3015 MJ Search Results

MSK3015

Contextual Info: ISO-9001 CERTIFIED BY DSCC THREE PHASE BRIDGE MOSFET POWER MODULE M.S.KENNEDY CORP. 3015 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: All N-Channel Mosfets Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity Avalanche Rated Devices

MSK3015

Abstract: 3015 mj
Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. THREE PHASE BRIDGE MOSFET POWER MODULE 3015 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: All N-Channel Mosfets Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity Avalanche Rated Devices

MSK3015

Contextual Info: M.S.KENNEDY CORP. THREE PHASE BRIDGE MOSFET POWER MODULE 3015 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: All N-Channel Mosfets Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity Avalanche Rated Devices Interfaces with Most Brushless Motor Drive IC's

SN54ABT620

Abstract: SN74ABT620
Contextual Info: SN54ABT620, SN74ABT620 OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS SC BS113B- FEBRUARY 1991 - REVISED JULY 1994 State-of-the-Art EPIC-I I S BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds

Contextual Info: M.S.KENNEDY CORP. THREE PHASE BRIDGE MOSFET POWER MODULE 3015 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: All N-Channel Mosfets Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity Avalanche Rated Devices Interfaces with Most Brushless Motor Drive IC's

MJ8503

Abstract: MJ8502 MJ8504 J8503
Contextual Info: MOTOROLA SC 1EE 0 § b3fc.72S4 O O f l i m ? ^ | XSTRS/R F MOTOROLA MJ8502 MJ8503 SEMICONDUCTOR TECHNICAL DATA D e s i g n e r s Data. S h e e t S .0 A M P ER E N P N SILIC O N PO W ER T R A N S IS T O R S SW ITCH M O D E S ER IES NPN S ILICO N POW ER T R A N SIS T O R S

3010 IC

Abstract: RURG
Contextual Info: RURG3010, RURG3015, RURG3020 HARRIS S E M I C O N D U C T O R 30A, 100V - 200V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft R ecovery. <45ns JE D EC S TYLE 2 L E A D TO -247 • Operating T em p eratu

P3010R

Abstract: P3020
Contextual Info: RURP3010, RURP3015, RURP3020 HARRIS S E M I C O N D U C T O R 30A, 100V - 200V Ultrafast Diodes A pril 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 45ns JE D EC TO -220A C ANODE • +175°C Rated Junction Temperature CATHODE

TRANSISTOR mj900

Abstract: MJ901 MJ900 mj1001
Contextual Info: m o to ro la sc x s trs /r 12E f D I b3b72S4 0004^73 b | 7 ^3 3 - 3 / r - 3 3 '2 8 PNP MJ900, MJ901 MOTOROLA SEMICONDUCTOR NPN TECHNICAL DATA MJ1000, MJ1001 8.0 AMPERE D A R L IN G TO N POWER TRANSISTO RS C O M PLEM EN TA R Y SILICO N M EDIUM -POW ER C O M PLEM ENTARY

MJ12010

Abstract: MR91S
Contextual Info: MOTOROLA SC XSTRS/R F 15 E 0 | t>3b72SM 00 05 1 0 3 2 | # MOTOROLA • SEMICONDUCTOR MJ12010 TECHNICAL DATA 10 A M P E R E HORIZONTAL DEFLECTION TRANSISTOR NPN SILICON POWER TRANSISTOR . specifically designed for use in C R T deflection circuits. • Collector-Emitter Voltage — V c E X “ 950 Volts

mj11015

Abstract: mj11011
Contextual Info: MOTOROLA SC 12E 0 § b3b?2S4 00ÖS074 T | XSTRS/R F T-33^9 7 ^ 3 3 -3 7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP npn' Ml 11011 Ml 11013 MJ11015 Ml 11012 MJ11014 MJ11016 H IG H -C U R R E N T C O M P L E M E N T A R Y S IL IC O N T R A N S IS T O R S 30 A M P E R E

2N6678 motorola

Abstract: Motorola 3-252 ca3725 Motorola Transistor 3-252 JH transistor 6676 transistor Motorola 3-252 to-3
Contextual Info: "Tb MOTOROLA SC iXSTRS/R F> 6367254 M OT O R O L A SC CXSTRS/R F DE Jt.3t.72SM OOÛOSlt. 2 96D 60 516 D T-33-13 2IM6648 M O TO RO LA See Page S E M IC O N D U C T O R TECH N ICAL DATA 3-209 N P N Silico n Pow er T ransistors 2N6676 2N6677 2N6678 The 2N6676, 2N6677, 2N6678, MJH6676, MJH6677, and MJH6678 transistors are

mj10025

Contextual Info: MOTOROLA SC XSTR S/R F 12E D | b 3 b 7 2 S ‘4 OGflSObfl MOTOROLA M | 9 MJ10024 MJ10025 SEMICONDUCTOR TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 2 0 AMPERE N PN S ILIC O N POWER D A R LIN G TO N TR A N S IS T O R S SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS

