2SK2380 Search Results

Infrared-Sensor

Abstract: 2SK2380 SC-75 ciss
Contextual Info: Silicon Junction FETs Small Signal 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor unit: mm 1.6±0.15 0.4 0.8±0.1 0.4 Ratings Unit VGDO −40 V Gate to Source voltage VGSO −40 V Drain current ID ±1

2SK2380

Contextual Info: 2SK2380 Silicon Junction FETs Small Signal 2SK2380 Silicon N-Channel Junction Unit : mm For impedance conversion in low frequency For infrared sensor 1.6±0.15 ● Small capacitance of Ciss, Coss , Crss ● Downsizing 0.4 0.5 +0.1 1 3 0.5 gate-source leakage current, IGSS

2SK2380

Abstract: SC-89
Contextual Info: Silicon Junction FETs Small Signal 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor unit: mm 0.80±0.05 0.28±0.05 (0.44) ● Low gate to source leakage current, IGSS ● Small capacitance of Ciss, Coss, Crss

Contextual Info: Silicon Junction FETs Small Signal 2SK2380J Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor 1.00±0.05 0.80±0.05 Unit: mm 1.60+0.05 –0.03 0.12+0.03 –0.01 2 VGDO Gate-source voltage (Drain open) VGSO Gate current

Infrared-Sensor

Abstract: latest Infrared-Sensor 2SK2380 SC-89
Contextual Info: Silicon Junction FETs Small Signal 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor unit: mm 0.80±0.05 0.28±0.05 (0.80) (0.80) Drain current Gate current Allowable power dissipation Channel temperature

2SK2380

Abstract: SC-75
Contextual Info: Silicon Junction FETs Small Signal 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor unit: mm 1.6±0.15 0.4 0.8±0.1 0.4 Ratings Unit VGDO −40 V Gate to Source voltage VGSO −40 V Drain current ID ±1

2SK2380J

Contextual Info: Silicon Junction FETs Small Signal 2SK2380J Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor 1.00±0.05 0.80±0.05 Unit: mm 1.60+0.05 –0.03 0.12+0.03 –0.01 Rating Unit Gate-drain voltage (Source open) VGDO

2SK2380

Abstract: SC-89
Contextual Info: Silicon Junction FETs Small Signal 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor M Di ain sc te on na tin nc ue e/ d unit: mm 0.12+0.05 – 0.02 0.88+0.05 – 0.03 3° (0.44) 1 2 1.60±0.05 (0.80) 3

Contextual Info: Silicon Junction FETs Small Signal 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor unit: mm • Features ● Low gate to source leakage current, IGSS ● Small capacitance of Ciss, Coss, Crss ● SS-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.

2SK2380J

Contextual Info: Silicon Junction FETs Small Signal 2SK2380J Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor 1.00±0.05 0.80±0.05 Unit: mm 1.60+0.05 –0.03 0.12+0.03 –0.01 Symbol Rating Unit Gate-drain voltage (Source open)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SK3585

Abstract: Infrared-Sensor 2SK3578 2SK3584 2sk0301 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent
Contextual Info: FETs, IPD, IGBTs, GaAs MMICs • Power Transistor Arrays F-MOS FETs Application Part No. Non-contact solenoid drive. Motor drive. Control equipment switching equipment. ✽: Ta=25 °C PUB4753 (PU7457) PUB4701 PUB4702 Absolute Maximum Ratings (TC = 25 °C)

3SK192

Abstract: 2SK651
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Electrical Characteristics Ta =25 °C (Ta = 2 5 “C) Package (No.) Application SS Mini Type S Mini Type (D5) (D1) Mini Type (D12) New S Type (D34) TO-92 (D46) V dso * V gds (V )

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and