2SD71 Search Results

2SD718

Abstract: 2sd718 amplifier AMPLIFIER 2SD718 2SB688
Contextual Info: Inchange Semiconductor Product Specification 2SD718 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P I package ・Complement to type 2SB688 APPLICATIONS ・Power amplifier applications ・Recommend for 45~50W audio frequency amplifier output stage

2SB688

Abstract: 2SD718 SC-65 AMPLIFIER 2SD718 transistor 2sd718
Contextual Info: 2SD718 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER ! ! ! SC-65 High Current Capability High Power Dissipation Complementary to 2SB688 ABSOLUTE MAXIMUM RATING TA=25oC Characteristic Collector-Base Voltage Collector-Emitter Voltage

2SD710

Contextual Info: 2SD710（保守用） FUJI POWER TRANSISTOR ＮＰＮ三重拡散プレーナ形 ハイパワーダーリントン TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON 高耐圧高速スイッチング用 HIGH VOLTAGE,HIGH SPEED SWITCHING 外形寸法 : Outline Drawings

2SD711

Abstract: 2sd711 equivalent 12AIB
Contextual Info: 2SD711（保守用） FUJI POWER TRANSISTOR ＮＰＮ三重拡散プレーナ形 ハイパワーダーリントン TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON 高耐圧高速スイッチング用 HIGH VOLTAGE,HIGH SPEED SWITCHING 外形寸法 : Outline Drawings

2sb688

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB688 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 0 3.2±0.2 FEATURES: . Complementary to 2SD718. V- . Recommended for AS'-SOW audio frequency amplifier output stage. ft n r + 0.3 0 1.0 — a 2 5 MAXIMUM RATINGS Ta=25°c

2SD717

Abstract: 30V reference diode
Contextual Info: Silicon Epitaxial Planar Transistor 2SD717 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-3P I D QUICK REFERENCE DATA SYMBOL VCBO VCEO IC ICM Ptot VCEsat VF tf

2SB688

Abstract: 2SD718 SC-65 transistor 2sd718 AMPLIFIER 2SD718 transistor 2SB688
Contextual Info: 2SB688 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 ! High Current Capability ! High Power Dissipation ! Complementary to 2SD718 ABSOLUTE MAXIMUM RATING Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage

2SC2801

Abstract: 2SD947 2SD549 2SD685 2SD728 2SD1878 2SD869 TOSHIBA 2SC1645 2sd1111 2SD727
Contextual Info: - 226 - m « Type No. * * *t € Manuf. m h SANYO 2SD 891 / fé T 2SD1111 2SD 892 fé T 2SD1U1 2SD 893 fé 2SD1153 T M. TOSHIBA B S NEC 31 HITACHI œ f I FUJITSU fé T MATSUSHITA 2SD892 H ft 2SD549 h ft 2SD716 2SD727 2SD 896 ^ H ft 2SD718 2SD728 2SD 897 S

Contextual Info: UTC 2SB688 PNP EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES * Complementary to 2SD718. * Recommended for 45 ~ 50W Audio Frequency Amplifier Output Stage. 1 TO-3P 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: 2SB688L

transistor 2sd718

Abstract: 2sd718 amplifier 2SB688 2SD718 AMPLIFIER 2SD718 50W AMP 2SD718 2SB688
Contextual Info: Æ&m o s p e c HIGH-POWER NPN SILICON POWER TRANSISTORS NPN .designed for use in general-purpose amplifier and switching application. 2SD718 FEATURES: * Recommend for 45 - 50W Audio Frequency Amplifier Output stage. * Complementary to 2SB688 8 AMPERE POWER

80m60

Contextual Info: TO S H I B A -CDISCRETE/OPTOJ 9097250 T O S H IB A Sb DE § 10^7250 0007347 4 CDI S C R E T E /O PTO J? J - 2/ / SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS) Unit in mm 15.9MAX. POWER AMPLIFIER APPLICATIONS. gf3.8±0.2 FEATURES: • Complementary to 2SD716.

Contextual Info: T O S H I B A { D I S C R E T E / O P T 5 > 9097250 TOSHIBA b D E 1 B T C H T E S D 7 3 ^ f i CD IS C R E T E /O PTO > SILICON PNP TRIPLE DIFFUSED TYPE_ Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 0z.2±o.z FEATURES: . Complementary to 2SD718.

B686

Abstract: sb686
Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SD716 Features • • • Power amplifier applications Complementary to 2S B686 Recommended for 30~30W high-fidelity frequency amplifier output

silicon npn 2SD716 transistor

Abstract: 2SD716
Contextual Info: 2SD716 SILICON EPITAXIAL PLANAR TRANSISTOR GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-3P I D QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat VF tf

2SD424 TOSHIBA

Abstract: 2sd472 2SC1818 MG50G2CL3 2SD873 2sd4242 2SD424 2SD335 2SD650 2SD718
Contextual Info: - 216 - s « T y p e No. a « Manuf. m h S AN YO JE *ï TOSHIBA 2SD 492 ^ h □ — ^ 2SD 493 ^ ï h a - 7 2 SD 718 2SD 494 ^ í h □ 2SD718 2SD 490 ^ h 2SD 499 ^ i h □ — "5 2SD1148 J Í h□ — ^ T ± 2S D 1 1 4 8 X 2 s $ S: s: M 2£ 0 ÏZ y -—

2SB686

Abstract: 2sd716
Contextual Info: SavantIC Semiconductor Product Specification 2SB686 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SD716 APPLICATIONS ·Power amplifier applications ·Recommend for 30~35W high-fidelity audio frequency amplifier output stage

audio output TRANSISTOR PNP 2SB686

Abstract: transistor2sb686 2SB686 2sb686 transistor 2SD716, 2SB686 35W amplifiers 35W amplifiers 2SD716 transistor 2sb686
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB686 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·Good Linearity of hFE ·Complement to Type 2SD716 APPLICATIONS ·Power amplifier applications

TOSHIBA 2SB686

Abstract: 2SB686 2SD716
Contextual Info: 2 S P C 8 6 siLicQN pNp triple d|ffused type pcT process Unit in mm POWER AMPLIFIER APPLICATIONS. • • Complementary to 2SD716. Recommended for 30~35W High-Fidelity Audio Frequency Amplifier Output Stage. m Ï -c MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2SB686

Abstract: 2SD716
Contextual Info: 2SB686 SILICON PNP TRIPLE DIFFUSED TYPE Unit in 03.2±O.2 15.9MAX. POWER AMPLIFIER APPLICATIONS. FEATURES: • Complementary to 2SD716. • Recommended for 30 'o 35W High-Fidelity Audio □ Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C SYMBOL

TOSHIBA 2SB686

Abstract: 2SD716 toshiba 2SD716
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD716 Unit in mm 15.9MAX- POWER AMPLIFIER APPLICATIONS. 03£±OJZ FEATURES: • Complementary to 2SB686. * Recommended fo.r 30 ^ 35W High-Fidelity Audio Frequency Amplifier Output Stage. + 0.30 L0 -0 .2 5 MAXIMUM RATINGS Ta*25dC

2sd717

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD717 industrial applications _ Unit in mm 15.9MAX. # 3 l2 ± Q 2 HIGH POWER SWITCHING APPLICATIONS. DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS. FEATURES: • Low Collector Saturation Voltage : V c E s a t ” 0.4V (Max.), (IC-6A)

2SD717

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD717 INDUSTRIAL APPLICATIONS Unit in mm 9 MAX. 0S.2±a2 HIGH POWER SWITCHING APPLICATIONS. DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS. FEATURES: • Low Collector Saturation Voltage : vCE sat =0-4v (Max.), (Ic=6A) • High Collector Power Dissipation : Pg=80W (Tc=25°C)

transistor 2sd718

Abstract: 2SD718 2sd718 transistor 2SD718 o 2sd718 amplifier transistor 2SB688 2SB688 80 V NPN epitaxial silicon transistor applications of single stage common emitter
Contextual Info: UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45~50W Audio Frequency *Amplifier Output Stage. *Complementary to 2SB688. 1 TO-3P 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARAMETER

transistor 2SB688

Abstract: 50W TRANSISTOR AUDIO AMPLIFIER 2SB688 2SD718 transistor 2sd718 2sd71 AMPLIFIER 2SD718
Contextual Info: UTC 2SB688 PNP EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES * Complementary to 2SD718. * Recommended for 45 ~ 50W Audio Frequency Amplifier Output Stage. 1 TO-3P 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: 2SB688L