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    300 W AMPLI Search Results

    300 W AMPLI Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    TAS5624ADDV
    Texas Instruments 150W Stereo/300W Mono PurePath HD Digital-Input Power Stage 44-HTSSOP 0 to 70 Visit Texas Instruments Buy
    TAS5614LADDV
    Texas Instruments 150W Stereo/300W Mono HD Digital-Input Power Stage 44-HTSSOP 0 to 125 Visit Texas Instruments Buy
    TAS5614LADDVR
    Texas Instruments 150W Stereo/300W Mono HD Digital-Input Power Stage 44-HTSSOP 0 to 125 Visit Texas Instruments Buy

    300 W AMPLI Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BLA1011-300

    Abstract: sot957 SOT-95
    Contextual Info: BLA1011-300 Avionics LDMOS transistors Rev. 01 — 3 April 2007 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical performance


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    BLA1011-300 BLA1011-300 sot957 SOT-95 PDF

    Contextual Info: m 2N3635 \ \ SILICON PNP TRANSISTOR DESCRIPTION: The 2N3635 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 300 mA lc V -140 V ce P diss 5.0 W @ T C= 2 5 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 35 °C/W 0JC


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    2N3635 2N3635 PDF

    83ab

    Abstract: PS/2 KEYBOARD CONTROLLER 80C51 keyboard controller TP8511
    Contextual Info: TP8511HBE01 PS/2 Keyboard controller DataSheet Version: 1.0 Apr/2002 http://www.topro.com.tw 5 F, No.10, Prosperity Road 1, Science-Based Industrial Park, Hsinchu 300, Taiwan, R.O.C 300 新竹科學工業園區展業一路 10 號 5 樓 TPE: 5 F, No.27, Min Chuan W. Rd. Taipei 104, Taiwan, R.O.C


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    TP8511HBE01 Apr/2002 TP8511KB 83ab PS/2 KEYBOARD CONTROLLER 80C51 keyboard controller TP8511 PDF

    FW250A1

    Abstract: FW300A1 FW250
    Contextual Info: Data Sheet November 1999 FW250A1 and FW300A1 Power Modules: dc-dc Converters; 36 to 75 Vdc Input, 5 Vdc Output; 250 W to 300 W Features The FW250A1 and FW300A1 Power Modules use advanced, surface-mount technology and deliver high-quality, compact, dc-dc conversion at an economical price.


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    FW250A1 FW300A1 DS99-317EPS DS97-467EPS) FW250 PDF

    capacitor .01mf 100v

    Abstract: 22mf capacitor 1000uF 63v purepath class G
    Contextual Info: TAS5630 www.ti.com SLES220B – JUNE 2009 – REVISED FEBRUARY 2010 300-W STEREO / 600-W MONO PurePath HD ANALOG-INPUT POWER STAGE Check for Samples: TAS5630 FEATURES APPLICATIONS • • • • • 1 23 • • • • • • PurePath™ HD Enabled Integrated Feedback


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    TAS5630 SLES220B 80-dB 100-dB capacitor .01mf 100v 22mf capacitor 1000uF 63v purepath class G PDF

    RDR-131

    Abstract: Power Integrations LNK306dn L03316-102-RM lnk306d lnk306 lnk30* an-37 crf253 MMST3904 TFT-200-22
    Contextual Info: Reference Design Report for 3 W NonIsolated Constant Current LED Driver Using LNK306DN Title Specification 85–265 VAC Input, 10 V, 300 mA Output Application LED Lighting / Bulb Retrofit Author Power Integrations Applications Department Document Number RDR-131


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    LNK306DN RDR-131 EN55022 components89 RDR-131 Power Integrations LNK306dn L03316-102-RM lnk306d lnk306 lnk30* an-37 crf253 MMST3904 TFT-200-22 PDF

    M3H-50

    Abstract: M3V-50
    Contextual Info: Three-Way Power Dividers 1 - 100 MHz and 50 - 300 MHz M3H-50/M3V-50 V2.00 TO-5-2 Features ● ● ● ● ● ● ● Ideal for High Density Packaging High Isolation VSWR: 1.3:1 Max. Impedance: 50 Ohms Nom. Maximum Power Rating or Input Power: 1 W. Max. Internal Load Dissipation: 0.05 W. Max.


