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301F1FM
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Unknown
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The Diode Data Book with Package Outlines 1993 |
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103.88KB |
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301F2FM
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Unknown
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The Diode Data Book with Package Outlines 1993 |
Scan |
PDF
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103.88KB |
2 |
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301F3FM
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Unknown
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The Diode Data Book with Package Outlines 1993 |
Scan |
PDF
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103.89KB |
2 |
P1301FAP
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Jiangsu JieJie Microelectronics Co Ltd
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Pxxx1FAP series thyristors are semiconductor components designed for transient surge protection, featuring peak off-state voltages from 28V to 220V, fast ns-level response, high surge current handling up to 50A, low on-state voltage of 1.8V to 2.2V, and fail-short protection under over-surge conditions.Pxxx1FAP series thyristors are unidirectional semiconductor devices designed for transient surge protection, featuring peak off-state voltage up to 250V, fast ns-level response, high surge current capability, and low capacitance, suitable for robust overvoltage protection in electronic circuits.Pxxx1FAP thyristors are semiconductor components designed for transient surge protection, featuring peak off-state voltages from 28V to 220V, fast ns-level response, high surge current handling up to 50A, low on-state voltage of 1.8V to 2.2V, and fail-short protection under overvoltage conditions.Pxxx1FAP thyristors are semiconductor components designed for transient surge protection, featuring ns-level response, 50 A peak pulse current (10/1000 μs), low capacitance, and fail-short behavior under over-surge conditions. |
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AK2301F
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AK Semiconductor
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AK2301F P-Channel enhancement mode power MOSFET with -20V drain-source voltage, -2A continuous drain current, low RDS(ON) of 120mΩ at VGS=-4.5V, suitable for load switch and PWM applications in SOT-23 package. |
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GD30LD3301FU
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GigaDevice Semiconductor (Beijing) Inc
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3A LDO, 180mV dropout, 0.8V-3.95V output, adjustable to 5.2V, 1.1V input with BIAS, high PSRR, soft-start, enable control, power good. |
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NCE2301F
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NCEPOWER
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P-Channel Enhancement Mode MOSFET with -20V drain-source voltage, -2A continuous drain current, RDS(ON) less than 150mΩ at VGS=-2.5V, available in SOT-23 package. |
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