3/10 M 20A Search Results

SMD MARKING CODE aO9

Contextual Info: H YB39S64400/800/160BT L 64MBit Synchronous DRAM îlfîîl0Oil 64 M Bit S ynch ro n o u s DRAM • High Perform ance: M ultiple Burst Operation 7.5 -8 -10 Units fCKmax. 133 125 100 M Hz tC K 3 7.5 8 10 ns tA C 3 5.4 6 7 ns tC K 2 10 10 15 ns tA C 2 6 6 8

Contextual Info: AFF-20A-250 ELECTRONIC ATTENUATOR 10 to 5 00 M H z / 0 to 2 0 dB / M ulti-O ctave / O ptim ized fo r M inim im Phase Shift; 3 • Typ. / Fiatpack BIAS +15VDC CONTROL 0 TO 15V -A/VV INPUT O UTPUT PRINCIPAL SPECIFICATIONS Operating Frequency Range, MHz 10 - 100

Contextual Info: DRAWING No 5 3 - L M L I M 5 N 2 5 - 0 I0 I - 3 3 3 SHEET 2 OF Information Sheet IF 2 IN D0U6T - ASK p r NOT j TO SCALE THIRD ANGLE ALL PROJECTION DIMENS>ONS IN m m 29.00 -CONTACT 20. 00- No, 2 4 - - ± - x 3. 10 2,00 7 ^ <9- - — 7.70

04A21

Abstract: SD-5566 55b6 cr 6224 T AM 22A 1043 5566S SD5566 ru 94v0 circuit MOLEX mxj 8A
Contextual Info: 10 3 7 „8 20 39 3 3 „6 8 3 4 .8 2 9 .4 6 3 0 „6 LO CM 2 „6 8 co co 9 .6 S 4 .2 — 4 'ST DIM. A F I n n 14 II 5 1 F I n n 14 H5 1p in F I M 7|b M 10II 1 M M »il6 M m T n 4 2 1? F I n n 14 I 5 16^ M 8II9 M l"l 12 13 IS IT n n n M M F in 1BI 3 1 f,3| »i 6

TMP68020

Abstract: 68hc000 TMP68HC000P-16 TMP68HC000P10 TMP68000N-10 UC 2003 TMP68HC000N-10 TMP68HC000N-16 TMP68HC000Y-10 motorola 68HC000
Contextual Info: bDE ]> TOSHIBA UC/UP ^0^724^ 0ÜEM32M OOS m j Q S 3 TMP68000 / 68HC000 TO SH IBA 16- BIT MICROPROCESSOR TMP68000P-8 / TMP68000N-8 / TMP6800OY C-8 / TMP68HC000P-10 / TMP68HC000N-10 / TMP68HC000Y-10 / TMP68HC000F-10 / TMP68HC000T-10* / TMP68000P-12 TMP68000P-10 /

BUP37

Abstract: LE17
Contextual Info: SEMELAB BUP37 R e v e rs e B ias S O A 3 5 7 10 2 3 5 7100 3 3 5 7 1000 C o lle c to r T o E m itte r V o lta g e , Vce - V 01 2 3 5 1 0 2 3 5 10 2 3 5 100 2 3 5 C o lle c to r T o E m itte r V o lt a g e . V CE - V 1000 20 40 60 80 100 120 A m b ie n t T e m p e r a t u r e , T a - °C

2N4116

Abstract: 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957
Contextual Info: NEW E N G L A N D S E M I C O N D U C T O R STE D • b5b4^3 OOODOSfi DAT * N E S 3 VCEO SUS (V) 1C (MAX) W - / NPN TO-61 = 10-20A VcEO(SUS) = 8 0-1 00V fT = 10-50 MHz lc (M A X ) Type No. 3 ISOLATED COLLECTOR Case 8 0 6 tlFE 0 IC/VCE (mln-max @ A/V) VCE (SAT)

ed 9225

Abstract: 5566-2 molex 5566-02AS-210 5566-N RA 8040 5566-08A af/ADM206E/ADM207E/ADM208E/ADM211E/ed 9225
Contextual Info: 10 co 'ST LO 4 .2 — DIM. A F I n n I 4 I 5 In n M M fl«l ,|C M M 6il16m FIn n FI M M 6 |t QSO F I n n 14 II 5 1 F I n n 14 H5 1p in F I M 7|b M 10II 1 M M »il6 M B F I n n M M F in 0II H M 9 II 10 13 IS IT n n n M M F in 1BI 3 1 f,3| »i 6 M h 'l F I n n 14 I 5 16^

navmat p 4855-1

Contextual Info: \ S IC O R M I-R A M Military Ripple Attenuator Modules MI-RAM Specifications typical at Tbp = 25°C, nominal line, 75% load unless otherwise specified PARAMETER MIN MAX TYP REMARKS 3 mV pp MI-200; 10% to 100% load 10 mV pp MI-J00; 10% to 100% load Input Voltage Range

Contextual Info: LITEM Cl SEMICONDUCTORS M B R 1 3 t h r u M B R 1 6 V O LT A G E R ANG E 10 AM PS 30 to 60 V o lts SCHOTTKY BARRIER PECVFIEF CURRENT 10 Amperes FEATURES Plastic package has U /L Flam m ability Classification 94V-0 Exceeds environm ental standards o f M IL-S-19500

10945-I

Abstract: 569d
Contextual Info: S D -3 9 9 5 D -G 0 1 10 MATERIAL M . OPTIONAL JC*A ItfRINT à ± MATERIAL NO. NWBER CF M 9 OPTIQNI CIRCUITS ' x r Ù3 3 9 75 0-01 03 IH M . ’A " 1 . 13 I,O10> C*[M. "B " 2 4 .0 9 [Û.-gBI 16 .00 IO .6 3 0 I FRONT FERM]NAL V\Y I REAR TERMINAL GTY 2 3 9 75 0-01 04

Contextual Info: DRAWING No.: Customer Informaticin Sheet SHEET M 8 0 - 5 S 2 10 0 5 M L - 0 2 - 3 3 A - 0 4 - 3 3 A 2 OF 2 1 IF IN D O U B T - ASK i NOT i TO SCALE | THIRD ANGLE PROJECTION 1 ALL DIMENSIONS IN m m SPECIFICATIONS: MATERIAL: M O U L D I N G : G L A S S F I L L E D PPS, U L 9 4 V - 0 , B L A C K

Contextual Info: Ripple Attenuator Modules typical at TBp = 25°C, nominal line, 75% load unless otherwise specified Parameter Min. Typ. Max. Remarks Output Noise & Ripple VI-200 3 m V pp VI-J00 10 m V p p From 10% of full rated output current of the source converter to full load

mosfet 500v 10A

Contextual Info: MITSUBISHI Neh POWER MOSFET FK10SM-10 HIGH-SPEED SWITCHING USE FK1OSM-10 OUTLINE DRAWING D im e n s io n s in m m .4.5. 15.9MAX. 1.5 3.2 J rffä 3 fc r 4.4 1.0 5.45 5.45 0.6 4 Q w r V d s s . 50 0 V

Contextual Info: ANALOG DEVICES □ FEATURES D C Perform ance 400 |iA m ax Q uiescent Current 10 p A m ax B ias Current, W arm ed U p AD 648C 300 iiV m ax Offset V o ltag e (AD 648C) 3 |juV/°C m ax Drift (AD648C) 2 |xV p - p N oise, 0.1 Hz to 10 Hz A C Perform ance 1.8 V/|l s S le w Rate

Contextual Info: Customer Information Sheet D R A W I N G No.: M 8 3 L M L 3 M I N 1 9 0 10 1-333 | S H E E T 2 OF 2 IF IN D O U B T - ASK | c | NOT T O S C A L E | THIRD ANGLE PROJECTION I A LL D I M E N S I O N S IN m m SPECIFICATIONS: MATERIAL: MOULDING CONTACT No. SECTION

