302B Search Results

MVL-302B1

Abstract: 302B1
Contextual Info: T-1 φ 3mm DUAL COLOR INDICATOR LAMP Description MVL-302B1 Package Dimensions Unit: mm (inches) The MVL-302B1 is a white diffused, wide viewing angle, dual chips, utilizing Gallium Phosphide on Gallium Phosphide green light emitting diode and Gallium Arsenide Phosphide on Gallium Phosphide

MVL-302B3A

Contextual Info: T-1 φ 3mm DUAL COLOR INDICATOR LAMP Description MVL-302B3A Package Dimensions Unit: mm (inches) The MVL-302B3A is a white diffused, wide viewing angle, dual chips, utilizing Gallium Phosphide on Gallium Phosphide green light emitting diode and Gallium Arsenide Phosphide on Gallium Phosphide

Contextual Info: 302B SONY. Block-type 200mW High Power Laser Diode Description Package Outline U nit : mm SLD 302B is a high power laser diode m ounted on a 3 x 3 x 5mm Copper block. It is ideal fo r a pp lica tio ns w h ich require a m inim al distance between the laser fa ce t and

Quadrature Hybrid

Abstract: 113B DQK-302B 302b
Contextual Info: QUADRATURE HYBRID MODEL DQK-302B WIDE BANDWIDTH 20 - 60 MHz SPECIFICATIONS Operating Frequency: Insertion Loss: Isolation: 20 - 60 MHz 0.3 dB Typ / 0.5 dB (Max) 23 dB (Typ)/20 dB (Min) Amplitude Unbalance: 0.8 dB (Typ) / 1.0 dB (Max) Phase Unbalance: VSWR:

MVL-302B1C

Contextual Info: T-1 φ 3mm DUAL COLOR INDICATOR LAMP Description MVL-302B1C Package Dimensions Unit : mm (inches) The MVL-302B1C is a white diffused, wide viewing angle, dual chips, utilizing Gallium Phosphide on Gallium Phosphide green light emitting diode and Gallium Arsenide Phosphide on Gallium Phosphide

54ls40

Abstract: 13003 application notes J006 F 54LS37 X 13003 Raytheon Company nand
Contextual Info: MIL-M-38510/302C 9 August 1983_ SUPERSEDING MIL-M-38510/302B USAF 19 D e c e m b e r 19 77 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, SCHOTTKY T T L , LOW-POWER, BU FF ERS, M O N O L I T H I C SILICON T h i s s p é c i f i c a t i o n is a p p r o v e d f o r u s e by all D e p a r t ­

HW-302B

Abstract: vc2005
Contextual Info: InSb Hall Element HW-302B Shipped in bulk 500pcs per pack Notice : It is requested to read and accept "IMPORTANT NOTICE" written on the back of the front cover of this catalogue. ●Absolute Maximum Ratings Item Symbol Max. Input Current Ⅰc Unit 20 mA −40 ~ ＋110

PH302B

Contextual Info: N E C ELECTRONICS INC 3QE D b457S2S 0D2TbG3 ñ r PHOTO D IO D E c P H 302B P L A ST IC M OLDED PIN PHOTO DIO DE D E S C R IP T IO N P A C K A G E D IM E N S IO N S P H 3 0 2 B is a photo diode with P IN structure. It has a wide U n it: m m photo-receiving area and high speed response enabling applica­

PH302B

Abstract: rtk 32 B427 pcb diagram ethanol
Contextual Info: N E C ELECTRONICS INC 3QE D • b42752S ODSTbGB ñ ■ T - ty - S 3 / 1 PHOTO DIODE /_ PH 302B P L A S T IC M O LD E D P IN PHOTO D IO D E D E S C R IP T IO N P A C K A G E D IM E N S IO N S Unit: mm P H 30 2B is a photo diode with P IN structure. It has a wide

Contextual Info: InSb Hall Element HW-302B Shipped in bulk 500pcs per pack Notice : It is requested to read and accept "IMPORTANT NOTICE" written on the back of the front cover of this catalogue. ●Absolute Maximum Ratings Item Symbol Max. Input Current Ⅰc Unit 20 mA −40 ~ ＋110

2N2708

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 November 1999 INCH-POUND MIL-PRF-19500/302C 1 August 1999 SUPERSEDING MIL-S-19500/302B 20 January 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN,

HW-302B

Abstract: hall ic 550 HW302B 302b
Contextual Info: InSb Hall Element HW-302B •High-sensitivity InSb Hall element. •Thin SIP package. •Shipped in bulk 500pcs per pack . •Absolute Maximum Ratings Item Symbol Limit Unit Max. Input Current Ic 20 mA Operating Temp. Range Topr. –40 to +110 ˚C Storage Temp. Range

HW-302B

Contextual Info: InSb Hall Element HW-302B Please be aware that AKE products are not intended for use in life support equipment, devices, or systems. Use of AKE products in such applications requires the advance written approval of the appropriate AKE officer. Certain applications using semiconductor devices may involve potential

Contextual Info: CERAMIC FILTERS TOYOCOM FOR PCS Type N o m in a l fre q u e n c y C-102B C-202B C-302B 1960M H z 1960M H z 1691M H z 1 9 3 0 -1990M H z 1 9 3 0 - 1990M H z 1661 -1 7 2 1 M H z In s e rtio n lo s s 1.8 d B M a x 1 9 3 0 - 1 9 9 0 M H z 1 OdB M a x (1 9 3 0 -1 9 9 0 M H z )

op amp 301b

Abstract: dg303bdj s4 vishay DG303B DG300B DG300BDJ DG301B DG301BDJ DG302B 303B
Contextual Info: DG300B/301B/302B/303B Vishay Siliconix CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D D D D D D D Full Rail-to-Rail Analog Signal Range D Low Signal Error D Low Power Dissipation D Low Level Switching Circuits D Programmable Gain Amplifiers D Portable and Battery Powered Systems

RPM-302B

Abstract: RPM-20CT for basic PIN PHOTO DIODE photo type rpm RPM302B
Contextual Info: RDHVn PIN Photodiodes RPM _ ROHM photodiodes are PIN diode chips, featuring fast and linear response. Package Side view resin Part No. RPM-302B Feature Visible ray cut Visible ray cut 860nm> Absolute maximum ratings Vr (V) Pd (mW) 32 150 Standard Characteristics

HW-302B

Contextual Info: InSb Hall Element HW-302B Shipped in bulk 500pcs per pack Notice : It is requested to read and accept "IMPORTANT NOTICE" written on the back of the front cover of this catalogue. ●Absolute Maximum Ratings Item Symbol Max. Input Current Ⅰc Unit 20 mA −40 ~ ＋110

HW-302B

Contextual Info: InSb Hall Element HW-302B Shipped in bulk 500pcs per pack Notice : It is requested to read and accept "IMPORTANT NOTICE" written on the back of the front cover of this catalogue. ●Absolute Maximum Ratings Symbol Max. Input Current Ⅰc Unit 20 mA −40 ~ ＋110

Contextual Info: InSb Hall Element HW-302B Shipped in bulk 500pcs per pack Notice : It is requested to read and accept "IMPORTANT NOTICE" written on the back of the front cover of this catalogue. ●Absolute Maximum Ratings Symbol Max. Input Current Ⅰc Unit 20 mA −40 ~ ＋110

HW-302B

Abstract: HW302B
Contextual Info: InSb Hall Element HW-302B HW-302Bは リードを一方向に配したSIP形状InSb高感度ホール素子です。 モールド層が薄いため、 ギャップの狭い所に配置することができます。 標準はバルク供給となります。

Contextual Info: 5.85-40 GHz LOW POWER PRECISION WAVEGUIDE TERMINATIONS • Excellent Match, Superior VSWR • Lightweight SPECIFICATIONS FREQUENCY RANGE GHz MODEL W AVEGUIDE Size FLANGE Equivalent To 5.85-8.2 302B W R-137 UG-441/U 5 20 1.02 8 227 8.2-12.4 300C W R-90 UG-39/U

dg303bdj

Abstract: DG300B DG300BDJ DG301B DG301BDJ DG302B DG303B dg303bdy op amp 301b DG303BD
Contextual Info: DG300B/301B/302B/303B Vishay Siliconix CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D D D D D D D Full Rail-to-Rail Analog Signal Range D Low Signal Error D Low Power Dissipation D Low Level Switching Circuits D Programmable Gain Amplifiers D Portable and Battery Powered Systems

CR120

Abstract: k2761 CR-100 CR100 102-AD CR100-802AD CR100-102LC 202AD CR1003 SKs TRANSISTOR
Contextual Info: FAST TURN OFF THYRISTORS — 90 to 200A •t A V S5°C O u tlin e 90 A 9 tq = 2 0 |iS T y p e No. t q = 15[jS CR10 0 -1 02AC CR100-202AC CR100-302AC CR100-402AC CR100-502AC CR100-602AC CR100-702AC CR100-802AC CR100-802AC CR1 OO-'I02BC CR100-202BC CR100-302BC

Hitachi DSA0076

Abstract: HD74HCT1G02
Contextual Info: HD74HCT1G02 2–input NOR Gate ADE-205-302B Z 3rd. Edition April 2001 Description The HD74HCT1G02 is high speed CMOS two input NOR gate using silicon gate CMOS process. With CMOS low power dissipation, it provides high speed equivalent to LS–TTL series. The internal circuit of