2SK257 Search Results

2SK2579

Contextual Info: Panasonic P o w e r F -M O S F E T s 2SK2579 Tentative Silicon N-Channel Power F-MOS • Features • • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive ■ Applications •

2SK2571

Contextual Info: Panasonic P o w e r F - M O S FETs 2SK2571 Tentative S ilic o n N - C h a n n e l P o w e r F - M O S • Features U n it : m m • Avalanche energy capability guaranteed • High-speed switching * • Low ON-resistance • No secondary breakdown ■Applications

2SK2574

Abstract: AJ04 CR10000
Contextual Info: Panasonic P o w e r F -M O S F E T s 2SK2574 Tentative Silicon N-Channel Power F-MOS • Features • • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive ■ Applications •

Contextual Info: 2SK2572 Power F-MOS FETs 2SK2572 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed 10.0 2.0 1.2 secondary breakdown ● Solenoid relay 2.0 4.0 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 equipment ● Switching 5.5±0.3

Contextual Info: Panasonic Power F-MOS FETs 2SK2571 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown t r ■Applications • • • • •

Hitachi DSA002758

Contextual Info: 2SK2570 Silicon N-Channel MOS FET Low Frequency Power Switching ADE-208-574 1st. Edition Features • Low on-resistance R DS on = 0. 8Ω typ. (VGS = 4 V, I D = 100 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline 2SK2570 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: Power F-MOS FETs 2SK2573 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm (2.0) ● Contactless relay ● Diving circuit for a solenoid

Contextual Info: Power F-MOS FETs 2SK2571 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 2.0 ● Contactless relay ● Diving circuit for a solenoid

2SK2576

Contextual Info: Panasonic P o w e r F -M O S F E T s 2SK2576 Tentative Silicon N-Channel Power F-MOS • Features • Avalanche energy capability guaranteed • High-speed switching • Low ON-resistance • No secondary breakdown • Low-voltage drive ■ Applications • Non-contact relay

2SK2570

Abstract: 2SK2570ZL-TL-E 2SK2570ZL-TR-E SC-59A
Contextual Info: 2SK2570 Silicon N Channel MOS FET Low Frequency Power Switching REJ03G1019-0200 Previous: ADE-208-574 Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.8 Ω typ. (VGS = 4 V, ID = 100 mA) • 2.5 V gate drive devices. • Small package (MPAK)

2SK2570

Abstract: Hitachi DSA00238 A5150
Contextual Info: 2SK2570 Silicon N-Channel MOS FET Low Frequency Power Switching ADE-208-574 1st. Edition Features • Low on-resistance R DS on = 0. 8Ω typ. (VGS = 4 V, I D = 100 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK 3 1 2 D 1. Source 2. Gate

2SK2576

Contextual Info: Panasonic P o w e r F - M O S FETs 2SK2576 Tentative Silicon N -Channel Power F-M OS • Features • Avalanche energy capability guaranteed • High-speed switching • Low ON-resistance • No secondary breakdown • Low-voltage drive ■ Applications • Non-contact relay

2SK2573

Contextual Info: Panasonic P o w er F -M O S FE T s 2SK2573 Tentative S ilic o n N - C h a n n e l P o w e r F - M O S • Features U nit : mm • Avalanche energy capability guaranteed • High-speed switching £ t • Low ON-resistance • No secondary breakdown 5X ■Applications

2SK2577

Contextual Info: Panasonic P o w e r F -M O S F E T s 2SK2577 Tentative Silicon N-Channel Power F-MOS • Features • • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive ■ Applications •

Hitachi DSA002780

Contextual Info: 2SK2570 Silicon N-Channel MOS FET Low Frequency Power Switching ADE-208-574 1st. Edition Features • Low on-resistance RDS on = 0. 8Ω typ. (VGS = 4 V, ID = 100 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline 2SK2570 Absolute Maximum Ratings (Ta = 25°C)

Hitachi DSA00276

Contextual Info: 2SK2570 Silicon N-Channel MOS FET Low Frequency Power Switching ADE-208-574 Z 1st. Edition Aug. 1997 Features • Low on-resistance R DS(on) = 0. 8Ω typ. (VGS = 4 V, I D = 100 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK 3 1 2

2SK2574

Abstract: 2sk257
Contextual Info: Panasonic Power F-MOS FETs 2SK2574 Tentative Silicon N-Channel Power F-MOS • Features • • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive ■ Applications • • •

2SK2577

Contextual Info: Panasonic Power F-MOS FETs 2SK2577 Tentative Silicon N-Channel Power F-MOS • Features • • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive ■Applications • • •

2SK2578

Contextual Info: Panasonic P o w e r F -M O S F E T s 2SK2578 Tentative Silicon N-Channel Power F-MOS • Features • Avalanche energy capability guaranteed • High-speed switching • Low ON-resistance • No secondary breakdown • Low-voltage drive ■ Applications • Non-contact relay

2SK2572

Abstract: DC motor control 120w 30v
Contextual Info: Panasonic P ow er F -M O S FETs 2SK2572 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features • Avalanche energy capability guaranteed • High-speed switching • Low ON-resistance • No secondary breakdown 5X ■ Applications • Non-contact relay

Contextual Info: 2SK2578 Power F-MOS FETs 2SK2578 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed ø3.2±0.1 2.9±0.2 secondary breakdown ● Low-voltage drive ● Non-contact ● Solenoid ● Motor

Contextual Info: 2SK2574 Power F-MOS FETs 2SK2573 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed 10.0 2.0 1.2 secondary breakdown ● Solenoid relay 2.0 4.0 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 equipment ● Switching 5.5±0.3

Contextual Info: 2SK2570 Silicon N-Channel MOS FET Low Frequency Power Switching HITACHI Features • Low on-resistance RDS „n, = 0. m typ. (Vos = 4 V, ID = 1(M mA) • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK *2 1. Source 2. Gate 3. Drain 990 ADE-208-574

2SK2574

Abstract: 2SK1259 2SK2377 2SK2659 2SK2578
Contextual Info: • Power F-MOS FET Package Package No. 1Type (D44) N Type (D42) V gss Id (V) (V) (A) TO-220E (D59) 2SK1868 2SK1255 2SK2578 5 2SK2579 10 2SK1033 TOP-3F(a) (D63) V dss TC>-220F(a) (D55) 2SK1967 TOP-3(a) (D60) TOP-3E (D65) MT4 (D41) TOP-3L (D 67) 60 ATentative