3092 REG Search Results

Contextual Info:
 SENSITRON SEMICONDUCTOR
Technical Data Data Sheet 3092, Rev.
    


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TH3092

Abstract: SO24-2
Contextual Info: IDT74FCT3827A/B 3.3V CMOS 10-BIT BUFFERS Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 • Extended commercial range of -40°C to +85°C

LT3470A

Contextual Info: LT3092 200mA 2-Terminal Programmable Current Source FEATURES n n n n n n n n n n n DESCRIPTION Programmable 2-Terminal Current Source Maximum Output Current: 200mA Wide Input Voltage Range: 1.2V to 40V Input/Output Capacitors Not Required Resistor Ratio Sets Output Current

lt3092

Abstract: lt3080-1 LFJD LT3092EST RX10A lt 3092 LT3092EDD LT3092IST piezoelectric driver 100khz NEC PS
Contextual Info: LT3092 200mA 2-Terminal Programmable Current Source FEATURES DESCRIPTION n The LT 3092 is a programmable 2-terminal current source. It requires only two resistors to set an output current between 0.5mA and 200mA. A multitude of analog techniques lend themselves to actively programming the

Contextual Info: IDT54/74FCT3827A/B 3.3V CMOS 10-BIT BUFFERS Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 • 25 mil Center SSOP Packages

Contextual Info: 3.3V CM OS 10-BIT BUFFERS IDT54/74FCT3827A/B Integrated D evice Technology, Inc. FEATURES: DESCRIPTION: • 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, Ft = 0 • 25 mil Center SSOP Packages

Contextual Info: 3.3V CMOS 10-BIT BUFFERS IDT54/74FCT3827/A IDT54/74FCT3828/A PRODUCT PREVIEW Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 0.5 MICRON CMOS Technology • ESD > 2000V per M IL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0

Contextual Info: 3.3V CMOS 10-BIT BUFFERS IDT54/74FCT3827A/B Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 • 25 mil Center SSOP Packages

iso 14014

Abstract: ADF4153 KJ1367
Contextual Info: Frequency Synthesizer 50Ω SSN-3132A-119+ 2932 to 3132 MHz The Big Deal • Fractional N synthesizer • Low phase noise and spurious • Very small size 0.60" x 0.60" x 0.138" CASE STYLE: KJ1367 Product Overview The SSN-3132A-119+ is a Frequency Synthesizer, designed to operate from 2932 to 3132

RTD linearity sensitivity

Contextual Info: P2P- Wireless Input Node The P2P- Wireless Input Node is part of the Define Instruments Twin Link point-to-point system. It offers an ideal starting point for wireless transmission of a range of digital and analogue input signals. › 2x Isolated Universal Inputs Thermocouple, RTD, mA, V, mV,

multos infineon

Abstract: SIEMENS CORP plc siemens 8047 hotel 6676
Contextual Info: to: +44 0 171 351 7633 for a fast response simply complete the details below and return For more information on any of the products featured in this issue of advance, or any other information you may require, complete the form below and send the faxback to our response centre. Or contact the Infineon

Q62702-P180

Abstract: Q62702-P998 Q62702-P1000 Q62702-P174 Q62702-P176 Q62702-P178 Q62702-P859 Q62702-P941 Q62702-P997 Q62702-P999
Contextual Info: SFH 309 SFH 309 FA SFH 309 SFH 309 FA feof6653 feo06653 NPN-Silizium-Fototransistor Silicon NPN Phototransistor Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale Features ● Speziell geeignet für Anwendungen im

Contextual Info: Process Recorders OMEGA SM CARE Extended Warranty Program Model RD1450 1340 $ Basic Unit ߜ 100 mm 4" Chart Width ߜ 1 to 6 Traces on a Common Time Base ߜ Clear Message Display and Text Prompts ߜ Rugged Design with IP65 Protection ߜ Transmitter Power

sfh siemens

Abstract: npn phototransistor sfh 309 380nm SFH 309
Contextual Info: SIEMENS NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter SFH 309 SFH 309 F Area not flat 4,5t-” Collector Transistor Cathode (Diode) 'Chip position

Contextual Info: IN TERN AT IO NA L RECTIFIER 4855452 SS Ïm F J MflS54S2 000405^ fc. INTERNATIONAL RECTIFIER 55C 0 4 8 2 9 D Data Sheet No. PD-3.083 IOR I N T E R N A T I O N A L RECTIFIER T - a s v n SN 3091 SERIES < 110 A m p Major Ratings and Characteristics 2N3091-98

BSAM

Abstract: NME0505
Contextual Info: NME S eries Isolated 1W Single Output f^J Input/Output isolation 1OOOVDC O Schematics Dual-ln-Line Package top view ov Low profile C J High efficiency up to 8 0 % O □ +v 7 DIP, S IP and surface m ount styles 3.3V, 5V, 12V, 24V and 4 8 V input Pin com patible with LME series

Contextual Info: Numerical Index ADVANCED INTERCONNECTIONS 5 Energy Way, P.O. Box 1342, West Warwick, Rl 02893 • Tel. 401-823-5200 • FAX 401-823-8723 * TWX 9102403454 EMC Part # 2003 2009 2013 2014 2019 2020 2034 2037 2039 2045 2046 2047 2048 2049 2050 2055 2056 2076

61638

Contextual Info: Numerical Index advanced INTERCONNECTIONS 5 Energy Way, P.O. Box 1342, West Warwick, Rl 02893 • Tel. 401 -823-5200 • FAX 401 ^823-8723 • TWX 9102403454 EMC Part # 2003 2009 2013 2014 2019 2020 2034 2037 2039 2045 2046 2047 2048 2049 2050 2055 2056 2076

uis test

Abstract: B3030CTL B3030CT
Contextual Info: MBRB3030CTL SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state-of-the-art devices have the following features: Features: http://onsemi.com • Dual Diode Construction • • • • • May be Paralleled for Higher Current Output

Contextual Info: Data sheet DS/RVG200–EN Rev. C ScreenMaster RVG200 Paperless recorder Measurement made easy Secure process data at your fingertips High security data recording — encrypted data storage compliant to 21 CFR Part 11 — up to 2 GB of internal memory Complete data recording solution

C92-95

Contextual Info: 20 19 18 17 15 I 16 14 12 1 3 10 1 1 8 9 7 I 6 4 5 SYMBOL D E F IN IT IO N 2X CEE 3 .8 5 CED CUD 17X 2 . 5 4 ±0 140-143 ) 4X R 4 2X 4 . 0 5 GOD 4 3 .9 6 THE NUMBER INSIDE THE SYMBOL ( ) CORRESPONDS TO THE NUMBER ON THE INSPECTION REPORT FOR THIS DRAWING/PART NUMBER

Contextual Info: MBRB3030CTLG, NRVBB3030CTLG SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a proprietary barrier metal. Features •         Dual Diode Construction, May be Paralleled for Higher Current Output

crc type thermocouple

Abstract: 409F sensor 40af 409AH B6000 ELC-TC04ANNN 5011633102-TE02 api 662 R type thermocouple
Contextual Info: IL05003009E.pdf 2006-03-22 Storage: -25℃~70℃ temperature , 5~95% (humidity) 1.3 External wiring UL508 Note 1: Use only the wires that are supplied with your thermocouple sensor. ELC terminal screws should be tightened to 1.95 kg-cm (1.7 lb-in). Thermocouple

Contextual Info: MBRB3030CTL SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state−of−the−art devices have the following features: Features: • Dual Diode Construction − • • • • • http://onsemi.com