2X256X8 Search Results

IN24LC04B

Abstract: IN24LC08B 4X256X8
Contextual Info: TECHNICAL DATA IN24LC04B/08B 4K/8K 2.5V CMOS Serial EEPROMs DESCRIPTION IN24LC04B/08B is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and

KK24LC04

Abstract: KK24LC08
Contextual Info: TECHNICAL DATA KK24LC04/08 4K/8K 2.5V CMOS Serial EEPROMs DESCRIPTION KK24LC04/08 is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and

Sony CXA1191M

Abstract: philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide
Contextual Info: Untitled HAM RADIO FILE - Various pinouts saved from the Chipdir 2010 http://www.chipdir.org/ 0512d -0512d +-\/-+ 1 -|5V in gnd in|- 24 2 -|5V in gnd in|- 23 3 -|5V in gnd in|- 22

KK24LC04B

Abstract: KK24LC08B
Contextual Info: TECHNICAL DATA KK24LC04B/08B 4K/8K 2.5V CMOS Serial EEPROMs DESCRIPTION KK24LC04B/08B is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and

10KW

Abstract: 85C72 85C82 85C92 S5C82
Contextual Info: M i c r o c h 85C72/82/92 i p 1K/2K/4K 5.0V CMOS Serial EEPROM PACKAGETYPE Low power CMOS technology Two wire serial interface bus, l2C compatible 5 volt only operation Self-timed write cycle including auto-erase Page-write buffer 1ms write cycle time for single byte

Contextual Info: TOSHIBA TC55V8128BJ/BFT-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55V8128BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s

IN24LC04

Abstract: IN24LC08 4x256x8
Contextual Info: TECHNICAL DATA IN24LC04/08 4K/8K 2.5V CMOS Serial EEPROMs DESCRIPTION IN24LC04/08 is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and