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2SK3866 Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SK386/6		Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	86.52KB	1

2SK3866 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK3866 Abstract: 2SK3866G Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV	Original	2002/95/ec 2sk3866g 2sk3866	PDF
2sk3866 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features  Package  Low noise voltage NV	Original	2002/95/ec 2sk3866	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features  Package  Low noise voltage NV	Original	2002/95/ec 2sk3866g	PDF
2SK3866 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV	Original	2002/95/ec 2sk3866	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV	Original	2002/95/ec 2sk3866	PDF
2SK3866 Abstract: 2SK3866G DIODE MARKING GV 2sk38 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV	Original	2002/95/ec 2sk3866g 2sk3866 diode marking gv +12sk38	PDF
2SK3866G Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV	Original	2002/95/ec 2sk3866g	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features  Package  Low noise voltage NV	Original	2002/95/ec 2sk3866	PDF
MIP2F3 Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the	Original	pamp13-n1 mip2f3 mip2f4 mip382 +7mip2e7dmy mip2f2 mip291 mip414s mip2e5dmy mip411 mip3e3smy equivalent	PDF
ma3df25 Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01 Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	respons39 o-220d-a1 ma26p02 maz3082j +152sc5779 ma26p07 maz3091 2sc5829 ma27e020g ma3df25 2pg011 dd5x062j dg3d501 dsktj04 da3df50 db2u308 ssmini2-f5-b dsk3j02 dsc3f01	PDF
2sc5929 Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	responsibilixp08081 xp08546 xp0a554 xp0d873 +13xp0d874 xp0d875 xp0e554 2sc5929 mn1280 transistor 2sc5929 3sk129 3sk97 2sc5928 2pg009 2sc5929 equivalent 2sk4000 2sd965 transistor replacement guide	PDF
2SC5936 Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	xp06501t xp06531 xp06545 xp0a554 +13xp0d873 xp0d874 xp0d875 2sc5936 2sc6073 panasonic transistor 2sc6073 2sc5929 mn1280 transistor 2sc6073 2sc5936 equivalent 2sc6074 transistor 2sc5929 2sc5928	PDF
mip411 Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291 Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the	Original	pamp13-n1 mip411 mip2f4 mip2f3 +7an12947a mip2f2 mip2f20ms mip2f40ms mip2e7dmy panasonic inverter dv 700 manual mip291	PDF