300 AMP MOSFET Search Results

IRHNJ9130

Abstract: DIODE SMD 10A FR001 FR-0016
Contextual Info: SFRC9130S.5B Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 10 AMP /100 Volts 300 mΩ Radiation Tolerant P-Channel MOSFET

Contextual Info: SFF40N30M SFF40N30Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 40 AMP / 300 Volts 0.10 Ω N-Channel Power MOSFET Part Number / Ordering Information 1/

FT0013A

Abstract: FT001 IRF9130 mosfet IRF9130 SFX9130J
Contextual Info: SFX9130J Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 10 AMP /100 Volts 300 mΩ P-Channel MOSFET TO-257 Features: • •

IXTH40N30

Abstract: SFF40N30N SFF40N30P
Contextual Info: mi PRELIMINARY # SFF40N30N SFF40N30P SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 40 AMP 300 VOLTS Designer’s Data Sheet 0.10 Q N-CHANNEL POWER MOSFET FEATURES: Rugged construction with polysilicon gate

Contextual Info: SML75SUZ03B MECHANICAL DATA Ultrafast Recovery Diode 300 Volt, 75 Amp All Dimensions are in Millimeters Back of Case Cathode TECHNOLOGY The planar passivated and standard ultrafast recovery SML 75SUZ03B diode features a triple charge control action utilising

SFX40N30MDB

Abstract: TO-254DB
Contextual Info: a « ja s » ' §S II- PRELIMINARY SFX40N30MDB SOLID STATE DEVICES, INC LV-: 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 40 AMP 300 VOLTS 0.09 Q. N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES:

high voltage diode T35

Abstract: T35 diode diode T35 DDD1013 OMD100F60HL OMD120L60HL OMD240N10HL OMD300N06HL TG73
Contextual Info: OMD120L60HL Preliminary Data Sheet OMD300N06HL OMD240N10HL OMDIOOF6OHL HALF-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 100 To 300 Amp Modules With Internal Gate Drive, Half-Bridge Configuration FEATURES • • • • •

Contextual Info: SML75EUZ03S SEME LAB 3 D PAK Package Enhanced Ultrafast Recovery Diode 300 Volt, 75 Amp TECHNOLOGY Back of Case Cathode The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising SML SML 10SUZ12D 75EUZ03S

IXTH40N30

Abstract: SFF40N30M SFF40N30Z
Contextual Info: PRELIMINARY SOLID STATE DEVICES, INC m n 11 SFF40N30M SFF40N30Z — 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 40 AMP 300 VOLTS 0.10 Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with polysilicon gate

100F60

Abstract: FTC 960 OMS100F60HL OMS120L60HL OMS240N10HL OMS300N06HL 12,000 volt 50 amp diode
Contextual Info: OMS120L60HL Preliminary Data Sheet OMS300N06HL OMS24QN1OHL OMSIOOF6OHL HALF-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 100 To 300 Amp Modules, Half-Bridge Configuration FEATURES • • • • • Isolated Heat Sink Low Inductance Design

OMS100F60HL

Abstract: OMS120L60HL OMS240N10HL OMS300N06HL
Contextual Info: OMS120L60HL Preliminary Data Sheet OMS300N06HL OMS240N10HL OMS100F60HL HALF-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 100 To 300 Amp Modules, Half-Bridge Configuration FEATURES • • • • • Isolated Heat Sink Low Inductance Design

Contextual Info: SML75SUZ03B SEME LAB TO-247 Package Back of Case Cathode Ultrafast Recovery Diode 300 Volt, 75 Amp TECHNOLOGY The planar passivated and standard ultrafast recovery SML 75SUZ03B diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

2 microfarad 400v capacitor

Abstract: 220 microfarad 25v capacitor 100 microfarad 400v capacitor capacitor 220 microfarad MSK130
Contextual Info: ISO-9001 CERTIFIED BY DESC M.S.KENNEDY CORP. ULTRA HIGH VOLTAGE HIGH SPEED DIFFERENTIAL OP-AMP 130 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Wide Supply Voltage Range 15V to 400V Fast Slew Rate - 300 V/µS Typ. FET Input - Accurate DC Specifications

Contextual Info: SML75EUZ03B SEME LAB TO-247 Package Back of Case Cathode Enhanced Ultrafast Recovery Diode 300 Volt, 75 Amp TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 75EUZ03B diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

