308-017 RS Search Results

X-band doppler radar module

Abstract: RS-8960 308-017 rs metal detector using 555 timer diagram of gunn diode Gunn Diode at power supply circuit 747 opamp gunn diode radar gunn diode radar module gunn diode x band amplifier
Contextual Info: Issued March 1997 232-2324 Data Pack E/F Doppler module Data Sheet RS stock number 308-017 The RS 8960 is an X-band Doppler radar module intended for indoor applications and designed specifically for detecting movement of a remote target by detecting Doppler-shift in reflected microwave radiation.

RS-8960

Abstract: diagram of gunn diode RS Microwave Company 747 opamp X-band doppler radar module metal detector using 555 timer gunn diode radar module radar gunn diode 308-017 rs s band doppler mixer
Contextual Info: Issued July 1985 003-598 Data Pack E/F Doppler module Data Sheet RS stock number 308-017 The RS 8960 is an X-band Doppler radar module intended for indoor applications and designed specifically for detecting movement of a remote target by detecting Doppler-shift in reflected microwave radiation.

siemens PTC thermistor relay

Abstract: Siemens IEC MOTOR CONTACTOR 3rt1 simocode 3uf5 simocode siemens 3uf 3RT1045 3rb12 3UF500 3rt1 076 DC-13
Contextual Info: SIMOCODE 3UF Motor Management and Control Devices SIMOCODE-DP 3UF5 motor protection and control devices • Technical specifications Shared data of basic unit/expansion unit/ expansion module/operator panel Permissible ambient temperature °C -25 . +60 Permissible storage temperature

MF-200

Abstract: mil-std-202 method 304 MF-100 MF25 1K E192 Series mil-std-202 method 108 MIL-STD-202 METHOD 301 E192 MF-12 MF-25
Contextual Info: PRODUCT BULLETIN MF-SERIES WILLOW TECHNOLOGIES LTD. SHAWLANDS COURT, NEWCHAPEL ROAD LINGFIELD, SURREY, RH7 6BL, ENGLAND Tel. + 44 0 1342 835234 Fax. + 44 (0) 1342 834306 E-mail rob@willow.co.uk Website http://www.willow.co.uk GENERAL PURPOSE METAL FILM RESISTORS

pronic t85 br

Abstract: pronic t85 eaton T85 rotary Switch pronic r13 t85 55 pronic r13 SS510 MST205N MST105D pronic 2GK54-73
Contextual Info: Product Numerical Index NTE Page Type No. No. Description NTE Page Type No. No. Description NTE Page Type No. No. Description 54−001 54−002 54−003 54−004 54−005 1 1 5 5 2 Toggle, SPST, 15A, 125VAC Toggle, SPDT, 15A, 125VAC Toggle, DPDT, 15A, 125VAC

Contextual Info: electronics marketing 800.332.8638 Avnet Microwave Technical Solutions Thin-Film Cascadable Amplifier 10 to 1000 MHz Technical Data UTM-1056 Features Description Pin Configuration • Frequency Range: 10 to 1000 MHz The UTM-1056 contains three monolithic microwave integrated

MALLORY CAPACITORS cgs

Abstract: MALLORY TYPE CGS S85IU CGS402T200W4C 24U02 CGS35IT450R5C si93 CGS302U025 CGS102T350V4C cgs822u035r3c
Contextual Info: Type CGS • MallorY Computer Grade Capacitors GENERAL SPECIFICATIONS DC Leakage C urrent: I = .006 V C V after 30 minutes Not to exceed 6mA C = Capacitance in V = Rated Voltage I = Leakage Current in mA ■ High CV Product ■ Screw Terminals ■ Suitable for use in most

AN1081S

Abstract: AN1081 1081S AN6583
Contextual Info: Panasonic Operational Amplifiers A N 1081, AN1081S, A N 6583 Single J-FET Input Operational Amplifiers • Overview The AN1081, the AN1081S and the AN6583 are single operational amplifiers with input stages consisiting of Pch J-FET adopting the ion implantation process, realizing

DESC 87106

Contextual Info: Metuchen C “We Offer Quick Solutions to Noise Pollution” 1-800-679-0516 1-800-679-9959 www.metcaps.c Sw itchm ode Pow er Supply C a p a cito rs S M P S D S C C Dwg. 87106 E — Code Dim A M axi/ Dim B Max 3/ 1 2 3 4 5 6 .650 .650 .650 .650 .650 .650