MJH16018

Abstract: baker e4 MTPSP10 P6302 a626 AM503 bt 109 transistor K1118 MJ16018 MTP8P10
Contextual Info: MOTORGLA SC XSTRS/R F 12E D I t»3b?E5M []GaS227 1 | 7 ^ 3 3 - / S ' ' MOTOROLA r - 3 3 -/ 3 SEMICONDUCTOR TECHNICAL DATA M J16018 MJH16018 Designer's Data Sheet NPN Silicon Pow er Transistors 1.5 k V Sw itch m ode III Series These transistors are designed for high-voltage, high-speed, power switching in induc­

mj 1504

Abstract: mj1504 pnp mj 1504 mj 1504 transistor pnp 222A transistor mj 1504 transistors mj 1504 MJ8505 transistor k 3562 of mj 1504 transistor
Contextual Info: MOTOROLA SC XSTRS/R 12E 0 § F b3b?2S4 MOTOROLA GOflSOGB «1 | MJ8504 MJ8505 SEMICONDUCTOR TECHNICAL DATA D e s i g n e r s D ata. S h e e t 10 AMPERE NPN SILICON POWER TR A N SIST O R S SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS 700 and 800 VOLTS 175 WATTS

Contextual Info: M O T O RO L A SC XSTRS/R 1SE D I F b3fei7254 O G ö S i a i MOTOROLA SEMICONDUCTOR M | MJ13070 TECHNICAL DATA D e s ig n e r ’s D a ta Sheet 5 AMPERE NPN SILICON POWER TRANSISTOR SWITCHMODE II SERIES NPN SILICON POWER TRANSISTOR T h e M J 13070 tra n sisto r is d e sig n e d for high-voltage, hig h-speed ,

H16S

Abstract: je210
Contextual Info: M OT O RO LA SC XSTRS/R 1EE F § b3fc.72S4 MOTOROLA ^ | MJ8502 MJ8503 S E M IC O N D U C T O R TECHNICAL DATA D e s ig n e r s O O flim ? D a ta . S h e e t S.0 A M P E R E NPN SILICON POWER TR AN SISTO RS SWITCHMODE SE R IE S NPN SILICO N POWER TRANSISTORS

MJ10002

Abstract: bem diode
Contextual Info: MOTOROLA SC XSTRS/R F MOTOROLA SEM ICO N DUCTO R M J1 0 0 0 2 TECHNICAL DATA D e sig n e rs D a ta Sheet 10 A M PER E NPN SILICON SWITCHMODE S E R IE S NPN SILICO N POWER DARLIN GTON TRAN SISTO RS POWER DARLINGTON TRAN SISTORS The MJ10002 Darlington transistor is designed for high-voltage,

MJ10001

Contextual Info: MOTOROLA SC 12E D I b3b?SS4 GQflSGGT T | XSTRS/R F MOTOROLA ~7:~33'£t MJ10000 MJ10001 SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’ s D a ta Sheet 20 A M P E R E NPN SILICON POWER DARLINGTON TRANSISTORS SWITCHMODE SER IES NPN SILICON POWER DARLINGTON TRANSISTORS

MJ8502

Abstract: MJ8503 J8503 1N4934 AN-222 MJE200 Avalanche B00 J850
Contextual Info: MOTO R O L A SC XSTRS/R 12E 0 § b3b72SM 0004^^7 ^ | F i~ MOTOROLA MJ8502 MJ8503 SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta S h e e t 5 .0 A M P E R E NPN SILICON POWER TRANSISTORS SW IT C H M O D E S E R IE S NPN S IL IC O N POW ER T R A N S IS T O R S

U418B

Abstract: schemat telefunken integrierte Schaltung u418 rezystor
Contextual Info: ZDZISLAW TKACZYK lad scalony U418B bdpowiadajqc na lkzne pytania Czytelnikow, ktorzy w sklepach pomisu kupili uklad scalony U418B, informujemy, ie jest to uktad rodukcji finny Telefunken, spehiiajqcy funkcj^ odbiornika M/FM. Uklad zawiera oscylator AM dla zakresu fal dtugich,

TPIC6C595

Contextual Info: TPIC6C595 POWER LOGIC 8-BIT SHIFT REGISTER SLIS061A – JULY 1998 – REVISED JULY 1999 D D D D D D D D Low rDS on . . . 7 Ω Typ Avalanche Energy . . . 30 mJ Eight Power DMOS Transistor Outputs of 100-mA Continuous Current 250-mA Current Limit Capability

transistor ITT 2907

Abstract: equivalent for transistor tt 2222 itt 2907 transistor mj10005 MJ10004 transistor ITT 2907 A
Contextual Info: MOTOROLA SC XSTRS/R F WE D I 1 3 1.7 351 MOTOROLA 0 | r ' ^ MJ10004 Ml10005 SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D ata. S h e e t S W IT C H M O D E 0005051 20 AMPERE NPN S IL IC O N S E R IE S NPN S IL IC O N P O W E R D A R L IN G T O N T R A N S IS T O R S

TPIC6C595

Contextual Info: TPIC6C595 POWER LOGIC 8-BIT SHIFT REGISTER SLIS061A – JULY 1998 – REVISED JULY 1999 D D D D D D D D Low rDS on . . . 7 Ω Typ Avalanche Energy . . . 30 mJ Eight Power DMOS Transistor Outputs of 100-mA Continuous Current 250-mA Current Limit Capability