2SD245 Search Results

hfe 2500

Abstract: 2SD2453
Contextual Info: Transistors SMD Type Silicon NPN Triple Diffusion Planar Type 2SD2453 TO-252 Features 6.50 +0.2 5.30-0.2 High forward current transfer ratio hFE. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127

2SD2457

Contextual Info: Transistor 2SD2457 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● High collector to emitter voltage VCEO. Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment

2SD2459

Contextual Info: Transistor 2SD2459 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20

Contextual Info: Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20 • High collector-emitter voltage Base open VCEO • Low collector power dissipation PC

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599G Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2457G • Package ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini Power type package, allowing downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2459 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20

2SB1599

Abstract: 2SD2457
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 Parameter Collector-emitter voltage (Base open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2459G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C

2SB1599

Abstract: 2SA699 2SA699A 2SD2457 2SA699 H
Contextual Info: Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Complementary to 2SD2457 Unit: mm 45° • Absolute Maximum Ratings * 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 2.5±0.1 0.4±0.04 di p Pl lan nclu ea e se pla m d m des

2SB1599G

Abstract: 2SD2457G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599G Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2457G • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro

2SD2457

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ M Di ain sc te

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2453 Silicon NPN triple diffusion planar type Unit: mm 0.8 max. 2.5±0.1 • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2459 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20

2SB1599

Abstract: 2SD2457
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 M Di ain sc te

Contextual Info: Transistors SMD Type Product specification 2SD2459 Features High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE sat . Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO 150 V Collector to emitter voltage

2SD2457G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457G Silicon NPN epitaxial planar type For low-frequency output amplification • Package • High collector-emitter voltage (Base open) VCEO • Low collector power dissipation PC

2SB1599

Abstract: 2SD2457
Contextual Info: Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 • Low collector-emitter saturation voltage VCE sat • Mini Power type package, allowing downsizing of the equipment

2SD2459

Contextual Info: Transistor 2SD2459 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment

2SB1599G

Abstract: 2SD2457G 2sb15
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For power amplification Complementary to 2SD2457G ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo

2SD2457

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 M Di ain sc te on na tin nc ue e/ d 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 2.5±0.1

2SA699

Abstract: 2SA699A 2SB1599 2SD2457 2SA699 H
Contextual Info: Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Complementary to 2SD2457 Unit: mm 45° • Absolute Maximum Ratings * 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment