300 W AMPLI Search Results
300 W AMPLI Result Highlights (4)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 |
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BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| TAS5624ADDV |
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150W Stereo/300W Mono PurePath HD Digital-Input Power Stage 44-HTSSOP 0 to 70 |
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| TAS5614LADDV |
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150W Stereo/300W Mono HD Digital-Input Power Stage 44-HTSSOP 0 to 125 |
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| TAS5614LADDVR |
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150W Stereo/300W Mono HD Digital-Input Power Stage 44-HTSSOP 0 to 125 |
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300 W AMPLI Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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BLA1011-300
Abstract: sot957 SOT-95
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BLA1011-300 BLA1011-300 sot957 SOT-95 | |
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Contextual Info: m 2N3635 \ \ SILICON PNP TRANSISTOR DESCRIPTION: The 2N3635 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 300 mA lc V -140 V ce P diss 5.0 W @ T C= 2 5 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 35 °C/W 0JC |
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2N3635 2N3635 | |
83ab
Abstract: PS/2 KEYBOARD CONTROLLER 80C51 keyboard controller TP8511
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TP8511HBE01 Apr/2002 TP8511KB 83ab PS/2 KEYBOARD CONTROLLER 80C51 keyboard controller TP8511 | |
FW250A1
Abstract: FW300A1 FW250
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FW250A1 FW300A1 DS99-317EPS DS97-467EPS) FW250 | |
capacitor .01mf 100v
Abstract: 22mf capacitor 1000uF 63v purepath class G
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TAS5630 SLES220B 80-dB 100-dB capacitor .01mf 100v 22mf capacitor 1000uF 63v purepath class G | |
RDR-131
Abstract: Power Integrations LNK306dn L03316-102-RM lnk306d lnk306 lnk30* an-37 crf253 MMST3904 TFT-200-22
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LNK306DN RDR-131 EN55022 components89 RDR-131 Power Integrations LNK306dn L03316-102-RM lnk306d lnk306 lnk30* an-37 crf253 MMST3904 TFT-200-22 | |
M3H-50
Abstract: M3V-50
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M3H-50/M3V-50 MIL-STD-202 M3H-50 M3V-50 M3H-50 M3V-50 | |
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Contextual Info: B048F240T30 B 048 F 240 M 30 BCMTM Bus Converter • 48 V to 24 V V•I Chip Bus Converter • Typical efficiency 96% • 300 Watt 450 Watt for 1 ms • 125°C operation (TJ) • High density – 1017 W/in3 • <1 µs transient response • Small footprint – 260 W/in2 |
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B048F240T30 B048F240T30 | |
pwm lm358 mosfet
Abstract: LM324 TO 220 Package High current N CHANNEL MOSFET 200 Amp n channel mosfet circuit diagram of OP amp based circuits
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PWR-NCH401PUC1 PWR-NCH401PUC2 PWR-NCH401PUC3 24-PIN OT070° OT0700C PWR-NCH401 pwm lm358 mosfet LM324 TO 220 Package High current N CHANNEL MOSFET 200 Amp n channel mosfet circuit diagram of OP amp based circuits | |
IDG 600
Abstract: AN504 CLC410 DG884 DG884DN HP4192A Si582 Si584
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DG884 DG884 08-Apr-05 IDG 600 AN504 CLC410 DG884DN HP4192A Si582 Si584 | |
MSM7507-01
Abstract: MSM7507-01GS-VK MSM7507-02 MSM7507-03 MSM7508B MSM7509B
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MSM7507-01702/MSM7507-01703 MSM7507 MSM7508B MSM7509B. b7242M0 MSM7507-01 MSM7507-01GS-VK MSM7507-02 MSM7507-03 MSM7509B | |
PKF 4110B SIContextual Info: E Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION Prepared also subject responsible if other EZIWSON Approved 1 (1) (4) No. Checked PKR 4000B series Direct Converters Input 36-75 V, Output up to 5 A / 15 W 1/1301-BMR6401421+ 00152-EN/LZT146 300 Uen Specification |
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1/1301-BMR6401421+ 00152-EN/LZT146 4000B MTB25 J-STD-020C PKF 4110B SI | |
sfh817a
Abstract: 1n4007 sod123 D217 OPTO NCP1397 RECTIFIER DIODE D100 diode zd201 opto d206 NCP1252 zener diode 1206 6v8 schematic diagram lcd tv sharp inverter
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TND401/D 680uH EFD30 NCP1052P44G TP207ST PH9080NL sfh817a 1n4007 sod123 D217 OPTO NCP1397 RECTIFIER DIODE D100 diode zd201 opto d206 NCP1252 zener diode 1206 6v8 schematic diagram lcd tv sharp inverter | |
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Contextual Info: Advance Data Sheet December 1996 microelectronics group Lucent Technologies Bell Labs Innovations FW300-Series Power Modules: 36 Vdc to 75 Vdc Input; 300 W Features • Size: 61.0 mm 2.4 in. x 116.8 mm (4.6 in.) x 13.5 mm (0.5 in.) ■ Operating case temperature range: |
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FW300-Series 73/23/EEC 93/68/EEC DS96-025EPS DS94-061EPS) 00025b? | |
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6j5 tube
Abstract: TUBE 6J5 6j5gt 6J5GT tube 6J5G "6j5" 6j1 tube 6J56 6j5 general electric 6j1 electron tube
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h6-210 6j5 tube TUBE 6J5 6j5gt 6J5GT tube 6J5G "6j5" 6j1 tube 6J56 6j5 general electric 6j1 electron tube | |
INF-8077i
Abstract: INF8077i PLRXXL-SC-S43-C1 JDSU 850nm VCSEL application SFf-8431 10 gb laser photodiode PIN photodiode 850nm schematic diagram for ac line voltage conditioner VCSEL 10g CHIP 850NM
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10GBASE-SR 10GBASE-SW 1-800-498-JDSU 800-5378-JDSU PLRXXL-SC-S43-C1 10GbE 498-JDSU 5378-JDSU PLRXXL-SC-S43-C1 INF-8077i INF8077i JDSU 850nm VCSEL application SFf-8431 10 gb laser photodiode PIN photodiode 850nm schematic diagram for ac line voltage conditioner VCSEL 10g CHIP 850NM | |
2n3739
Abstract: 2N3738 2n3739 motorola 2N6425
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2N3738 2N3739 r-37-/7 2N3738 2N3739) b3fci7a54 2N3738, 2n3739 2n3739 motorola 2N6425 | |
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Contextual Info: Preliminary V•I Chip Bus Converter Module B384F120T30 BCM V•I Chip – BCM Bus Converter Module TM • 384 V to 12 V V•I Chip Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1036 W/in3 |
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B384F120T30 | |
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Contextual Info: IBC Module IB054E120T32N1-00 4:1 Intermediate Bus Converter Module: Up to 300 W Output Features • Input: 36 – 60 Vdc • 97.6% peak efficiency • Output: 12.0 Vdc at 48 Vin • Low profile: 0.38” height above board • Output current up to 32 A • Industry standard 1/8 Brick pinout |
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IB054E120T32N1-00 IB054E120T40N1-00 | |
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Contextual Info: IBC Module IB054E096T40N1-00 5:1 Intermediate Bus Converter Module: Up to 300 W Output Features Size: 2.30 x 0.9 x 0.38 in 58,4 x 22,9 x 9,5 mm • Input: 36 – 60 Vdc • 97.4% peak efficiency • Output: 9.6 Vdc at 48 Vin • Low profile: 0.38” height above board |
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IB054E096T40N1-00 IB054E096T48N1-00 | |
MICRO switch hall Sensor
Abstract: hall sensor magnet 4 terminals 103SR12A-3
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C095082A 26JUL99 103SR12A-3 MICRO switch hall Sensor hall sensor magnet 4 terminals 103SR12A-3 | |
crystal generator 1GHz
Abstract: RF GEN 13.56MHz 433 to 450 mhz rf amplifier module AS3977 CFR47 MO-220 433.92MHz loop antenna design AS3977-TPD Murata-GRM1885C1H4R7CZ01
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AS3977 AS3977 20dBm 10dBm. crystal generator 1GHz RF GEN 13.56MHz 433 to 450 mhz rf amplifier module CFR47 MO-220 433.92MHz loop antenna design AS3977-TPD Murata-GRM1885C1H4R7CZ01 | |
EL85
Abstract: Mullard 2x15
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120Mc/s 120Mcjs EL85 Mullard 2x15 | |
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Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTD882 EPITAXIAL PLANAR NPN TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING FEATURES • Complementary to KTB772. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage 40 V V CBO Collector-Emitter Voltage |
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KTD882 KTB772. Cycled50% UUINTUNU01 | |