90041-AS

Abstract: ATI Lead Free reflow soldering profile BGA 90023-AS 90022-AS LCD 90026 540-99-044-24-000 111-93-308-41-001 540-99-084-24-000-1 IP0002 41013 mounting clip dimensions
Contextual Info: Staying tough at the top When it comes to professional connecting devices with machined precision contacts read: ICsockets, PCB connectors and allied products you can consider Preci-Dip as one of the top addresses in the world. Preci-Dip's skill and manufacturing experience,

awm STYLE 2919 COMPUTER CABLE 30V

Abstract: nec 8772 P awm 2464 vw-1 80c 300v awm 2919 vw-1 awm STYLE 2919 COMPUTER CABLE 30V vw-1 awg 2464 28 awg 80 c 300v vw-1 AWM 2919 VW-1 30V Belden AWM 2464 80c 300v nec 8772 AWM VW-1 30V
Contextual Info: 4.1 Multi-Conductor Cables Table of Contents 4 Multi-Conductor Cables Page No. Introduction 4.2 Selection Guide: Shielded Computer Cables for RS-232 Applications 4.2 Unshielded 4.3–4.9 Audio, Control and Instrumentation Cables 4.3 22 AWG Non-Plenum & Plenum

radiall 125 413 000 connector

Abstract: Radiall R125 072 000 R210153000 Radiall SMC R112 005 Radiall R161 220 000 Radiall SMC R112 005 000 ASSEMBLY INSTRUCTIONS Radiall R161 238 000 Radiall SMC R112 165 000 SMC Series R112 005 000 SMB r114.003
Contextual Info: RS 547-736 RS 547-726 RS 547-720 RS 547-710 MMS/MMT MMCX CONTENTS PAGE MMS/MMT Introduction. 4 General. 5

Contextual Info: AirBorn R M 6 3 2 - 2 5 2 - 1 9 2 -9 5 0 1 - 9 8 5 THE CONNECTOR COMPANY • ROW Daughterboard to Motherboard or Chassis . 075 " RM6 R M 6 4 2 - 2 5 2 - 8 1 2 -9 6 0 1 162 thru 402 Contacts .550 — I .5 5 0 I— POSITION # 1 ^ — .4 8 6 |^—/ — POSITION #1

2y27

Abstract: airborn connector RM
Contextual Info: AirBorn R M 452-16 4 -3 1 2 -9 5 0 1 THE CONNECTOR COMPANY 4 • ROW Daughterboard to Motherboard or Chassis . 075" # 2 -5 6 S.S.INSERT 3 PLCS .310 (2 PLCS) — .0875 — .0 7 5 Í.0 0 1 TYP RECEPTACLE DIMENSIONS ,019±.001 — DIA TYP ,100±.001 T Y P H

ZO 107 MA

Abstract: 341S
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low

C298D

Abstract: C160D c152d
Contextual Info: AirBorn R M 6 3 2 - 2 5 2 - 1 9 2 -9 5 0 1 - 9 8 5 THE CONNECTOR COMPANY • ROW Daughterboard to Motherboard or Chassis .075" RM6 R M 6 4 2 - 2 5 2 - 8 1 2 -9 6 0 1 162 thru 402 Contacts .550 — I .5 5 0 I— .4 8 6 |^—/ POSITION # 1 ^ — — h .470

C1593

Abstract: C155D airborn RM6
Contextual Info: AirBorn R M 6 3 2 - 2 5 2 - 1 9 2 -9 5 0 1 - 9 8 5 THE CONNECTOR COMPANY • ROW Daughterboard to Motherboard or Chassis .075" RM6 R M 6 4 2 - 2 5 2 - 8 1 2 -9 6 0 1 162 thru 402 Contacts .550 — I .5 5 0 I— .4 8 6 |^—/ POSITION # 1 ^ — — h .470

Contextual Info: AirBorn THE CONNECTOR COMPANY RM412 -1 6 4 -1 9 2 -9 5 0 1 - 9 3 3 4 • ROW Daughterboard to Motherboard or Chassis .075" ORGANIZER -vVIi =SU n— TYP — .014±.001 x •007Ì.001 TYP SEE NOTE # 2 -5 6 S.S. INSERT 3 PLCS ROLL PIN TYP DIMENSIONS PLUG NOTE:

sn 7441

Contextual Info: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz <n • GATE LENGTH: 0.3 [im • GATE WIDTH: 280 urn

Contextual Info: Philips Semiconductors Product specification LCD row/column driver for dot matrix graphic displays CONTENTS PCF8578 18 SOLDERING Introduction Reflow soldering Wave soldering LQFP VSO Method LQFP and VSO Repairing soldered joints 1 FEATURES 2 APPLICATIONS

C4368

Contextual Info: F# CYPRESS CY7C43626 CY7C43636/CY7C43646 CY7C43666/CY7C43686 PRELIM INARY 2 5 6 /5 1 2 / 1 K / 4 K / 1 6 K Features x 3 6 / x 1 8 x 2 T ri B u s F IF O Fully asynchronous and simultaneous read and write operation permitted Mailbox bypass register for each FIFO

HARRIS SEMICONDUCTOR APPLICATION NOTES

Abstract: lm 1456 n MC1554 CD4046 LM102 HD-245 HD-246 MC1582L MC1583L MC1584L
Contextual Info: MANUFACTURER PART NUMBER Motorola continued National Semiconductor HARRIS EQUIVALENT NOTES MC 1545/1445 HA-2400/2405 C3 MCI 554/1454 HA-2630/2635 C3 MC1556/1456 HA-2600/2605 B2 MCI 558/1458 HA-2650/2655 A2 MC1582L HD-245 C2 MC1583L HD-246 C2 MC1584L HD-249

GM 90 562 573

Abstract: NE33200 NE33200M NE33200N
Contextual Info: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to

Contextual Info: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to