIFICATIONS: Current Rating: 3A AMP Dielectric Voltage:500V AC For 1 Minute C ontact Resistance:30Mllliohms Max. Insulator Resistance:5000Megohms Min. lnsulator:PBT+30% Glass Riled UL 94V—0 C ontact ¡Phosphor Bonze Or Brass


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    30Mllliohms 5000Megohms PDF

    sot1210

    Abstract: PSMN3R0-30MLC
    Contextual Info: PA K 33 PSMN3R0-30MLC LF N-channel 30 V 3.15 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 2 — 22 May 2012 Objective data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is


    Original
    PSMN3R0-30MLC LFPAK33 sot1210 PSMN3R0-30MLC PDF

    Contextual Info: LF PA K 33 PSMN6R4-30MLD N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 10 October 2013 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


    Original
    PSMN6R4-30MLD LFPAK33 LFPAK33 PDF

    Contextual Info: LF PA K 33 PSMN2R4-30MLD N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 7 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


    Original
    PSMN2R4-30MLD LFPAK33 LFPAK33 PDF

    Contextual Info: LF PA K 33 PSMN7R5-30MLD N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 12 March 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


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    PSMN7R5-30MLD LFPAK33 LFPAK33 PDF

    2.5mm stereo jack SMT

    Abstract: stereo jack 2.5mm
    Contextual Info: co co o 1 02.60 Materials and Finish Housing: LCP reflow compatible , UL 94V-0 Rated CO o s Terminals: Copper Alloy, Gold Flash all over Nickel Plating 10 c\i Tm 0> Electrical Characteristics 8 Contact Resistance: Before Test: 30mllliohms Max. After Durability Test:


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    30milllohms 2002/95/EC LR78160 STX-2550-4NTR 2.5mm stereo jack SMT stereo jack 2.5mm PDF

    Contextual Info: LF PA K 33 PSMN6R4-30MLD N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 5 November 2013 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


    Original
    PSMN6R4-30MLD LFPAK33 LFPAK33 PDF

    Contextual Info: LF PA K 33 PSMN6R5-30MLD N-channel 30 V, 6.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 10 October 2013 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


    Original
    PSMN6R5-30MLD LFPAK33 LFPAK33 PDF

    Contextual Info: PSMN020-30MLC N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using TrenchMOS Technology 4 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and


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    PSMN020-30MLC LFPAK33 PDF

    Contextual Info: LF PA K 33 PSMN6R4-30MLD N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 15 August 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


    Original
    PSMN6R4-30MLD LFPAK33 LFPAK33 PDF

    Contextual Info: LF PA K 33 PSMN6R5-30MLD N-channel 30 V, 6.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 5 November 2013 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


    Original
    PSMN6R5-30MLD LFPAK33 LFPAK33 PDF

    7d530l

    Contextual Info: LF PA K 33 PSMN7R5-30MLD N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 1 October 2013 Objective data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


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    PSMN7R5-30MLD LFPAK33 LFPAK33 7d530l PDF

    Contextual Info: LF PA K 33 PSMN4R2-30MLD N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 1 October 2013 Objective data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


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    PSMN4R2-30MLD LFPAK33 LFPAK33 PDF

    Contextual Info: PA K 33 PSMN013-30MLC LF N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 4 — 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is


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    PSMN013-30MLC LFPAK33 PDF

    Contextual Info: PA K 33 PSMN4R4-30MLC LF N-channel 30 V 4.65 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 3 — 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is


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    PSMN4R4-30MLC LFPAK33 PDF

    Contextual Info: 1 I IB : I File No. LH7E-MJ1B I SHEET 1 o ~ / SPECIFICATIONS: Current Rating: 3A AMP Dielectric Voltage:500V AC For 1 Minute Contact Resistance:30Mllliohm s Max. Insulator Resistance:5000M egohm s Min. lnsulator:PBT+30% Glass Filled UL 94V —0, Contact :Phosphor Bonze Or B rass


    OCR Scan
    30Mllliohm 5000M PDF

    Contextual Info: 1 I I ~ ~ B - File No. LH7E-MJ1B SHEET o 1 ~ / SPECIFICATIONS: Current Rating: 3A AMP Dielectric Voltage:500V AC For 1 Minute Contact Resistance:30Mllliohms Max. Insulator Resistance:5000M egohm s Min. lnsulator:PBT+30% Glass Filled UL 9 4 V —0,Color:Black


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    30Mllliohms 5000M PDF

    Contextual Info: LF PA K 33 PSMN2R4-30MLD N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 18 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


    Original
    PSMN2R4-30MLD LFPAK33 LFPAK33 PDF

    Contextual Info: PA K 33 PSMN013-30MLC LF N-channel 30 V 13.5 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 3 — 7 June 2012 Objective data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is


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    PSMN013-30MLC LFPAK33 PDF

    2.5mm stereo jack SMT

    Abstract: stereo jack 2.5mm
    Contextual Info: co CO M aterials a n d Finish O 1 0> Housing: LCP reflow compatible , UL 94V-0 Rated 02.60 ''" S 00 O Terminals: Copper Alloy, Gold Flash all over Nickel Plating S 10 CN v10 0> Electrical Characteristics Contact Resistance: 5 Before Test: 30mllllohms Max.


    OCR Scan
    30milliohms 2002/95/EC LR78160 STX-2550-3NMTR 2.5mm stereo jack SMT stereo jack 2.5mm PDF

    2D430L

    Abstract: 2D430
    Contextual Info: LF PA K 33 PSMN2R4-30MLD N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 1 October 2013 Objective data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


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    PSMN2R4-30MLD LFPAK33 LFPAK33 2D430L 2D430 PDF

    Contextual Info: LF PA K 33 PSMN010-30MLD N-channel 30 V, 10 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 10 October 2013 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


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    PSMN010-30MLD LFPAK33 PDF

    Contextual Info: LF PA K 33 PSMN010-30MLD N-channel 30 V, 10 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 5 November 2013 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


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    PSMN010-30MLD LFPAK33 PDF