30L10 Search Results

30L60CT

Abstract: 30L100CT 30l45ct
Contextual Info: MBR30L45CT - 30L100CT creat by art Pb 30.0Amps Low VF Schottky Barrier Rectifiers TO-220AB RoHS COMPLIANCE Features — Low power loss, high efficiency — High current capability, low forward voltage drop — Plastic material used carriers Underwriters Laboratory Classification 94V-0

30L45CT

Abstract: 30L100CT 30L60CT 30L45 30L10 30L100 30L45C
Contextual Info: MBR30L45CT - 30L100CT creat by art 30.0AMPS Low VF Schottky Barrier Rectifiers TO-220AB Features — Low power loss, high efficiency — High current capability, low forward voltage drop — Plastic material used carriers Underwriters Laboratory Classification 94V-0

cy7c9101

Contextual Info: CY7C9101 ss CYPRESS SEMICONDUCTOR Features CMOS 16-Bit Slice • Infinitely expandable in 16-bit incre­ ments • F ast • Four status flags: carry, overflow, neg­ ative, zero — CY7C9101—30 has a 30-ns max. clock cycle (commercial) — CY7C9101—35 has a 3 5 -n s (max.)

30L100CT

Abstract: 30L45 30L45CT 30L60CT-100CT 30L60CT
Contextual Info: MBR30L45CT - 30L100CT creat by art Pb 30.0AMPS Low VF Schottky Barrier Rectifiers TO-220AB RoHS COMPLIANCE Features — Low power loss, high efficiency — High current capability, low forward voltage drop — Plastic material used carriers Underwriters Laboratory Classification 94V-0

30L100CT

Abstract: 30L45 30L100 30L45CT
Contextual Info: MBR30L45CT - 30L100CT creat by art 30.0AMPS Low VF Schottky Barrier Rectifiers TO-220AB Features — Low power loss, high efficiency — High current capability, low forward voltage drop — Plastic material used carriers Underwriters Laboratory Classification 94V-0

30L100CT

Contextual Info: MBR30L45CT thru 30L100CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

Schottky

Contextual Info: MBR30L45CT thru 30L100CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

CY7C9101

Abstract: cy7c9101-30jc CY7C9101-30GC 7c9101 CY7C9101-40JC CY7C9101-30 CY7C910 CY7C245 CY7C9101-35 CY7C9101-40PC
Contextual Info: CY7C9101 CYPRESS SEMICONDUCTOR Features CMOS 16-Bit Slice • Infinitely expandable in 16-bit incre­ ments • Four status flags: carry, overflow, neg­ ative, zero • Capable o f withstanding greater than 2001V static discharge voltage • Pin compatible and functional equiva­

30L45CT

Abstract: 30L60CT 30L100CT 30L100 MBR30L100CT 30L60
Contextual Info: MBR30L45CT - 30L100CT creat by art Pb 30.0AMPS Low VF Schottky Barrier Rectifiers TO-220AB RoHS COMPLIANCE Features — UL Recognized File # E-326243 — Low power loss, high efficiency — High current capability, low forward voltage drop — Plastic material used carriers Underwriters

30L100CT

Contextual Info: MBR30L45CT - 30L100CT 30.0AMPS Low VF Schottky Barrier Rectifiers TO-220AB Features ­ Low power loss, high efficiency ­ High current capability, low forward voltage drop ­ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ­

Contextual Info: MBR30L45CT - 30L100CT creat by art 30.0AMPS Low VF Schottky Barrier Rectifiers TO-220AB Features — Low power loss, high efficiency — High current capability, low forward voltage drop — Plastic material used carriers Underwriters Laboratory Classification 94V-0

30L45CT

Abstract: 30L60CT
Contextual Info: MBR30L45CT thru 30L100CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

mylar capacitor 154

Abstract: gk-16 104 mylar capacitor datasheet 6-876 6-877
Contextual Info: +105°C Low ESR Miniature Axial Lead, Aluminum Capacitors Features• • • +105°C, Long Life Low ESR/CV Performance Meeting or Exceeding Radial Leaded Devices General SpecificationsOperating Temperature: -40 to +105°C Voltage Range: 6.3 – 200 VDC Capacitance Range: