2SD2606 Search Results

2SD2606

Abstract: 2sd26
Contextual Info: Power Transistors 2SD2606 Silicon NPN diffusion planar type Darlington Unit: mm For power amplification M Di ain sc te on na tin nc ue e/ d • Features 1.4 ■ Absolute Maximum Ratings 2.54±0.3 Symbol Ratings Unit 500 V 400 V 12 V 14 A 7 A VCBO VCEO Emitter to base voltage

Contextual Info: Power Transistors 2SD2606 Silicon NPN diffusion planar type Darlington Unit: mm For power amplification 10.5±0.3 4.6±0.2 1.4 Extremely satisfactory linearity of the forward current transfer ratio hFE High collector to base voltage VCBO Wide area of safe operation ASO

W6010

Abstract: 2SD2606 npn darlington 6A 400V Ic C 141 Ic 2543
Contextual Info: Power Transistors 2SD2606 Silicon NPN diffusion planar type Darlington Unit: mm For power amplification ● 1.4 1.4±0.1 0.8±0.1 • Absolute Maximum Ratings 2.54±0.3 Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and