30CVS Search Results

IRLZ20

Abstract: IRLZ24 DIODE S3V 08 S3V 8* Rectifier DIODE S3V J50 mosfet DIODE S3V 40 S3V 15 diode
Contextual Info: N-CHANNEL LOGIC LEVEL MOSFET IRLZ24/20 FEATURES • • • • • • • • Lower R d s o n Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

692B

Abstract: 694B ZTX690B
Contextual Info: NPN Silicon Planar Medium Power High Gain Transistors ZTX689B ZTX690B ZTX692B ZTX694B PRELIMINARY INFORMATION FEATURES • • • • • • High gain — 500 min. Up to 3 am ps continuous current Gain specified up to 6 amps 1.5 w att pow er dissipation at

Contextual Info: SAMSUNG ELECTRONICS INC bME D • T T b H m S 0012310 Mbfl ■ SMGK N-CHANNEL POWER MOSFETS IRFP254/255 FEATURES • • • • • • » Lower R d s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

PPR1356

Abstract: PPR1357 PPR1358 PPR1359 voltage regulators 300v dc max ppc products corp
Contextual Info: P P C PRO] PRODUCTS CORP CHJ bDE D b fis b n i n s qoqotms « ppc High Efficiency, 30A Center-Tap Diodes PPR1356 PPR1357 PPR1358 PPR1359 FEATURES ABSOLUTE MAXIMUM RATINGS • Very Low Forward Voltage Peak Inverse Voltage, PPR1356 200V • Very Fast Switching Speed

IC-25

Contextual Info: Æ utran PRODUCT DEVICES.INC. CATALO' ULTRA FAST RECOVERY RECTIFIERS 500V, 6A, 35ns MAXIMUM RATINGS PER DIODE PARAMETER SYMBOL UNITS WORKING PEAK VRRM REVERSE VOLTAGE AVERAGE FORWARD CURRENT IF AV PEAK ONE CYCLE NON-REPETITIVE. SURGE CURRRENT IFSM PEAK REPETITIVE

EB 13007

Abstract: p 13007 13007 T 13007 W 13007 TRANSISTOR E 13007 NPN Transistor 13007
Contextual Info: KSE13006/13007 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION TO-220 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector Base Voltage : KSE13006 : KSE13007

Contextual Info: Ti7DS7fl GGa?ÔÔS 4TT bOE D ZETEX S E M I C O N D U C T O R S P-channel enhancement mode vertical DMOS FET ZVP0120 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance