2SKI302 Search Results
2SKI302 Datasheets Context Search
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Contextual Info: 4AK21 Silicon N-Channel Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance RDS on < 0.09 Q, Vo, = 10 V, ID = 4 A R ds(oii) —0.12 £2, \ GS = 4 V, ID = 4 A • Capable of 4 V gate drive • Low drive current |
OCR Scan |
4ak212ski3022sk1307sp-10 |