30A 44 ZENER DIODE Search Results

gate to drain clamp

Abstract: 30A 44 zener diode gate-drain zener AOT500 8017M
Contextual Info: AOT500 N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.

250HMA

Contextual Info: AOT500L N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.

AOT500

Abstract: gate to drain clamp
Contextual Info: AOT500 N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.

AOT500

Abstract: gate to drain clamp
Contextual Info: AOT500L N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.

33a zener

Contextual Info: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF

zener 4c3

Abstract: zener gdz zener gdz marking
Contextual Info: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES VOLTAGE 2.0 to 56 Volts POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)

zener 6c2

Abstract: zener 4c3 zener 5c1 marking code 6C8 zener 9A1 zener 9c1 zener 5B6 DIODES 33D 6c2 zener 4C3 zener
Contextual Info: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES VOLTAGE 2.0 to 56 Volts POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)

GLZ56

Abstract: zener diodes 5.1a 33b 56
Contextual Info: GLZ2.0~GLZ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6) .055(1.4)DIA. • In compliance with EU RoHS 2002/95/EC directives

zener 4c3

Abstract: zener 5c1 ZENER CODE 51b zener 2a7 4C7 marking code zener 10D zener 4B7 20D22A DIODES 33D marking code 6C8
Contextual Info: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF

marking code 6C8

Abstract: zener 5A1 zener 10D zener 5c1 zener 9c1 DIODES 33D Marking 4c7 4C7 marking code zener 4c3
Contextual Info: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF

Contextual Info: Z2SMB6.8 . Z2SMB200 2 W Z2SMB6.8 . Z2SMB200 (2 W) Surface Mount Silicon-Zener Diodes Si-Zener-Dioden für die Oberflächenmontage Version 2013-05-23 Maximum power dissipation Maximale Verlustleistung ± 0.5 2.2± 0.2 2.1± 0.1 5.4 0.15 Type Typ Nominal Z-voltage

BAI59

Abstract: B40 35-10 IN5345B Diodes In4007 HVR062 IN4007F RF2007 B40C3700-2200 b40c2000 rf2001
Contextual Info: FAGOR ^ NUMERICAL INDEX TRANSIENT VOLTAGE SUPPRESSOR DIODES RECTIFIER DIODES Plastic Case IN4007F. 1N4001F. IN4007 . 1N4001 . P513 . BY 133 . 1N5399 . 1N5391 . RF2007 . RF2001 . BY255 .

Contextual Info: AOT502 Clamped N-Channel MOSFET General Description Product Summary AOT502 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.

AOT502

Abstract: gate-drain zener 50E05 102-AX
Contextual Info: AOT502 Clamped N-Channel MOSFET General Description Product Summary AOT502 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.

zener gdz

Contextual Info: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES VOLTAGE 2.0 to 56 Volts POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)

6b2 zener

Abstract: Marking 4c7 Tube 5A6 DIODES 33D
Contextual Info: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF

Contextual Info: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA • Case: Molded Glass MINI-MELF

zener gdz marking

Contextual Info: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES 2 to 56 Volt VOLTAGE POWER 500 mWatt FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU directives MECHANICAL DATA

SMZ-75

Abstract: DO-213AB SMZ10 SMZ11 SMZ12 SMZ13 SMZ15 SMZ16 SMZ200
Contextual Info: SMZ1 . SMZ200 2 W SMZ1 . SMZ200 (2 W) Surface Mount Silicon-Zener Diodes (non-planar technology) Flächendiffundierte Si-Zener-Dioden für die Oberflächenmontage Version 2011-10-17 Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage

SMZ5.6

Contextual Info: SMZ1 . SMZ200 2 W SMZ1 . SMZ200 (2 W) Surface Mount Silicon-Zener Diodes (non-planar technology) Flächendiffundierte Si-Zener-Dioden für die Oberflächenmontage Version 2012-04-02 Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage

Contextual Info: ZPY1 . ZPY200 1.3 W ZPY1 . ZPY200 (1.3 W) Silicon-Power-Zener Diodes (non-planar technology) Silizium-Leistungs-Zener-Dioden (flächendiffundierte Dioden) Version 2014-06-30 Maximum power dissipation Maximale Verlustleistung ±0.1 5.1 -0.1 Type +0.5

Contextual Info: ZPY1 . ZPY200 1.3 W ZPY1 . ZPY200 (1.3 W) Silicon-Power-Zener Diodes (non-planar technology) Silizium-Leistungs-Zener-Dioden (flächendiffundierte Dioden) Version 2013-01-29 Maximum power dissipation Maximale Verlustleistung ±0.1 5.1 -0.1 Type +0.5

STE70NM50

Contextual Info: STE70NM50 N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET TYPE STE70NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 70 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

zener 400v

Contextual Info: STE70NM50 N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET TYPE STE70NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 70 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE