3.5V HBT MMIC AMPLIFIER Search Results

MCH182F104ZK

Abstract: MCH185A100JK MCH185A8R2CK 500 watt amplifier schematic
Contextual Info: PRELIMINARY DATA SHEET EC2198 1.5 Watt Power Amplifier Cellular Band 3.5V POWER AMPLIFIER Description Features The EC2198 is a cellular band 820 to 960MHz MMIC power amplifier. It is fabricated with a highly reliable GaAs/InGaP HBT process technology. It operates from

AWT6105

Abstract: AWT6105M5
Contextual Info: AWT6105 Cellular Dual Mode AMPS/CDMA 3.5V/29dBm Linear Power Amplifier Module Advanced Product Information Rev. 2 V REF V The AWT6105 is a high power, high efficiency amplifier module for Dual Mode CDMA/AMPS wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC

HMC477MP86

Contextual Info: v00.0603 MICROWAVE CORPORATION HMC477MP86 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC477MP86 is an ideal RF/IF gain block & LO or PA driver for: P1dB Output Power: +15 dBm • Cellular / PCS / 3G

RMPA0950-78

Abstract: power amplifier mmic design high efficiency
Contextual Info:
 R aytheon Commercial E lectronics RMPA0950-78 3.5V Cellular CDMA MMIC Power Amplifier Module Description Features
Single supply voltage of +3.5V, nominal
Efficiency of 35%, typical, for CDMA average power out of 29 dBm
Low cost LCC package
Matched input and output module

trw RF POWER TRANSISTOR

Abstract: C33825 trw rf transistor trw 131* RF POWER TRANSISTOR TRW mmic HBT transistor RF2152 TA0032 POUT315 3.5V HBT MMIC Amplifier
Contextual Info: TA0032
 TA0032 RF2152: A 3V HBT Power Amplifier for CDMA/AMPS Handsets      
    The RF2152 is the latest addition to a family of power amplifiers introduced by RF Micro Devices RFMD utilizing GaAs HBT technology. This commercially proven

transistor 835

Abstract: HBT transistor TRW mmic RF2152 TA0032 trw rf transistor
Contextual Info: TA0032
 TA0032 RF2152: A 3V HBT Power Amplifier for CDMA/AMPS Handsets      
 Figure 1: PSSOP-16 Package Outline A high power, high efficiency, low cost power amplifier has been developed utilizing commercial gallium arsenide GaAs heterojunction bipolar transistor (HBT)

GSM 300

Abstract: Thomson-CSF semiconductor GMSK gsm Thomson-CSF amplifier athena THOMSON-CSF MICROWAVE TRANSISTORS Thomson-CSF AC52 AN21 AN35
Contextual Info: UMS United Monolithic Semiconductors Design of Power Amplifier in GaAs HBT A Company of : EADS Deutschland GmbH THOMSON-CSF UMS United Monolithic Semiconductors Summary: PA market Relevant criteria of PA Available Technologies Advantages of HBT technology

JUMPER-0603

Abstract: CGB98-900 INFINEON PART MARKING infineon marking L2 MMIC marking 81 TSSOP10 CGB98 C4 MMIC siemens inductor 15PF-0603
Contextual Info: GaAs MMIC CGB 98 Preliminary Datasheet * 3-stage GaAs GSM-HBT Power Amplifier *Operating voltage range: 2.7 to 6.0 V * Single supply voltage * Pout = 34.0dBm at Vcc=3.2V

RMPA1750-78

Abstract: RAYTHEON mhz rf amplifier module
Contextual Info:
 R aytheon Commercial E lectronics RMPA1750-78 3.0V CDMA MMIC Power Amplifier Module The RMPA1750-78 is a small outline, high efficiency power amplifier module for Korean PCS CDMA personal communication system applications. The Power Amplifier module is internally matched to 50 ohms which minimizes

RAYTHEON

Abstract: RMPA1950-78
Contextual Info:
 R aytheon Commercial E lectronics RMPA1950-78 3.0V PCS CDMA MMIC Power Amplifier Module The RMPA1950-78 is a small outline, high efficiency Power Amplifier module for PCS CDMA personal communication system applications. The Power Amplifier module is internally matched to 50 ohms which minimizes the use

RAYTHEON

Contextual Info:   5D\WKHRQ&RPPHUFLDO OHFWURQLFV RMPA2050-78 3.0V W-CDMA MMIC Power Amplifier Module Description The RMPA2050-78 is a small outline, high efficiency power amplifier module for W-CDMA personal communication system applications. The Power amplifier is a self contained 50 ohms matched module which reduces circuit

Contextual Info: HMC386LP4 / 386LP4E v04.1209 MMIC VCO w/ BUFFER AMPLIFIER, 2.6 - 2.8 GHz Typical Applications Features Low noise MMIC VCO w/Buffer Ampliier for: Pout: +5 dBm • Wireless Infrastructure Phase Noise: -114 dBc/Hz @100 kHz • Industrial Controls No External Resonator Needed

Contextual Info: AP1063 Cellular Band CDMA Power Amplifier Module 2004. May Preliminary AP1063 A /(B) is a Power Amplifier Module working for dual mode AMPS/CDMA cellular handset applications. The MMIC is manufactured on an advanced InGaP HBT technology and offers high linearity, high efficiency

HMC386LP4

Abstract: h386
Contextual Info: HMC386LP4 / 386LP4E v04.1209 MMIC VCO w/ BUFFER AMPLIFIER, 2.6 - 2.8 GHz Typical Applications Features Low noise MMIC VCO w/Buffer Amplifier for: Pout: +5 dBm • Wireless Infrastructure Phase Noise: -114 dBc/Hz @100 kHz • Industrial Controls No External Resonator Needed

3.5V HBT MMIC Amplifier

Contextual Info: ¿¡3 Stanford Microdevices Product Description SLN-187 Stanford M icrodevices’ SLN-187 is a high performance gal­ lium arsenide heterojunction bipolar transistor MMIC housed in a low-cost plastic drop-in package. A Darlington configu­ ration is used for broadband perform ance from DC-4.0 GHz.

AWT6109

Abstract: AWT6109M5
Contextual Info: AWT6109 KPCS CDMA 3.5V/28.5 dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • • • • • • • • • • InGaP HBT Technology High Efficiency 35% Typ Low Leakage Current (5µA) SMT Module Package Small Foot Print (6mm x 6mm)

HMC313

Abstract: HMC213 HMC361S8G HMC364S8G hmc362 HMC394LP4 HMC341 HMC361 HMC362S8G HMC363
Contextual Info: OFF-THE-SHELF INSIDE. HITTITE MICROWAVE CORPORATION SPRING/SUMMER 2001 New Prescalar Product Line Meets The Demands of Broadband Markets! Hittite announces ten 10 new prescalar standard products that operate from DC to 13GHz. Standard division ratios of two, four, and eight have

Contextual Info: RFUV1702 RFUV1702 17.7GHz TO 19.7GHz GaAs MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND 32 Features            1 GND 2 N/C GND 30 29 28 Q 27 N/C Vg1 26 25 24 VLPA12 23 N/C 90 RF Frequency: 17.7GHz to

Contextual Info: ¿5 Stanford Microdevices Product Description SLN-186 Stanford M icrodevices’ SLN-186 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mount plastic package. A Darlington configuration is used for broadband performance

Contextual Info: RFUV1702 RFUV1702 17.7GHz TO 19.7GHz GaAs MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND 32 Features            1 GND 2 N/C GND 30 29 28 Q 27 N/C Vg1 26 25 24 VLPA12 23 N/C 90 RF Frequency: 17.7GHz to

Contextual Info: Product Description SLN-186 Stanford Microdevices’ SLN-186 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mount plastic package. A Darlington configuration is used for broadband performance from DC-4.0 GHz.

SLN-186

Abstract: SLN-186-TR1 SLN-186-TR2 SLN-186-TR3
Contextual Info: Product Description SLN-186 Stanford Microdevices’ SLN-186 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mount plastic package. A Darlington configuration is used for broadband performance from DC-4.0 GHz.

SGA-3586

Contextual Info: Preliminary SGA-3586 Product Description DC-5000 MHz Silicon Germanium Cascadeable Gain Block Sirenza Microdevices’ SGA-3586 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high F T and excellent thermal

Contextual Info: RFUV1703 RFUV1703 21GHz TO 26.5GHz GaAs MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND 32 Features           1 GND 2 N/C GND 30 29 28 Q 27 N/C Vg1 26 25 24 VLPA12 23 N/C 90 RF Frequency: 21GHz to 26.5GHz