3080 DIODE Search Results

CA 3080 E

Abstract: TXV-3080 3080 diode TXB-3080
Contextual Info: HEWLETT-PACKARD^ C M PN TS EGE D 444 7 5Ô 4 0 0 0 S 7 7 3 fl H IG H R E L IA B IL IT Y fT L J Ì H E W L E T T ti!K J P A C K A R D P IN A T T E N U A T O R D IO D E S Generic 5082-3080 TX-3080 TXB-3080 TXV-3080 TXVB-3080 T '0 * 7 -l£ ?. .

1N5 diode

Abstract: 1N57xx 1N5712 1N5719 1N5767 RS-296-D 5082-XXXX
Contextual Info: Products > RF ICs/Discretes > PIN Diodes > Axial Glass Packaged > 5082-3080 5082-3080 axial lead glass packaged PIN diodes Description Lifecycle status: Active Features The 5082-3xxx series of current controlled PIN diodes are specified for use in control

NJS6928

Abstract: NJS6930
Contextual Info: V'ÎÎ7n;J$SH'7|Microwave Diode Limiters Type NJS6130 NJS6312A NJS6301 NJS6303A NJS6503A *5 A #* 7 - y u -'> 3 > It« * [ Frequency (MHz Insertion Loss (dB m ax.) Isolation (dB min.) Handling Power Max. Rating (W m ax.) 1200-1400 3000-3100 3020-3080 3020-3080

diode 5082-3080

Abstract: 5082-3080 3080 diode
Contextual Info: 5082-3080 SILICON PIN DIODE PACKAGE STYLE 15 DESCRIPTION: The ASI 5082-3080 PIN Diode is Designed for Low Power RF Switching and Attenuating Applications. MAXIMUM RATINGS I 250 mA V 100 V PDISS 250 mW @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +150 °C

Contextual Info: 5082-3080 SILICON PIN DIODE PACKAGE STYLE 01 DESCRIPTION: The ASI 5082-3080 PIN Diode is Designed for Low Power RF Switching and Attenuating Applications. MAXIMUM RATINGS I 250 mA V 100 V PDISS 250 mW @ TC = 25 OC CHARACTERISTICS SYMBOL TC = 25 OC TEST CONDITIONS

in5719

Abstract: DIODE T25 5082-XXXX 5082-3001 1N5719 diode 5082-3077 diode 5082- 3039 5082-3080 1N57xx 1Nxx
Contextual Info: Agilent 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Features • Low Harmonic Distortion • Large Dynamic Range Description/Applications These general purpose switching

IN5767

Abstract: 1N5767
Contextual Info: PIN Diodes Reliability Data 1N5767 5082-3080 5082-3188 Description Applications For applications requiring component reliability estimation, Hewlett-Packard provides reliability data for all families of devices. Data is initially compiled from reliability tests run prior to

diode 5082-3077

Abstract: IN5719 1N5767 5082-3039 diode 5082-3080 1N5 diode 1N5719 F 5082 1N5712 RS-296-D
Contextual Info: PIN Diodes for RF Switching and Attenuating Technical Data 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications

1N5767

Abstract: DIODE T25 in5719 1nxxxx diode 1N5712 1N5719 RS-296-D digital phase shifters 1N5 diode 5082-XXXX
Contextual Info: 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Description/Applications These general purpose switch­ing diodes are intended for low power switching applications such as RF ­duplexers,

1N SERIES DIODE

Abstract: 1N5767 diode 5082-3080 1N5957 2000Q 1N5957SERIES unitrode diode iN5957
Contextual Info: PIN DIODE 1N5767 5082 - 3080 SERIES 1N5957 SERIES Features • • • • Useful attenuation from 1 i*Ato 100 mA bias. Capacitance below 0.4 pF. Low distortion in sw itches and attenuators. Rugged Unitrode construction. Description The 1N5767 and 1N5957 PIN diodes are

Contextual Info: Whp\ HEWLETT mL'liâ PACKARD PIN Diodes Reliability Data 1N5767 5082-3080 5082-3168 5082-3188 D escription Applications For applications requiring component reliability estima­ tion, Hewlett-Packard provides reliability data for all families of devices. Data is initially com­

IN5767

Abstract: HP 5082-3081 HPND-4165 EN 4165 5082-3042 1N5719 1N5767 HPND-4166 IN5719 RS-296-D
Contextual Info: PIN DIODES FOR RF SWITCHING AND ATTENUATING 1N5719 IN5767 5082-3001/02 5082-3039 5082-3042/43 5082-3077 5082-3080 5082-3081 5082-3168/88 5082-3379 HPNO-4165/66 Features LOW HARMONIC DISTORTION LARGE DYNAMIC RANGE LOW SERIES RESISTANCE LOW CAPACITANCE LOW TEMPERATURE COEFFICIENT

disadvantages of resistor

Abstract: an 3080 variable resistor 50k DS1859 Laser power supply abstract MAX3740A MAX4245 Schematic of 1K digital potentiometer MD 243 diode
Contextual Info: Maxim > App Notes > Communications Circuits Digital Potentiometers Optoelectronics Keywords: laser, laser power, laser power control, laser control circuit, laser power circuit, power control for laser Aug 24, 2004 APPLICATION NOTE 3080 Accurate Power Control of the MAX3740A Laser Driver

