30AUG04 Search Results
30AUG04 Datasheets Context Search
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Contextual Info: Jr 4 "TTB TK R U irB TIiK iH B B r" COPffBOHT 1904 I KLfiUEb HA HiBU&MtM-J- all wuHia uyrasesr LOC ES B f TYCO ELECTHOMCS CORPORATION. K OBT / REVISIONS LTR A A DEsaamcN DM T w r OKIE RELEASE F JB O -0884-04 R.H I.E 30Aug04 MATERIAL HOUSING: GLASS RLLED NYLON 6T |
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30aug04jqfaq0431mr2000prolecta\b057704-fh+1 | |
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Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AD REVISIONS DIST 00 LTR DESCRIPTION DATE REVISED PER EC 0S12-0213-05 0.97 +0.03 -0.00 2.00 -P- rz • njn-Lgj m j r=n Lgj p rm rm rm rm rm rm rm rm nsn q p |
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0s12-0213-05d5138lcp00013jul05+1 | |
Y1100
Abstract: TLMB1100 TLMG1100 TLMO1100 TLMP1100 TLMS1100 TLMY1100
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y110008-apr-05tlmb1100tlmg1100+4 | |
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Contextual Info: TLHB540. Vishay Semiconductors High Efficiency Blue LED, ∅ 5 mm Tinted Diffused Package FEATURES • • • • • • • • 19223 DESCRIPTION This device has been redesigned in 1998 replacing SiC by GaN technology to meet the increasing demand for high efficiency blue LEDs. |
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tlhb54008-apr-05 | |
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Contextual Info: BAQ33 / 34 / 35 Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current Features • Silicon Planar Diodes • Very low reverse current Applications Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers 94 9371 |
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baq33od-80baq34baq35+5 | |
10-SPROCKETContextual Info: Tape Information Vishay Siliconix MICRO FOOTr 5x2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Si8900EDB-T2 4.000.10 4.000.10 +0.10 1.50 -0.00 A 2.000.05 B 1.75 0.10 B 5.50 0.05 12.0 +0.30 -0.10 SECTION A-A A SECTION B-B NOTES: 1. 10-sprocket hole pitch cumulative tolerance 0.2. |
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275-mmsi8900edb-t210-sprocket93-5211-x+3 | |
DIN 18541
Abstract: Opto Coupler TLP 621 ic 741 clamper LM 10841 IEC 60061-1 TLHY46 smd glass zener diode color codes TDC 310 NTC an 17807 a Opto Coupler TLP 521
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vhn-db2101-0409din 18541opto coupler tlp 621ic 741 clamper+7 | |
TLHB580
Abstract: TLHB5800 TLHB5802
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tlhb580d-7402530-aug-04tlhb5800+1 | |
Si8401DB-T1
Abstract: Si8402DB-T1 Si8405DB-T1 Si8411DB-T1
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275-mmsi8401db-t1si8402db-t1si8405db-t1+4 | |
TLHB510
Abstract: TLHB5100 TLHB5102 D-466
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tlhb51008-apr-05tlhb5100tlhb5102+1 | |
TLDR4900
Abstract: TLDR4901
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tldr490d-7402530-aug-04tldr4900+1 | |
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Contextual Info: TLDR5400 VISHAY Vishay Semiconductors High Intensity LED, ∅ 5 mm Tinted Diffused Description This LED contains the double heterojunction DH GaAlAs on GaAs technology. This deep red LED can be utilized over a wide range of drive current. It can be DC or pulse driven to |
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tldr5400d-7402530-aug-04 | |
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Contextual Info: BFR181T / BFR181TW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 1 • Low noise figure • High power gain Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. 3 2 1 Mechanical Data |
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bfr181tbfr181twot-23ot-323+2 | |
ac 1084 0515Contextual Info: BFP93A / BFP93AW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 2 1 • High power gain • Low noise figure • High transition frequency SOT-143 3 4 Applications RF amplifier up to GHz range. 2 1 SOT-343 Mechanical Data Typ: BFP93A |
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bfp93abfp93awot-143ot-343+3 | |
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Contextual Info: TLHB440. VISHAY Vishay Semiconductors High Efficiency Blue LED, ∅ 3 mm Tinted Diffused Package Description This device has been redesigned in 1998 replacing SiC by GaN technology to meet the increasing demand for high efficiency blue LEDs. It is housed in a 3 mm tinted diffused plastic package. |
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tlhb440d-7402530-aug-04 | |
Z-PACK FB
Abstract: 5536504-9 D300 D5138 5536504-1 MARKING
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28mar1d5138z-pack fb5536504-9+2 | |
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Contextual Info: BFR280T / BFR280TW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 1 • Low power applications • Low noise figure • High transition frequency 3 2 Applications 1 For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. |
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bfr280tbfr280twot-23ot-323+2 | |
BFR92AFContextual Info: BFR92AF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 1 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous |
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bfr92afot-490d-7402530-aug-04 | |
BFR183TFContextual Info: BFR183TF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous |
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bfr183tfot-490d-7402530-aug-04 | |
BF995Contextual Info: BF995 VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance 4 3 |
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bf995ot-143d-7402530-aug-04 | |
TLHB540
Abstract: TLHB5400 TLHB5401
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tlhb54008-apr-05tlhb5400tlhb5401 | |
4425b
Abstract: V30114-T1 vishay siliconix code marking to-220 marking code 20L sot-23 sot23 to252 footprint wave soldering siliconix an808
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si4421dy12-dec-03an82620-jun-03+6 | |
V30114
Abstract: T0445 Si9730
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si9730x1011p901011-feb-05+2 | |
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Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AD 00 R E VIS IO N S LTR DESCRIPTION B1 0.03 0.97 + 0.00 - -P- D ran ran ran ranran ran ran ran ran ran ran o ran ran ran |
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d5138ceod2030aug0431mar2000+2 | |