SML20SUZ03SC

Abstract: power Diode 20A 20a ultra fast diode ANODE COMMON 10A 600A DC diode with heat sink
Contextual Info: SML20SUZ03SC SEME LAB Ultrafast Recovery Diode 300 Volt, 2 x 20 Amp D3 PAK Package Back of Case Cathode TECHNOLOGY SML SML 10SUZ12D 20SUZ03SC The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

Contextual Info: SML75EUZ03JD SEME LAB SOT-227 Package 1- Cathode 2 Enhanced Ultrafast Recovery Diode 300 Volt, 2 x 75 Amp 2- Anode 2 TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 7 5 E U Z 0 3 JD diode features a triple charge control action utilising

Contextual Info: SML75SUZ03S SEME LAB 3 D PAK Package Ultrafast Recovery Diode 300 Volt, 75 Amp TECHNOLOGY Back of Case Cathode The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising SML SML 10SUZ12D 75SUZ03S Semelab’s Graded Buffer Zone technology combined with

L9939

Abstract: OPZ91 0P291 0P491 0P191
Contextual Info: ANALOG DEVICES Micropower Single-Supply Rail-to-Rail Input/Output Op Amps 0P191/0P291/0P491 FEATURES Single-Supply Operation: 2.7 V to 12 V Wide Input Voltage Range Rail-to-Rail Output Swing Low Supply Current: 300 ^A/Amp Wide Bandwidth: 3 MHz Slew Rate: 0.6 V/^s

d2499

Abstract: 1k85 blood pressure circuit schematic OP291G notch filter schematic op491 OP191GS OP191GS-REEL OP291 OP491
Contextual Info: Micropower Single-Supply Rail-to-Rail Input/Output Op Amps OP191/OP291/OP491 FEATURES Single-Supply Operation: 2.7 V to 12 V Wide Input Voltage Range Rail-to-Rail Output Swing Low Supply Current: 300 ␮A/Amp Wide Bandwidth: 3 MHz Slew Rate: 0.5 V/␮s Low Offset Voltage: 700 ␮V

74 OP Amp

Abstract: c1970 transistor schematic op491 R1220 transistor c1970 D1399
Contextual Info: a Micropower Single-Supply Rail-to-Rail Input/Output Op Amps OP191/OP291/OP491 FEATURES Single-Supply Operation: 2.7 V to 12 V Wide Input Voltage Range Rail-to-Rail Output Swing Low Supply Current: 300 µA/Amp Wide Bandwidth: 3 MHz Slew Rate: 0.5 V/µs Low Offset Voltage: 700 µV

c1970 transistor

Abstract: OP291s RXA14 op491 die OP2916
Contextual Info: a Micropower Single-Supply Rail-to-Rail Input/Output Op Amps OP191/OP291/OP491 FEATURES Single-Supply Operation: 2.7 V to 12 V Wide Input Voltage Range Rail-to-Rail Output Swing Low Supply Current: 300 µA/Amp Wide Bandwidth: 3 MHz Slew Rate: 0.5 V/µs Low Offset Voltage: 700 µV

300 Amp mosfet

Abstract: mosfet 400 amp MOSFET FOR 100khz SWITCHING APPLICATIONS 50 Amp Mosfet dual jfet vhf jfet 133 jfet transistor mosfet amp DUAL JFET Pch low voltage mosfet switch 3 amp
Contextual Info: FIELD EFFECT TRANSISTORS FET NTE Type No. Polarity and Material Description and Application 132 JFET N-CH 133 JFET N-CH 221 Dual Gate MOSFET N-CH 222 Dual Gate MOSFET N-CH 312 JFET N-CH JFET P-CH 326 451 452 JFET N-CH JFET N-CH 454 Dual Gate MOSFET N-CH

MGCF21

Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount

marking K1 sot363

Abstract: AGC-10 BG3123 BG3123R VPS05604 152V16
Contextual Info: BG3123. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stages for UHF and VHF -tuners e.g. NTSC, PAL • Optimized for UHF (amp. B) and VHF (amp. A) 2 • Integrated gate protection diodes 3 1 VPS05604 • High AGC-range, low noise figure, high gain