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    M3H-50/M3V-50 MIL-STD-202 M3H-50 M3V-50 M3H-50 M3V-50 PDF

    Contextual Info: B048F240T30 B 048 F 240 M 30 BCMTM Bus Converter • 48 V to 24 V V•I Chip Bus Converter • Typical efficiency 96% • 300 Watt 450 Watt for 1 ms • 125°C operation (TJ) • High density – 1017 W/in3 • <1 µs transient response • Small footprint – 260 W/in2


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    B048F240T30 B048F240T30 PDF

    pwm lm358 mosfet

    Abstract: LM324 TO 220 Package High current N CHANNEL MOSFET 200 Amp n channel mosfet circuit diagram of OP amp based circuits
    Contextual Info: P W R - N C H 4 0 1 -r-w -s i» 4-Channel MOSFET Array 400 V - 335 mA per channel POWER INTEGRATIONS INC 37E D • POWER INTEGRATIONS, INC. 726^25^ GOQOOTS 5 * P I N Product Highlights 150 V 4 open-drain N-channel MOSFETs per package • 200, 300, and 400 V versions


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    PWR-NCH401PUC1 PWR-NCH401PUC2 PWR-NCH401PUC3 24-PIN OT070° OT0700C PWR-NCH401 pwm lm358 mosfet LM324 TO 220 Package High current N CHANNEL MOSFET 200 Amp n channel mosfet circuit diagram of OP amp based circuits PDF

    IDG 600

    Abstract: AN504 CLC410 DG884 DG884DN HP4192A Si582 Si584
    Contextual Info: DG884 Vishay Siliconix 8 x 4 Wideband Video Crosspoint Array FEATURES BENEFITS Routes Any Input to Any Output Wide Bandwidth: 300 MHz Low Crosstalk: −85 dB @ 5 MHz Double Buffered TTL-Compatible Latches with Readback D Low rDS on : 45 W D Optional Negative Supply


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    DG884 DG884 08-Apr-05 IDG 600 AN504 CLC410 DG884DN HP4192A Si582 Si584 PDF

    MSM7507-01

    Abstract: MSM7507-01GS-VK MSM7507-02 MSM7507-03 MSM7508B MSM7509B
    Contextual Info: O K I Semiconductor MSM7507-01702/03 Single Rail CODEC GENERAL DESCRIPTION T he MSM7507 is a single-channel COD EC CM O S IC for v oice sig n als ran g in g from 300 to 3400 H z w ith filters for A /D a n d D /A conversion. D esigned especially for a sin g le-p o w er su p p ly a n d lo w -p o w er ap p licatio n s, th e device is


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    MSM7507-01702/MSM7507-01703 MSM7507 MSM7508B MSM7509B. b7242M0 MSM7507-01 MSM7507-01GS-VK MSM7507-02 MSM7507-03 MSM7509B PDF

    PKF 4110B SI

    Contextual Info: E Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION Prepared also subject responsible if other EZIWSON Approved 1 (1) (4) No. Checked PKR 4000B series Direct Converters Input 36-75 V, Output up to 5 A / 15 W 1/1301-BMR6401421+ 00152-EN/LZT146 300 Uen Specification


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    1/1301-BMR6401421+ 00152-EN/LZT146 4000B MTB25 J-STD-020C PKF 4110B SI PDF

    sfh817a

    Abstract: 1n4007 sod123 D217 OPTO NCP1397 RECTIFIER DIODE D100 diode zd201 opto d206 NCP1252 zener diode 1206 6v8 schematic diagram lcd tv sharp inverter
    Contextual Info: TND401/D Rev. 2, September 2010 300 W High Performance SLIM LCD TV Power Solution Jean-Paul Louvel LCD TV System Applications 2010 ON Semiconductor Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated


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    TND401/D 680uH EFD30 NCP1052P44G TP207ST PH9080NL sfh817a 1n4007 sod123 D217 OPTO NCP1397 RECTIFIER DIODE D100 diode zd201 opto d206 NCP1252 zener diode 1206 6v8 schematic diagram lcd tv sharp inverter PDF

    Contextual Info: Advance Data Sheet December 1996 microelectronics group Lucent Technologies Bell Labs Innovations FW300-Series Power Modules: 36 Vdc to 75 Vdc Input; 300 W Features • Size: 61.0 mm 2.4 in. x 116.8 mm (4.6 in.) x 13.5 mm (0.5 in.) ■ Operating case temperature range:


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    FW300-Series 73/23/EEC 93/68/EEC DS96-025EPS DS94-061EPS) 00025b? PDF

    6j5 tube

    Abstract: TUBE 6J5 6j5gt 6J5GT tube 6J5G "6j5" 6j1 tube 6J56 6j5 general electric 6j1 electron tube
    Contextual Info: 6J5.6J5GT TUMG-SOL •V TRIODE t- 1 ^ -* MAX MT8 2 * ' «. MAX 2*§* MAX. COATED UNIPOTENTIAL CATHODE HEATER 6 .3 VOLTS MA X 300 MA. AC OR DC METAL SHELL GLASS BULB ANY MOUNTING PO SITIO N S M A LL 6 P IM W A FE R OCTAL S M A LL W A FER 6 P I N OCTAL M ET AL S L E E V E


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    h6-210 6j5 tube TUBE 6J5 6j5gt 6J5GT tube 6J5G "6j5" 6j1 tube 6J56 6j5 general electric 6j1 electron tube PDF

