2SK2315TYTR Search Results

2SK2315TYTR Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SK2315TYTR		Renesas Technology	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 2A UPAK	Original	PDF		8
2SK2315TYTR-E		Renesas Technology	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 2A 4-UPAK	Original	PDF		8
2SK2315TYTR-E		Renesas Technology	Silicon N Channel MOS FET	Original	PDF	2.14MB	6

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Renesas Electronics Corporation


Renesas Electronics Corporation 2SK2315TYTR-E MOSFET N-CH 60V 2A UPAK
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DigiKey	2SK2315TYTR-E	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Renesas Electronics Corporation 2SK2315TYTR
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2SK2315TYTR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK2315TYTR Abstract: 2SK2315 2SK2315TYTL-E 2SK2315TYTR-E 2SK2315TY(TR-E) Contextual Info: 2SK2315 Silicon N Channel MOS FET REJ03G1006-0200 Previous: ADE-208-1354 Rev.2.00 Sep.07,2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source.	Original	2SK2315 REJ03G1006-0200 ADE-208-1354) PLZZ0004CA-A 2SK2315TYTR 2SK2315 2SK2315TYTL-E 2SK2315TYTR-E 2SK2315TY(TR-E)	PDF
2SK2315 Abstract: 2SK2315TYTL-E 2SK2315TYTR-E Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
2SK2315 Abstract: 2SK2315TYTL-E 2SK2315TYTR-E Contextual Info: 2SK2315 Silicon N Channel MOS FET REJ03G1006-0200 Previous: ADE-208-1354 Rev.2.00 Sep.07,2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source.	Original	2SK2315 REJ03G1006-0200 ADE-208-1354) PLZZ0004CA-A 2SK2315 2SK2315TYTL-E 2SK2315TYTR-E	PDF