1N5767

Abstract: IN5719 1nxxxx diode 5082-XXXX
Contextual Info: 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Description/Applications Features These general purpose switching diodes are intended for low power switching applications such as RF

5082-3080

Abstract: 1N5767 1N5957SERIES diode 5082-3080 1N5957
Contextual Info: 1N5767 5082-3080 SERIES 1N5957SERIES KEY FEATURES DESCRIPTION Both switch and attenuator applications. The 1N5957 is primarily used as an attenuator PIN diode and is particularly suitable wherever current controlled, wide dynamic range resistance elements are required. The 1N5957 has also been

1N5767

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 U.SA PIN Diodes for RF Switching and Attenuating Technical Data 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features

5082-3077

Abstract: 1N5767 2101 5082-3081 glass 1N5719 HPND-0001 HPND-0002 5082-3039 5082-3188
Contextual Info: RF Non-Surface Mount PIN Diodes Glass Axial Lead, Beam Lead, Chip, Stripline Part Number CT Max. pF 5082-3001 5082-3039 1N5719 5082-3077 5082-3188 5082-3080 1N5767 5082-3379 5082-3081 HPND-0001 HPND-0002 0.25 0.25 0.3 0.3 1 0.4 0.4 0.4 0.4 0.2 0.2 RS Max.

diode 5082-3080

Abstract: 1N5767 5082-3080 1N5957
Contextual Info: PIN DIODE 1N5767 5082 - 3080 SERIES 1N5957 S E R IE S Features • • • • Useful attenuation from 1 i*A to 100 m A bias. Capacitance below 0.4 pF. Low distortion in switches and attenuators. Rugged Microsemi construction. Description The 1N5767 and 1N5957 PIN diodes are

Contextual Info: 5082-3080 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 100 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.2.5 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.4pò Carrier Lifetime (S)1.3u @I(F) (test) (A)50m @I(R) (A) (Test Condition)250m

5SDD31H6000

Contextual Info: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 6000 3080 4840 40x103 1.016 0.175 Rectifier Diode V A A A V mΩ 5SDD 31H6000 PRELIMINARY Doc. No. 5SYA1183-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1

HP 5082-3081

Abstract: diode 5082-3168 HPND-4165 HP 5082-3168 vhf antenna mtbf hp 3042 1N5767 5082-3168 diode 5082-3001 5082-3042
Contextual Info: H E W L E T T P A CK A RD COMPONENTS 5082 3001/02 HPND-4165/66 5082-3039 1N5719 5082-3042/43 5082-3077 5082-3080 (1N5767) 5082-3081 5082-3168/88 PIN DIODES FOR RF SWITCHING AND ATTENUATING Features LOW HARMONIC DISTORTION LARGE DYNAMIC RANGE LOW SERIES RESISTANCE

TFK diode

Abstract: diode tfk TRANSISTOR BC 277 diode s .* tfk tfk 045 TFK 220 transistor bf 244 76 TFK 244 tfk diode 12A3
Contextual Info: 17E D I ÖSSODSb DOOMS'} 3 m k l G G ^ ¡r milFWKSM electronic TFK 3080 D TELEFUNKEN ELECTRONIC C » « tiv « lK h f 0l09* tt [ Preliminary specifications [ NPN Silicon Tripleton Power Transistor T -3 3 ~ 3 r- Applications: • Motor-control 380 V-mains)

diode tfk s 220

Abstract: tfk s 220 diode 12A3 rg4 77 diode tfk s 92 TFK diode tfk 3b tfk transistor Tfk 237 TCA 321
Contextual Info: 17E I I B^SDDRb ODD^bS^ 3 • m ilF iy iim iM electronic Crt*tiv«1«chnolo$tt ALGG i l ? ■ TFK 3080 D TELEFUNKEN ELECTRONIC [ Preliminary specifications [ NPN Silicon Tripleton Power Transistor T-33-3£~ Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)

G4AD26

Abstract: free download led wiring guide G4-DA7 80C196 users manual nokia 1200 circuit diagram rs232 connector pin out wiegand modbus circuit M3476 Wiring Diagram RPM led module 80C196
Contextual Info: M4RTU/M4IO USER’S GUIDE Form 0676-100301—March 2010 43044 Business Park Drive • Temecula • CA 92590-3614 Phone: 800-321-OPTO 6786 or 951-695-3000 Fax: 800-832-OPTO (6786) or 951-695-2712 www.opto22.com Product Support Services 800-TEK-OPTO (835-6786) or 951-695-3080