    INF-8077i

    Abstract: INF8077i PLRXXL-SC-S43-C1 JDSU 850nm VCSEL application SFf-8431 10 gb laser photodiode PIN photodiode 850nm schematic diagram for ac line voltage conditioner VCSEL 10g CHIP 850NM
    Contextual Info: COMMUNICATIONS MODULES & SUBSYSTEMS RoHS Compliant XFP Optical Transceiver —850 nm for up to 300m Reach PLRXXL Series Key Features • 850 nm optical signals for up to 300 m reach over enhanced multimode fiber • Low power consumption < 1.5 W max • 0°C to 70°C case temperature operating range


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    10GBASE-SR 10GBASE-SW 1-800-498-JDSU 800-5378-JDSU PLRXXL-SC-S43-C1 10GbE 498-JDSU 5378-JDSU PLRXXL-SC-S43-C1 INF-8077i INF8077i JDSU 850nm VCSEL application SFf-8431 10 gb laser photodiode PIN photodiode 850nm schematic diagram for ac line voltage conditioner VCSEL 10g CHIP 850NM PDF

    2n3739

    Abstract: 2N3738 2n3739 motorola 2N6425
    Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b3fe.725M MOTOROLA TECHNICAL DATA HIGH VOLTAGE SILICON POWER TRANSISTORS POWER TRANSISTORS NPN SILICON 2 2 5 ,3 0 0 VO LTS 20 W ATTS Collector-Emitter Sustaining Voltage VCEOfsus = 225 Vdc 5 -° mAdc 2N3738 } = 300 Vdc @ l c = 5.0 mAdc (2N3739)


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    2N3738 2N3739 r-37-/7 2N3738 2N3739) b3fci7a54 2N3738, 2n3739 2n3739 motorola 2N6425 PDF

    Contextual Info: Preliminary V•I Chip Bus Converter Module B384F120T30 BCM V•I Chip – BCM Bus Converter Module TM • 384 V to 12 V V•I Chip Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1036 W/in3


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    B384F120T30 PDF

    Contextual Info: IBC Module IB054E120T32N1-00 4:1 Intermediate Bus Converter Module: Up to 300 W Output Features • Input: 36 – 60 Vdc • 97.6% peak efficiency • Output: 12.0 Vdc at 48 Vin • Low profile: 0.38” height above board • Output current up to 32 A • Industry standard 1/8 Brick pinout


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    IB054E120T32N1-00 IB054E120T40N1-00 PDF

    Contextual Info: IBC Module IB054E096T40N1-00 5:1 Intermediate Bus Converter Module: Up to 300 W Output Features Size: 2.30 x 0.9 x 0.38 in 58,4 x 22,9 x 9,5 mm • Input: 36 – 60 Vdc • 97.4% peak efficiency • Output: 9.6 Vdc at 48 Vin • Low profile: 0.38” height above board


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    IB054E096T40N1-00 IB054E096T48N1-00 PDF

    MICRO switch hall Sensor

    Abstract: hall sensor magnet 4 terminals 103SR12A-3
    Contextual Info: 6 TO 2 4 VDC SOURCING 24 GAUGE CONDUCTOR WI R E LEADS 3 / A . 2 4 0 ± . 0 3 0 ( 3) 6 0 .0 0 0 ± .300(3) rv3Yi 5/32-32 UNS-2A i 0 0 0 = h . 040 HE X N U T ± SENSING (2) FACE CO • < CNj Od o CO CO o S E N S O R W I L L BE L O C A T E D ANYWHERE W I T H I N . 0 2 5 0


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    C095082A 26JUL99 103SR12A-3 MICRO switch hall Sensor hall sensor magnet 4 terminals 103SR12A-3 PDF

    crystal generator 1GHz

    Abstract: RF GEN 13.56MHz 433 to 450 mhz rf amplifier module AS3977 CFR47 MO-220 433.92MHz loop antenna design AS3977-TPD Murata-GRM1885C1H4R7CZ01
    Contextual Info: AS3977 D ata She et M u l t i - C h a n n e l N a r r o w b a n d F S K Tr a n s m i t t e r 1 General Description Main Characteristics The AS3977 is a low-power fully integrated ETSI, FCC and ARIB compliant FSK transmitter capable of operating at any ISM frequency in the range of 300 to


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    AS3977 AS3977 20dBm 10dBm. crystal generator 1GHz RF GEN 13.56MHz 433 to 450 mhz rf amplifier module CFR47 MO-220 433.92MHz loop antenna design AS3977-TPD Murata-GRM1885C1H4R7CZ01 PDF

    EL85

    Abstract: Mullard 2x15
    Contextual Info: O U T P U T PENTODE Output pentode rated for 6 W anode dissipation intended for use in mobile equipment as a r.f. amplifier at frequencies up to 120 M c /s or as an a.f. output valve. EL85 HEATER V„ lh C A P A C IT A N C E S ca_gi Cm Cout 6.3 200 V mA < 0 .2


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    120Mc/s 120Mcjs EL85 Mullard 2x15 PDF

    Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTD882 EPITAXIAL PLANAR NPN TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING FEATURES • Complementary to KTB772. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage 40 V V CBO Collector-Emitter Voltage


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    KTD882 KTB772. Cycled50% UUINTUNU01 PDF