Contextual Info: Customer Informaticin Sheet DRAWING No.: M 8 0 - 5 T 10 4 2 2 M 3 - 0 4 - 3 3 2 - 0 0 - 0 0 0 SHEET 2 OF 2 1 IF IN D O U B T - ASK i NOT i TO SCALE | THIRD ANGLE PROJECTION 1 ALL DIMENSIONS IN m m SPECIFICATIONS: MATERIAL: M O U L D I N G : G L A S S F I L L E D PPS, U L 9 4 V - 0 , B L A C K

29740

Abstract: HA 13160 AK 16A 2150A1
Contextual Info: Jumpering system Q/QL • t R ated QL cu rrre n t Q o f the preassern Dled term inal Ju m p e r ^ VH é r - - - è —J Sti­ VDE A S AK B 10 47A Type Type No. pole! Cat. No. No. poles QL 3 Q L4 Q L 10 S A K O 10 27A QL 2 QL 3 QL 4 Q L 10 SAKH6 4 4A QL 2

FK20SM-10

Contextual Info: MITSUBISHI Neh POWER MOSFET F K 2 0 S M -1 0 HIGH-SPEED SWITCHING USE FK20SM-10 OUTLINE DRAWING Dimensions in mm 4.5 15 .9 M A X . 3.2 4 .4 1.0 5 .4 5 5 .4 5 0.6 If Q w Vd ' ss .500V . rDS ON (MAX) 0 .3 6 ÍÍ ID . 20A Integrated Fast Recovery Diode (M A X .)

Contextual Info: MITSUBISHI Neh POWER MOSFET FS20KMA-4A HIGH-SPEED SWITCHING USE FS20KMA-4A OUTLINE DRAWING D im e n s io n s in m m 10 ± 0 .3 • 10V • V d s s . 2 0 0 V •

Contextual Info: Customer Informatic>n Sheet DRAWING No.: M 8 0 - 5 T 10 4 2 2 M 3 - 0 2 - 3 3 2 - 0 0 - 0 0 0 SHEET 2 OF 2 j IF IN D O U B T - ASK i NOT i TO SCALE | THIRD ANGLE PROJECTION 1 ALL DIMENSIONS IN m m SPECIFICATIONS: MATERIAL: M O U L D I N G : G L A S S F I L L E D P PS , U L 9 4 V - 0 , B L A C K

Contextual Info: Customer Informatic>n Sheet DRAWING N o.: M 8 0 - 5 T 10 8 0 5 M 3 - 0 4 - 3 3 2 - 0 0 - 0 0 0 SHEET 2 OF 2 1 IF IN D O U B T - ASK i NOT i TO SCALE | THIRD ANGLE PROJECTION 1 ALL DIMENSIONS IN m m SPECIFICATIONS: MATERIAL: M O U L D I N G : G L A S S F I L L E D PPS, U L 9 4 V - 0 , B L A C K

xn 1049 dp

Abstract: atmel u122 o2c ADQ44 a6252 ic a6252 atmel 938 32c ADQ36 22B35 ad 11800 t8 ATMEL 812 24C
Contextual Info: This Document can not be used without Samsung's authorization. 7. Circuit Diagram 4 SE DONA Signature : 3 3 APPROVAL 2005/10/05 SEDONA MAIN BA41-#####A PR 0.81 CPU :Intel Y onah667 Chip Set :Intel Calistoga & ICH7-M Remarks : Mobility Platform : : : : : :

MSG180L41

Abstract: 4a2d 2X20 EMGE07-06A EMGE07-08A H-17 H-18 2108B-1 32C36 359RGA
Contextual Info: — 280 — V 4 '1 X 9 • M S G I8 0 o 4 I V im m m Ü C IU o îêî§ üüiîi MSG180G4Î ' W O ü iO U M l ÎIM I V MSC180.Y41- MSG180U41 2500V ■» K | ¡Ü C R 2 T ° 2 l -H o î | ( +) 3 (- ) 2 - 0 & 3 ia 2 \ 3-(M5X 10 ) * 2Û 0± Q 2 9 2 .0 1 0 .5