2SK370 TOSHIBA Search Results

2SJ108

Abstract: 2SK370
Contextual Info: TO SH IBA 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK370 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS • Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : |Yfs| = 22ms Typ. (VDS = 10V, VGS = 0, IDSS = 3mA)

2SK370

Abstract: 2SJ108
Contextual Info: 2SK370 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK370 For Low Noise Audio Amplifier Applications Unit: mm • Suitable for use as first stage for equalizer and MC head amplifiers. · High |Yfs|: |Yfs| = 22 ms typ. (VDS = 10 V, VGS = 0, IDSS = 3 mA)

2SJ108

Abstract: 2SK370 IDSS -6.5mA
Contextual Info: TOSHIBA 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK370 FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS • U nit in mm Suitable for Use as First Stage for Equalizer and MC Head 4.2MAX. Amplifiers. High |Yfc| : |Yfs | = 22ms Typ. (VDg = 10V, VGS = 0, IDg g = 3mA)

2SK370

Abstract: 2SJ108
Contextual Info: T O S H IB A 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK370 Unit in mm FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfe| : |Yfs| = 22ms Typ. (VD S=10V , VGS = 0, IDSS = 3mA)

2SJ108

Abstract: 2SK370 Toshiba 2SJ 2SK370 TOSHIBA
Contextual Info: 2SK370 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK370 For Low Noise Audio Amplifier Applications Unit: mm • Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 22 ms typ. (VDS = 10 V, VGS = 0, IDSS = 3 mA)

Contextual Info: 2SK370 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK370 For Low Noise Audio Amplifier Applications Unit: mm • Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 22 ms typ. (VDS = 10 V, VGS = 0, IDSS = 3 mA)

Contextual Info: TOSHIBA 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK370 Unit in mm FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : |Yfs| = 22ms Typ. (VDS = 10V, VGS = 0, IDSS = 3mA)

Toshiba 2SJ

Contextual Info: 2SK370 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK370 For Low Noise Audio Amplifier Applications Unit: mm • Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 22 ms typ. (VDS = 10 V, VGS = 0, IDSS = 3 mA)

2SK370 TOSHIBA

Abstract: 2SK370 2SJ108 Toshiba 2SJ
Contextual Info: 2SK370 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK370 For Low Noise Audio Amplifier Applications Unit: mm • Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 22 ms typ. (VDS = 10 V, VGS = 0, IDSS = 3 mA)

2SJ108

Abstract: 2SK370
Contextual Info: TO SH IB A 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK370 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfe| : |Yfs| = 22ms Typ. (VD S=10V , VGS = 0, IDSS = 3mA)

Contextual Info: TOSHIBA 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K3 7 Q FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm S u ita b le for U se as F ir s t S ta g e for E q u a liz e r a n d MC H e a d 4.2 VI A X . Amplifiers. TTiO“

Transistor 2sj108

Abstract: 2SJ108 2SK370 Toshiba 2SJ
Contextual Info: 2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and MC head amplifiers. • High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)

2SJ108

Abstract: 2SK370 Toshiba 2SJ
Contextual Info: 2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and MC head amplifiers. · High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)

2SK370 TOSHIBA

Abstract: 2SJ108 Toshiba 2SJ
Contextual Info: 2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and MC head amplifiers. • High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)

2SK370

Abstract: 2SJ108
Contextual Info: TOSHIBA 2SJ108 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2 S J 1 08 LOW NOISE AUDIO AMPLIFIER APPLICATIONS • U nit in mm Recommended for First Stages of EQ Amplifiers and MC Head 4.2MAX — Amplifiers. • High |Yfs| x: < I fSI ro 1

2SJ108

Abstract: 2SK370
Contextual Info: 2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and MC head amplifiers. • High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)

Contextual Info: TOSHIBA 2SJ108 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2 S J 1 08 LOW NOISE AUDIO AMPLIFIER APPLICATIONS • Unit in mm Recommended for First Stages of EQ Amplifiers and MC Head 4.2 VI A X . Amplifiers. • TTicrVi e >~ II V * lry Ji

Contextual Info: T O SH IB A 2SJ108 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2 S J 1 08 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS Recommended for First Stages of EQ Amplifiers and MC Head Amplifiers. 4 .2 M A X . H igh |Yfs| : |Yfs| = 22mS Typ. (VDS= —10V, VGS = 0, IDSS= -3m A )

2SK147BL

Abstract: 2SK147GR NF5102 LM3661TL-1.40 BSV79 BSV80 diode 6AB 2n4093 motorola 2N4095 2SK147-G
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS 9f. (V) (A) Min (S) Max VGS(off) Max (V) IGSS Max (A) C. Max (F) PD Max (W) Derate at TOper (WrC) eCl Max Package Style N-Chann I JFETs, (Co nt' d) 5 10 15 20 25 30 35 40 45 50 Jl13A MPF4858

transistor k117

Abstract: transistor k363 K369 k117 transistor transistor k364 transistor K246 K30ATM k117 equivalent K363 transistor k246 transistor
Contextual Info: 10-1 Small Signal Transistors Mini-Package Type •c (m A ) f j T Y P . (M IN ) V C E (sat) M A X . hFE PC (mW) CCE IV ) >C im A ) ‘c IV ) im A ) !8 Im A ) (M Hz) V CE (V ) !C Im A ) 2SA 1048 2 SC 2 4 5 8 50 150 200 70 ~ 4 0 0 /7 00 6 2 0 .3 /0 .2 5 100

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog