2SK2564 Search Results

2sk2564

Abstract: F8F60VX2 29mJ
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2564 F8F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 600V 8A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

F8F60VX2

Abstract: 2sk2564
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2564 F8F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 600V 8A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.

2SK2564

Abstract: F8F60VX2 N channel 600v 8a mosfet 60
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2564 F8F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 600V 8A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.

Contextual Info: Power 1. Absolute MOS F E T Specification Maximum Ratings Symbol Item Condition Ratings Unit - 5 5 - 1 5 0 ”C Storage Temperature ^stg Channel Temperature ^ch 1 5 0 •c Drain-Source Voltage V dss 6 0 0 V Gate-Sourse Voltage V gss ±3 0 V Drain Current DC

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

Contextual Info: Pow er M O S F E T HVX series N-Channel, Enhancement type Part No. Absolute Maximum Ratings Electrical Characteristics R d s ON ton toff EIAJ Tch V dss V g ss ID Pt (max) (typ) (typ) No. [°C ] [V] [V] [A] [W ] [Q ] [ns] [ns] Package Fig. 1 10 50 30 70 100

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

2SK1411

Abstract: 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225
Contextual Info: STI Type: 2SK1358 Notes: Breakdown Voltage: 900 Continuous Current: 9 RDS on Ohm: 1.4 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.0 Gate Threshold min: 1.5 Gate Threshold max: 3.5 Resistance Switching ton: 80 Resistance Switching toff: 200 Resistance Switching ID: 4.0

Contextual Info: Power MOSFETs VX-II series N-Channel, Enhancement type /X X V 1 E-pack SMD Surface Mount E-pack (Lead type) V dss . ry i 2SK2177 2SK2178 2SK2179 Id . Pt . Ï.M . . Ï W I . _ . l y . i . . _ 10 15 20 40 ±30 ±30