300 KHZ PWM 8 PIN IC Search Results
300 KHZ PWM 8 PIN IC Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| SCC433T-K03-004 | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor | |||
| MRMS791B | Murata Manufacturing Co Ltd | Magnetic Sensor | |||
| SCC433T-K03-05 | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor | |||
| SCC433T-K03-PCB | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor on Evaluation Board | |||
| D1U54T-M-2500-12-HB4C | Murata Manufacturing Co Ltd | 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR |
300 KHZ PWM 8 PIN IC Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: S-8355/56/57/58 Series www.sii-ic.com STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER Rev.8.0_00 Seiko Instruments Inc., 2002-2014 The S-8355/56/57/58 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage |
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S-8355/56/57/58 S-8355/57 S-8356/58 | |
pin diagram of 8355
Abstract: s-8357h52mc 1824 ic 8355 S-8355M50MC S-8355M50MC-MDJ-T2 sot-23-5 321 nichicon capacitor bd shindengen MC
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S-8355/56/57/58 S-8355/57 S-8356/58 pin diagram of 8355 s-8357h52mc 1824 ic 8355 S-8355M50MC S-8355M50MC-MDJ-T2 sot-23-5 321 nichicon capacitor bd shindengen MC | |
transistor BD 329
Abstract: 6-pin SNB 13003 E TRANSISTOR transistor BD 325
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S-8355/56/57/58 S-8355/57 S-8356/58 transistor BD 329 6-pin SNB 13003 E TRANSISTOR transistor BD 325 | |
transistor sd 13003
Abstract: 4R7 inductor sd 13003 transistor 13003 sd TRANSISTOR 13003 TRANSISTOR equivalent pnp seiko 320 240 CDRH6D28-100 MA2Q737 S-8540 S-8541
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S-8540/8541 S8540 S-8541 S-8540 transistor sd 13003 4R7 inductor sd 13003 transistor 13003 sd TRANSISTOR 13003 TRANSISTOR equivalent pnp seiko 320 240 CDRH6D28-100 MA2Q737 | |
SiC762CD
Abstract: SiC762 100C MLP66-40 intel drMOS compliant X640P
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SiC762CD 18-Jul-08 SiC762 100C MLP66-40 intel drMOS compliant X640P | |
IHLP5050FDER
Abstract: drMOS compatible SiC762CD
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SiC762CD 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IHLP5050FDER drMOS compatible | |
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Contextual Info: SiC762CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI |
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SiC762CD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiC762CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI |
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SiC762CD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiC762CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI |
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SiC762CD 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SiC762CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI |
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SiC762CD 11-Mar-11 | |
100C
Abstract: MLP66-40 MOSFET Device Effects on Phase Node Ringing in VR SiC76 SiC769ACD
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SiC769ACD 18-Jul-08 100C MLP66-40 MOSFET Device Effects on Phase Node Ringing in VR SiC76 | |
S8337ACBC
Abstract: FT008-A-P-SD-1 LDR655312 CSP-45 kz41 S8338AC
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S-8337/8338 S-8337 S8337ACBC FT008-A-P-SD-1 LDR655312 CSP-45 kz41 S8338AC | |
MLP66-40
Abstract: SiC769CD sic769cd-t1-e3 MOSFET Device Effects on Phase Node Ringing
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SiC769CD 18-Jul-08 MLP66-40 sic769cd-t1-e3 MOSFET Device Effects on Phase Node Ringing | |
8333CContextual Info: S-8333 Series www.sii-ic.com STEP-UP, FOR LCD BIAS SUPPLY, 1-CHANNEL, PWM CONTROL SWITCHING REGULATOR CONTROLLER Rev.4.0_00 Seiko Instruments Inc., 2004-2010 The S-8333 Series is a CMOS step-up switching regulator which mainly consists of a reference voltage circuit, an oscillator, |
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S-8333 8333C | |
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S10011
Abstract: drMOS compatible
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SiC769ACD 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S10011 drMOS compatible | |
SiC76Contextual Info: SiC769ACD Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC769ACD is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power |
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SiC769ACD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SiC76 | |
MLP66-40
Abstract: SiC769CD SiC769CD-T1-E3
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SiC769CD 18-Jul-08 MLP66-40 SiC769CD-T1-E3 | |
MLP66-40Contextual Info: SiC769ACD Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC769ACD is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power |
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SiC769ACD 11-Mar-11 MLP66-40 | |
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Contextual Info: SiC779 Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC779 is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power |
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SiC779 SiC779 11-Mar-11 | |
S1-0248
Abstract: D2140
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SiC769CD 18-Jul-08 S1-0248 D2140 | |
SiC769CD
Abstract: 100C MLP66-40 SiC769CD-T1-E3 IHLP-5050EZ SiC769DB intel drMOS compliant MOSFET Device Effects on Phase Node Ringing in VR
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SiC769CD 18-Jul-08 100C MLP66-40 SiC769CD-T1-E3 IHLP-5050EZ SiC769DB intel drMOS compliant MOSFET Device Effects on Phase Node Ringing in VR | |
hzp16
Abstract: tlp521-3 HA16107P TLP521 HA16111 AC transformer current limiter equivalent for ic ha16107p HA16109p HA16109 DFG1C8
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HA16107P/FP, HA16108P/FP HA16109P/FP, HA16111P/FP HA16108P/FP, HA16107 hzp16 tlp521-3 HA16107P TLP521 HA16111 AC transformer current limiter equivalent for ic ha16107p HA16109p HA16109 DFG1C8 | |
grm1882c1h
Abstract: C2012X5R1A106KT C1005X7R1C104KT MCH3406 marking code RB NR6028T NR6028T-2R2M S-8365 sot-23-6 step-down REGULATOR sot-23-6 pwm controller
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S-8365/8366 S-8365 S-8366 grm1882c1h C2012X5R1A106KT C1005X7R1C104KT MCH3406 marking code RB NR6028T NR6028T-2R2M sot-23-6 step-down REGULATOR sot-23-6 pwm controller | |
s8550 TRANSISTOR equivalent
Abstract: S8550 equivalent equivalent transistor 8550 transistor s8550 equivalent S-8520E33 TM6201 seiko 320 240 toyota CD54 S-8520
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S-8520/8521 S-8520 S-8521 s8550 TRANSISTOR equivalent S8550 equivalent equivalent transistor 8550 transistor s8550 equivalent S-8520E33 TM6201 seiko 320 240 toyota CD54 | |