2SK2367, Search Results

NEC 2506

Abstract: 2SK2367 2368 d1139 2SK2368 MP-88 D11397EJ4V0DS
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2367,2368 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high voltage switching applications. FEATURES • Low on-state resistance 2SK2367: RDS on = 0.5 Ω MAX. (VGS = 10 V, ID = 8.0 A)

2SK2367

Abstract: 6V84 2SK2368
Contextual Info: データ・シート MOS形電界効果トランジスタ MOS Field Effect Transistors 2SK2367,2368 NチャネルパワーMOS FET スイッチング用 2SK2367, 2368はNチャネル縦型 パワー MOS FETで，スイッチング特性が優れており，各種スイッチング電源用途

2SK2367

Abstract: 2SK2368 MP-88
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK2367

Abstract: 2SK2368 2368 d1139
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid