302 PHOTO Search Results

RPI-302

Contextual Info: RPI-302 Sensors Photointerrupter, double-layer mold type RPI-302 The RPI-302 is standard tall package photointerrupter. This product can be fix on PCB by snap. zExternal dimensions Units : mm zApplication Reel count sensor for VCR Notes: 1. Unspecified tolerance shall be ±0.2.

"tilt sensor"

Abstract: SUN POSITION SENSOR tilt sensor SG-302
Contextual Info: Tilt Sensor KODENSHI SG-302 DIMENSIONS Unit : mm The SG-302 reflective sensor for paper sensing combine high-output GaAs IRED with high sensitivity photodiode. It is most applicable to tilt sensor. FEATURES •High performance •High-speed response APPLICATIONS

ST-303

Abstract: ST-302
Contextual Info: Photo transistors KODENSHI ST-302・ST-303 DIMENSIONS Unit : mm The ST-302, 303 a high-sensitivity NPN silicon phototransistor mounted in a clear sidelooking package, is compact, low profile and easy to mount. FEATURES •Low profile package •Compact •Low-cost

foto transistor

Abstract: 302 phototransistor datasheet phototransistor 302 Q62702-P1623 Q62702-P1624 Q62702-P1625 Q62702-P1626 Q62702-P1627 Q62702-P1641 E F 302
Contextual Info: SFH 302 SFH 302 fet06017 NPN-Silizium-Fototransistor Silicon NPN Phototransistor Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm

Contextual Info: フォトトランジスタ PHOTOTRANSISTORS ST-302 ST-302は縦型透明樹脂でモールドされた高感度のシリコンフォト •外形寸法 DIMENSIONS（Unit : mm） The ST-302 is a high-sensitivity NPN silicon phototransistor 0.5 mounted in a clear low profile side-viewing package. This

phototransistor 302

Abstract: photo transistor high current PHOTO TRANSISTOR A 720 transistor TRansistor A 940 Rise time of photo transistor 720 transistor 302 phototransistor npn photo transistor
Contextual Info: OST-302 PHOTO TRANSISTOR • General Description The OST-302 is high sensitivity NPN silicon photo-transistor mounted in a black side-looking package , is compact , low profile and easy to mount. ■ Features ˙Compact ˙Low profile package ˙Low cost plastic package

Contextual Info: 赤外発光ダイオード GaAs INFRARED EMITTING DIODES(GaAs) EL-302 EL-302は縦型透明樹脂でモールドされた高出力GaAs赤外発光 •外形寸法 DIMENSIONS（Unit : mm） 0.5 The EL-302 is a high-power GaAs IRED mounted in a clear low

SHARP S21ME4

Abstract: S21ME4 BS415 BS7002 E64380 S21ME S21ME3 S21ME3F S21ME3I S21ME4F
Contextual Info: 2001-10-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 75-302-56 S21ME3 optokopplare 75-302-64 S21ME4 optokopplare S21ME Series S21ME Series European Safety Standard Approved,

30 mHz BW preamplifier

Abstract: HFD3380-302
Contextual Info: 29 January 1998 HFD3380-302 Connectorized PIN PLUS Preamplifier FEATURES • Prealigned SC Connector sleeve • High speed — 1 GHz OPHO_220.doc DESCRIPTION The HFD3380-302 is a high-performance 850 nm PIN P-Type / Instrinsic / N-type detector plus amplifier

OSE-302

Abstract: Diode 302
Contextual Info: OSE-302 INFRARED EMITTING DIODE • General Description The OSE-302 is a high power GaAs IRED mounted in a clear side-looking package is compact low profile , and easy to mount . ■ Features ˙Compact ˙Low profile package ˙Low cost plastic package ˙Sidelooking plasric package

Contextual Info: HFD3380-302 Connectorized PIN PLUS Preamplifier FEATURES • Prealigned SC Connector sleeve • High speed a 1 GHz DESCRIPTION The HFD3380-302 is a high-performance 850 nm PIN P-Type / Instrinsic / N-type detector plus amplifier packaged for high-speed data communications. The

EL-302EL-303

Abstract: EL-302 EL-303
Contextual Info: Infrared Emitting Diodes GaAs KODENSHI EL-302・EL-303 DIMENSIONS (Unit : mm) The EL-302 a high-power GaAs IRED mounted in a clear sidelooking package, is compact, low profile, and easy to mount. FEATURES •Compact •Low profile package •Low-cost •Sidelooking plastic package

HFD3380-302

Abstract: to46 package 54-Pin preamp
Contextual Info: HFD3380-302 Connectorized PIN PLUS Preamplifier FEATURES • Prealigned SC Connector sleeve • High speed — 1 GHz OPHO_220.doc DESCRIPTION The HFD3380-302 is a high-performance 850 nm PIN P-Type / Instrinsic / N-type detector plus amplifier packaged for high-speed data communications. The

302-NSV

Contextual Info: : Weco - 302-NSV -DS : Page 1 of 4 DEPLUGGABLE TERMINAL STRIPS FOR PANEL / CHASSIS MOUNTING 302-NSV (-DS) 8.00 mm (0.315 in) Spacing - 1 - 12 poles Print this page ZOOM Dimensions: mm (in.) Length of Connector (L) L = No. of Poles x Center to Center Spacing - 2 mm

Contextual Info: : Weco - 302-NFB -DS : Page 1 of 4 DEPLUGGABLE TERMINAL STRIPS FOR PANEL / CHASSIS MOUNTING 302-NFB (-DS) 8.00 mm (0.315 in) Spacing - 1 - 12 poles Print this page ZOOM Dimensions: mm (in.) Length of Connector (L) L = No. of Poles x Center to Center Spacing - 2 mm

Sunshine Science

Abstract: sunshine ST-302 82c08 22C02
Contextual Info: n ffigfifi ST-302 PHOTOTRANSISTORS SU NSH INE SC IE N C E su n sh in e DIMENSIONS U n it: mm S T -3 0 2 & v l i v b ? > * s Z 2 V to T he S T -302 is a h ig h -se n sitivity NPN silicon p ho to tra n sisto r m o u n te d in a c le a r low p ro file s id e -v ie w in g p a c k a g e . T h is

PHOTO TRANSISTOR 940nm

Abstract: PHOTO TRANSISTOR "photo transistor" TN2469TK electrooptical transistor
Contextual Info: PHOTO TRANSISTOR 光 電 晶 體 302 Photo Transistor Series Part Number: TN2469TK Package outlines NOTES: 1. All dimensions are in millimeters inches ; 2. Tolerances are ±0.2mm (0.008inch) unless otherwise noted. ITEM Resin (mold) Bonding wire MATERIALS

Contextual Info: チルトセンサ TIlT SENSORS SG-302 SG-302は高出力赤外発光ダイオードと、高感度フォトダイオー •外形寸法 DIMENSIONS（Unit : mm） ドを組み合わせた反射型フォトセンサです。チルトセンサとして最

QAA27

Abstract: sfh siemens
Contextual Info: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Features Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm

foto transistor

Abstract: GETY6017 Q62702-P1641
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz, mit Basisanschluß • Gruppiert lieferbar

302 opto

Abstract: GET06017 Q62702-P1624 Q62702-P1625 Q62702-P1641 npn phototransistor
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz, mit Basisanschluß • Gruppiert lieferbar

MCE 2000

Abstract: 1 MEGA OHM RESISTOR 1 mega ohms resistor MCE-8V4C-302
Contextual Info: MCE-8V4C-302 850 nm VCSEL Features ♦ High speed ≥ 1 GHz. ♦ Photodiode for monitoring laser output. ♦ TO-46 hermetic packaging with a lens cap. ♦ Common cathode pin-out. Applications ♦ Optical communication system - Gigabit Ethernet - Fiber Channels

Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz, mit Basisanschluß • Gruppiert lieferbar

Infrared Phototransistor 302

Abstract: LTR-5576D 302 phototransistor datasheet LTE-302-M LTE-309 LTR-5986DH phototransistor 302 302 phototransistor if lte LTE-302
Contextual Info: GaAs Plastic Side Look Infrared Emitting Diode LTE-302-M/LTE-309 Features Package Dimensions Selected to specific on-line intensity and radiant intensity ranges. Low cost plastic end looking package. Mechanically and spectrally matched to the LTR-5576D/ LTR-5986DH series of phototransistor.