300 348 Search Results

TRANSISTOR BC 384

Abstract: bc 357 transistor transistor BC 336 TRANSISTOR BC 413 transistor BC 310 TRANSISTOR BC 321 bc 357 transistor pin TRANSISTOR BC 256 transistor bc 318 BC347
Contextual Info: 6091788 MICRO ELECTRO N I C S f.QRP 05 _ 820 0 0 6 4 4 D E j b O c] 1 7 ñ ñ 0 7 1 2 ^ - / 7 000Gb44 E | Low Level and General Purpose Amplifiers P O LA R IT Y CASE 251 252 253 256 257 P P P P P TO-92F TO-92F TO-92F TO-92F TO-92B 300 300 300 300 300

100-FPT

Abstract: 100-SB01 100-SA11 100-SB11 100-FB11 100-DL420 193-EC1ZZ allen-bradley 100JE ECE contactor 100-DMA00
Contextual Info: Bulletin 300 NEMA AC Contactors and Components Selection Guide Bulletin 300 NEMA AC Contactors Selection Guide Table of Contents Description Page NEMA AC Contactors Bulletin 300 Feed-Through Wiring For Motor Loads . . . . . . . . . . . . . 3 Bulletin 193-EE — E1 Plus Solid-State Overload Relay . . . . . . . . . .

2sc9012

Abstract: K2411 SC9012 K2811 K2610 TM256 Ko611 IC 9014
Contextual Info: SC9012 9012 SC9012 CMOS 32 256 SC9012 6 SC9012 PCB SC9012 SOP-20-300-1.27 * CMOS * * * 32 8 256 SC9012 SOP-20-300-1.27 *6 * LED * * * * VCD 2.1 http: www.silan.com.cn 2005.12.15 11 SC9012 Tamb=25°C VDD -0.3 ~ 5.0 V VIN VSS-0.3~VDD+0.3 V -20 mA PD 300 mW

Contextual Info: Agilent 2-Port and 4-Port PNA-L Network Analyzer N5239A 300 kHz to 8.5 GHz N5231A 300 kHz to 13.5 GHz N5232A 300 kHz to 20 GHz Data Sheet and Technical Specifications Documentation Warranty THE MATERIAL CONTAINED IN THIS DOCUMENT IS PROVIDED "AS IS," AND IS SUBJECT TO BEING CHANGED,

336 305

Abstract: Network on Chip, telecom PEB2045 DS2141A DS2143 DS2152 DS2153 DS2154 DS2172 DS21Q42
Contextual Info: Application Note 300 Telecom Application Notes Index www.dalsemi.com Telecom application notes can be found in the numerical listing at 300 through 399. This index is updated periodically to show by category what is in the numerical listing. There may be notes in the numerical

DA830

Abstract: 001a 0.5-4B cr 5228 tms320da8 A/diac da830
Contextual Info: OMAPL137-HT SPRS677 – FEBRUARY 2012 www.ti.com Low-Power Applications Processor Check for Samples: OMAPL137-HT 1 Low-Power Applications Processor 1.1 Features 12345 • Highlights – Dual Core SoC • 300-MHz ARM926EJ-S RISC MPU • 300-MHz C674x™ VLIW DSP

Contextual Info: NOP12810 1200/600/300/200 DPI High-Speed Photodiode Array Description http://onsemi.com The NOP12810 photodiode array PDA provides selectable 1200, 600, 300 and 200 dot per inch (dpi) resolution. The sensor contains an on−chip output amplifier, internal power−down capability and parallel

stc 1740

Abstract: mfj 752 programme counter bit length
Contextual Info: Section 1 Overview 1.1 Overview The H8/3297 Series of single-chip microcomputers features an H8/300 CPU core and a complement of on-chip supporting modules implementing a variety of system functions. The H8/300 CPU is a high-speed processor with an architecture featuring powerful bit-manipulation

IRFP260 equivalent

Abstract: IXTD1N80-1T irfp450 equivalent Irfp250 irfp460 IRFP460 equivalent IXTD50N20-7X IXTD05N100-1T IXTD67N10-7X x315 IRFP254 equivalent
Contextual Info: Standard Power MOSFET and MegaMOSTMFET Chips N-Channel Enhancement-Mode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss typ. trr typ. V Ω IXTD67N10-7X IXTD75N10-7X 100 0.025 0.02 5 5 3700 3700 300 300 IXTD42N20-7X IXTD50N20-7X IFRC250-5X IFRC260-6X 200

512 eeprom dip 32-pin

Contextual Info: MF8512SC-250/300 Issue 1.0 September 1969 512 K x 8 FLASH EE P R O M MF8512SC M o d u le . ADVANCE PRODUCT INFORMATION 524,288 x 8 CMOS FLASH™ EEPROM Features Pin Definition Access Times of 250/300 ns Industry Standard 32 pin DIL Footprint Operating Power 400 mW

max 8770

Abstract: MOS 6526 SR299 diode 3562 SR300 IC 6994 14 pin SR300 datasheet what is product ON 4914
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT µ PD16708 300-OUTPUT TFT-LCD GATE DRIVER DESCRIPTION The µ PD16708 is a TFT-LCD gate driver equipped with 300-output lines. It can output a high-gate scanning voltage in response to CMOS level input because it provided with a level-shift circuit inside the IC circuit.

