2SK3210STL Search Results

2SK3210STL Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SK3210STL		Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF	153.67KB	9

2SK3210STL Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK3210 Abstract: 2SK3210L 2SK3210STL Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	d-900 Unit2607 2SK3210 2SK3210L 2SK3210STL	PDF
2SK3210 Abstract: 2SK3210L 2SK3210STL Contextual Info: 2SK3210 L , 2SK3210(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G0414-0300 (Previous ADE-208-760A (Z) Rev.3.00 Sep. 30, 2004 Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	Original	2SK3210 REJ03G0414-0300 ADE-208-760A Av-900 Unit2607 2SK3210L 2SK3210STL	PDF
Contextual Info: Preliminary Datasheet 2SK3210 L , 2SK3210(S) R07DS0409EJ0400 (Previous: REJ03G0414-0300) Rev.4.00 May 16, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	Original	2SK3210 R07DS0409EJ0400 REJ03G0414-0300) PRSS0004AE-A PRSS0004AE-B Note14	PDF
Contextual Info: Preliminary Datasheet 2SK3210 L , 2SK3210(S) R07DS0409EJ0400 (Previous: REJ03G0414-0300) Rev.4.00 May 16, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	Original	2SK3210 R07DS0409EJ0400 REJ03G0414-0300) PRSS0004AE-A PRSS0004AE-B	PDF