3-CHANNEL SWITCHING REGULATOR Search Results
3-CHANNEL SWITCHING REGULATOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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PQU650-12P | Murata Manufacturing Co Ltd | AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P | |||
MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN | |||
MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN | |||
MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN | |||
MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN |
3-CHANNEL SWITCHING REGULATOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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2SK2059Contextual Info: 2SK2059 L , 2SK2059 S Silicon N Channel MOS FET Application DPAK-1 High speed power switching Features • • • • 4 4 12 Low on–resistance High speed switching No Secondary Breakdown Suitable for Switching regulator, DC – DC converter 3 2, 4 12 3 |
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2SK2059 | |
Hitachi DSA001652Contextual Info: 2SK1880 L , 2SK1880(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline DPAK-1 4 4 1 1 2 3 2 3 D 1. Gate |
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2SK1880 D-85622 Hitachi DSA001652 | |
2SK2568Contextual Info: 2SK2568 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • • • • Low on–resistance High speed switching Low drive current Suitable for switching regulator and DC–DC converter S 2 1 G 1 2 3 3 1. Gate 2. Source Flange |
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2SK2568 2SK2568 | |
Contextual Info: 2SK1371.2SK1372 MMTtiEGS Ü01 3 3A 1 =l?fl blE D iH ITM SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • No Secondary Breakdown • Suitable for Switching Regulator and |
OCR Scan |
2SK1371 2SK1372 7c-25 2SK1372 50MITTANCE -2SK1371, 2SK1371, | |
2SK1275
Abstract: D0135
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OCR Scan |
Q0132Ã T0-220FM) Tc-25 2SK1275 D0135 | |
2SK1341
Abstract: 2SK1859 DSA003759
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2SK1859 2SK1341 2SK1859 DSA003759 | |
2SK2329
Abstract: Hitachi DSA00347
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2SK2329 Hitachi DSA00347 | |
Contextual Info: 2SK2019-01 N-channel MOS-FET FAP-IIA Series 500V > Features - 3Ω 3,5A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators |
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2SK2019-01 | |
2SK2019-01Contextual Info: 2SK2019-01 N-channel MOS-FET FAP-IIA Series 500V > Features - 3Ω 3,5A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators |
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2SK2019-01 2SK2019-01 | |
Contextual Info: 2SK2020-01MR N-channel MOS-FET FAP-IIA Series 500V > Features - 3Ω 3,5A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators |
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2SK2020-01MR | |
DIODE ED 34Contextual Info: TO SHIBA 2SK2350 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2350 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0 .3 |
OCR Scan |
2SK2350 DIODE ED 34 | |
Hitachi DSA001651Contextual Info: 2SK2418 L , 2SK2418(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter |
Original |
2SK2418 D-85622 Hitachi DSA001651 | |
Contextual Info: 2SK2329 L , 2SK2329(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 2.5 V gate drive device can be driven from 3 V source • Suitable for Switching regulator, DC-DC converter |
OCR Scan |
2SK2329 2SK2329Ã | |
Hitachi DSA001652Contextual Info: 2SK2322 L , 2SK2322(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter |
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2SK2322 D-85622 Hitachi DSA001652 | |
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TPH4R008NHContextual Info: TPH4R008NH MOSFETs Silicon N-channel MOS U-MOS-H TPH4R008NH 1. Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 18 nC (typ.) |
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TPH4R008NH TPH4R008NH | |
Contextual Info: TPH8R008NH MOSFETs Silicon N-channel MOS U-MOS-H TPH8R008NH 1. Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 13 nC (typ.) |
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TPH8R008NH | |
Contextual Info: TPH8R80ANH MOSFETs Silicon N-channel MOS U-MOS-H TPH8R80ANH 1. Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 13 nC (typ.) |
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TPH8R80ANH | |
TPN30008NHContextual Info: TPN30008NH MOSFETs Silicon N-channel MOS U-MOS-H TPN30008NH 1. Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 4.1 nC (typ.) |
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TPN30008NH TPN30008NH | |
Contextual Info: TPN3300ANH MOSFETs Silicon N-channel MOS U-MOS-H TPN3300ANH 1. Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 4.5 nC (typ.) |
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TPN3300ANH | |
TPN13008NHContextual Info: TPN13008NH MOSFETs Silicon N-channel MOS U-MOS-H TPN13008NH 1. Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 6.7 nC (typ.) |
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TPN13008NH TPN13008NH | |
DIODE marking EG 94Contextual Info: TPN3300ANH MOSFETs Silicon N-channel MOS U-MOS-H TPN3300ANH 1. Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 4.5 nC (typ.) |
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TPN3300ANH DIODE marking EG 94 | |
JRC 2355
Abstract: PWM Power Control Circuit APAA NJM2355 dead time control
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OCR Scan |
NJM2355 NJM2355, NJM2355 ijm2355d 200-mA 100mA) JRC 2355 PWM Power Control Circuit APAA dead time control | |
Contextual Info: TO SH IBA 2SK3176 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2 S K 3 1 76 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS |
OCR Scan |
2SK3176 | |
2SJ387
Abstract: Hitachi DSA00347
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2SJ387 Hitachi DSA00347 |