2SK2329S Search Results
2SK2329S Datasheets (9)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
---|---|---|---|---|---|---|---|
2SK2329S | Hitachi Semiconductor | Silicon N-Channel MOS FET | Original | 49.49KB | 10 | ||
2SK2329S | Hitachi Semiconductor | Mosfet Guide | Original | 6.15MB | 1147 | ||
2SK2329(S) | Hitachi Semiconductor | Power switching MOSFET | Original | 49.49KB | 10 | ||
2SK2329S | Kexin | N-Channel MOSFET | Original | 41.25KB | 1 | ||
2SK2329(S) |
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Silicon N Channel MOS FET | Original | 84.08KB | 8 | ||
2SK2329S |
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MOSFET, Switching; VDSS (V): 30; ID (A): 10; Pch : 20; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: 0.03; RDS (ON) typ. (ohm) @2.5V: 0.04; Ciss (pF) typ: 1250; toff ( us) typ: 0.225; Package: DPAK (S) | Original | 84.08KB | 8 | ||
2SK2329S |
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SMD, High Speed Power Amplifier, 30V 10A 20W, MOS-FET N-Channel enhanced | Original | 84.45KB | 14 | ||
2SK2329S |
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Silicon N-Channel MOS FET | Original | 61.32KB | 9 | ||
2SK2329S | TY Semiconductor | N-Channel MOSFET - TO-252 | Original | 186.7KB | 1 |
2SK2329S Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: Transistors IC SMD Type Type SMD Product specification 2SK2329S TO-252 Features Low on-resistance High speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 +0.1 0.80-0.1 0.127 |
Original |
2SK2329S O-252 | |
2SK23
Abstract: 2SK2329S
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Original |
2SK2329S O-252 2SK23 2SK2329S | |
rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
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Original |
REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 |