2N7475
Abstract: 2N7476
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 June 2013. MIL-PRF-19500/685F 6 May 2013 SUPERSEDING MIL-PRF-19500/685E 22 April 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
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2n7484t3
Abstract: 2n7483t3 2n7484 2n7482 2N7483 IRHY57130CM 2N7482T3 IRHY57034CM IRHY57Z30CM
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 August 2010. MIL-PRF-19500/702C 21 May 2010 SUPERSEDING MIL-PRF-19500/702B 30 May 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
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2N7468
Abstract: 2n7468u2 2N7469 2n7469u2 IRHNA57064 TO-276AC
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 November 2010. MIL-PRF-19500/673B 19 August 2010 SUPERSEDING MIL-PRF-19500/673A w/AMENDMENT 1 5 November 2009 PERFORMANCE SPECIFICATION SHEET
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2N7498T2
Abstract: 2N7497 2N7499T2 2N7497T2 IRHF57133SE MIL-PRF19500 MOSFET cross-reference 2N7499 mil-prf-19500/JANTX2N5152
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 November 2010. MIL-PRF-19500/706B 23 August 2010 SUPERSEDING MIL-PRF-19500/706A 21 January 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
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2n7609u8
Abstract: IRHLNMC77110 2n7609 MIL-PRF-19500/246 IRHLNM77110 IRHLNM 2N7609U8C smd transistor marking u8c smd02
Contextual Info: INCH-POUND MIL-PRF-19500/758 28 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE AND SINGLE EVENT EFFECTS TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7609U8 AND 2N7609U8C, JANTXVR, F AND G AND JANSR, F AND G
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2N7470
Abstract: JANS 2N7470T1
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 July 2013. MIL-PRF-19500/698E 20 May 2013 SUPERSEDING MIL-PRF-19500/698D 1 November 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE
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2n7608
Abstract: IRHLF77110 mmc 4011 E 2N7608T2
Contextual Info: INCH-POUND MIL-PRF-19500/752 2 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED TOTAL DOSE AND SINGLE EVENT EFFECTS , LOGIC-LEVEL SILICON, TYPE 2N7608T2, JANTXVR, JANTXVF, JANSR, AND JANSF
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2N7476T1
Abstract: 2N7475 2n7476 2N7475T1 2N7477 2N7477T1 IRHMS57163SE MIL-PRF-19500/685 IRHMS57260SE 300MeV
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 July 2010. MIL-PRF-19500/685E 22 April 2010 SUPERSEDING MIL-PRF-19500/685D w/AMENDMENT 1 11 November 2009 PERFORMANCE SPECIFICATION SHEET
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2N7626
Abstract: 2N7626UB IRHLUB7970Z4 MOSFET cross-reference 2N7626UBN 3PAD jan,tx series semiconductors um 031 diode
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 June 2010. INCH-POUND MIL-PRF-19500/745B 18 March 2010 SUPERSEDING MIL-PRF-19500/745A 26 February 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL,
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SmD TRANSISTOR a75
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 April 2013. MIL-PRF-19500/704E 25 January 2013 SUPERSEDING MIL-PRF-19500/704D 18 July 2012 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
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2N7473U2
Abstract: 2N7472U2 2N7472 2N7474U2 2N7473 IRHNA57163SE IRHNA57260SE IRHNA57264SE
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 January 2011. MIL-PRF-19500/684E 27 October 2010 SUPERSEDING MIL-PRF-19500/684D 23 July 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL,
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2N7606U3
Abstract: IRHLYS77034CM 2n7606 2n7607
Contextual Info: INCH-POUND MIL-PRF-19500/756 28 April 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED TOTAL DOSE AND SINGLE EVENT EFFECTS , LOGIC-LEVEL SILICON, TYPES 2N7607T3 AND 2N7606U3 JANTXVR, JANTXVF, JANSR, AND JANSF
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2n7481u3
Abstract: 2N7479U3 2n7479 2n7481 2N7480U3 2N7480 SMD05
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 November 2010. MIL-PRF-19500/703B 30 August 2010 SUPERSEDING MIL-PRF-19500/703A 2 July 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
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2N7503U8
Abstract: 743b diode 2N7503 743B 2N7503U8C IRHNM57110 SMD-02 smd transistor marking B5 transistor 3e5 smd
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 July 2010. MIL-PRF-19500/743B 22 April 2010 SUPERSEDING MIL-PRF-19500/743A 24 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
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2N7467U2
Abstract: 2n7467 JANTXV 2N7467U2 MIL-STD-750 method 3161 TO-276AC IRHNA57Z60
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 September 2010. MIL-PRF-19500/683D 25 June 2010 SUPERSEDING MIL-PRF-19500/683C 5 November 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL,
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