3-CHANNEL SWITCHING REGULATOR Search Results

2SK2059

Contextual Info: 2SK2059 L , 2SK2059 S Silicon N Channel MOS FET Application DPAK-1 High speed power switching Features • • • • 4 4 12 Low on–resistance High speed switching No Secondary Breakdown Suitable for Switching regulator, DC – DC converter 3 2, 4 12 3

Hitachi DSA001652

Contextual Info: 2SK1880 L , 2SK1880(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline DPAK-1 4 4 1 1 2 3 2 3 D 1. Gate

2SK2568

Contextual Info: 2SK2568 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • • • • Low on–resistance High speed switching Low drive current Suitable for switching regulator and DC–DC converter S 2 1 G 1 2 3 3 1. Gate 2. Source Flange

Contextual Info: 2SK1371.2SK1372 MMTtiEGS Ü01 3 3A 1 =l?fl blE D iH ITM SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • No Secondary Breakdown • Suitable for Switching Regulator and

2SK1275

Abstract: D0135
Contextual Info: MMTbSGS Q0132Ö4 7Tb • H I T 4 2SK1275SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES # Low On-Resistance # High Speed Switching 1. # Low Drive Current # No Secondary Breakdown # Suitable for Switching Regulator and Gate 2. D ra in 3. Source

2SK1341

Abstract: 2SK1859 DSA003759
Contextual Info: 2SK1859 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low Drive Current No secondary breakdown Suitable for Switching regulator Outline TO-3PFM D G 1 S 2 3 1. Gate 2. Drain

2SK2329

Abstract: Hitachi DSA00347
Contextual Info: 2SK2329 L , 2SK2329(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter

Contextual Info: 2SK2019-01 N-channel MOS-FET FAP-IIA Series 500V > Features - 3Ω 3,5A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK2019-01

Contextual Info: 2SK2019-01 N-channel MOS-FET FAP-IIA Series 500V > Features - 3Ω 3,5A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: 2SK2020-01MR N-channel MOS-FET FAP-IIA Series 500V > Features - 3Ω 3,5A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

DIODE ED 34

Contextual Info: TO SHIBA 2SK2350 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2350 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0 .3

Hitachi DSA001651

Contextual Info: 2SK2418 L , 2SK2418(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter

Contextual Info: 2SK2329 L , 2SK2329(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 2.5 V gate drive device can be driven from 3 V source • Suitable for Switching regulator, DC-DC converter

Hitachi DSA001652

Contextual Info: 2SK2322 L , 2SK2322(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter

TPH4R008NH

Contextual Info: TPH4R008NH MOSFETs Silicon N-channel MOS U-MOS-H TPH4R008NH 1. Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 18 nC (typ.)

Contextual Info: TPH8R008NH MOSFETs Silicon N-channel MOS U-MOS-H TPH8R008NH 1. Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 13 nC (typ.)

Contextual Info: TPH8R80ANH MOSFETs Silicon N-channel MOS U-MOS-H TPH8R80ANH 1. Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 13 nC (typ.)

TPN30008NH

Contextual Info: TPN30008NH MOSFETs Silicon N-channel MOS U-MOS-H TPN30008NH 1. Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 4.1 nC (typ.)

Contextual Info: TPN3300ANH MOSFETs Silicon N-channel MOS U-MOS-H TPN3300ANH 1. Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 4.5 nC (typ.)

TPN13008NH

Contextual Info: TPN13008NH MOSFETs Silicon N-channel MOS U-MOS-H TPN13008NH 1. Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 6.7 nC (typ.)

DIODE marking EG 94

Contextual Info: TPN3300ANH MOSFETs Silicon N-channel MOS U-MOS-H TPN3300ANH 1. Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 4.5 nC (typ.)

JRC 2355

Abstract: PWM Power Control Circuit APAA NJM2355 dead time control
Contextual Info: U b ò NJM2355 3 TW O OUTPUT HIGH VOLTAGE SWITCHING REGULATOR • GENERAL DESCRIPTION ■ PACKAGE OUTLINE New JRC's high voltage switching regulator, NJM2355, is a mono­ lithic high voltage 50V max operation integrated circuit consisting of two channel PWM controlers.

Contextual Info: TO SH IBA 2SK3176 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2 S K 3 1 76 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS

2SJ387

Abstract: Hitachi DSA00347
Contextual Info: 2SJ387 L , 2SJ387(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC - DC converter Outline