LN2054

Abstract: 1N1660 1N1661 1N1670 1N1671 1N2054 1N2055 1N3260 1N3261 1N4044
Contextual Info: Silicon Power Rectifier N4044—1N4056 rs * 1 Dim ï M illim eter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S - c -H Inches M l- 1.218 1.350 5 .300 .793 .300 -.660 .338 .665 -.050 3 / 4 - 1 6 UNF 1.250 3 0.9 4 1.375 34.29 5.900

tn sot-363

Abstract: TVS so8 GMS05
Contextual Info: MULTI-COMPONENT T ran s Z orb TVS D e v ic e Function Package Type V rwm V| V(BR (V) P p m (W) Circuit GL05-GL24 Low Capacitance TVS SOT-23 5.0 - 24 6 - 26.7 300<2» Fig. 1 339 GL05W-GL24W Low Capacitance TVS SOD-123 5 .0 -2 4 _ 6 -2 6 .7 300® % 2

Contextual Info: MF8512SC-250/300 Issue 1.0 September 1989 iv y ic ro ir ^ 512 K x 8 F L A S H im E E P R O M Mo d ul e . M r o b i ^ b U ADVANCE PRODUCT INFORMATION 524,288 x 8 CMOS FLASH EEPROM Features Pin Definition Access Times of 250/300 ns Industry Standard 32 pin DIL Footprint

C17200

Abstract: C17300
Contextual Info: REVISIONS DESCRIPTION REV 01 i RETAINING CLIP .316 DIA 8.0mm OSP JACK +.003 -.000 DIA .300 DIA REF (7.6mm) OSM JACK (22.2mm) ELECTRICAL 50 Interface Dimensions Temperature Rating -65°C to +165°C OSM MIL-STD-348A, Fig 310.2 Volt Rating (VRMS MAX) OSP SEE CATALOG

Contextual Info: SPIRIT1 Low data rate, low power sub-1GHZ transceiver Datasheet — preliminary data Features • Frequency bands: 150-174 MHz, 300-348 MHz, 387-470 MHz, 779-956 MHz ■ Modulation schemes: 2-FSK, GFSK, MSK, GMSK, OOK, and ASK ■ Air data rate from 1 to 500 kbps

EN-13757-4

Abstract: ook deMODULATOR ghz receiver pll 169mhz spirit1 EN13757-4 wm-bus EN-13757 22851 EN137574 wireless encrypt
Contextual Info: SPIRIT1 Low data rate, low power sub-1GHZ transceiver Datasheet — production data Features • Frequency bands: 150-174 MHz, 300-348 MHz, 387-470 MHz, 779-956 MHz ■ Modulation schemes: 2-FSK, GFSK, MSK, GMSK, OOK, and ASK ■ Air data rate from 1 to 500 kbps

AS230-348LF

Abstract: AS230-348
Contextual Info: DATA SHEET AS230-348, AS230-348LF: SPDT 7 W T/R Switch 300 kHz–6 GHz The AS230-348 is an IC FET SPDT reflective switch in a low-cost plastic package. It features extremely high linearity, low insertion loss, with very low DC power consumption. Some standard

NSM11-58

Contextual Info: Tolerances 1-20=+/-0.2 20-30=+/-0.3 30-40=+/-0.4 40-50=+/-0.5 50-100=+/-0.75 100-300=+/-1.5 Angles=+/-1 Dimensions are in Millimeters Notes: Change made to pin and and outer contact to support Mil-STD-348A, 402.1 5/17/04 ek 4 3 Revisions Description/Approved/Date

MJE15020

Abstract: DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment

2SA1046

Abstract: BU108 BU326 BU100 BD262 2sb688 y 2n5632 bd876
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6497 2N6498* High Voltage NPN Silicon Power Transistors *Motorola Preferred Device 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, switching regulators and line–operated

Contextual Info: VS-GT300YH120N www.vishay.com Vishay Semiconductors DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology FEATURES • Trench IGBT technology with positive temperature coefficient • Low switching losses • Maximum junction temperature 150 °C

PD280 potentiometer

Abstract: C 2575 PL300 PD2310 300 348 PL310
Contextual Info: Winkelsensoren potentiometrisch Rotary Sensors potentiometric Baureihe Series GL W AL P L I 30, PL240, PL300, PL310 Messbereich Efectrcal angle 150.354 0 340 s 300. .348 • Gehäusegröße Housing size 0 3 1 .7 4 m m 0 32 m m 0 13.22.2 m m Unabhängige Linearität

Contextual Info: VS-GT300YH120N www.vishay.com Vishay Semiconductors DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology FEATURES • Trench IGBT technology temperature coefficient with positive • Low switching losses • Maximum junction temperature 150 °C