2SD200 Search Results

2SD2000

Contextual Info: Inchange Semiconductor Product Specification 2SD2000 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High-speed switching ·Large collector power dissipation APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base

2SD200

Contextual Info: SavantIC Semiconductor Product Specification 2SD200 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·For color TV horizontal output applications PINNING see fig.2 PIN

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2000 Silicon NPN triple diffusion planar type Unit: mm Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO

2SD200

Contextual Info: Inchange Semiconductor Product Specification 2SD200 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3 package ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·For color TV horizontal output applications PINNING see fig.2

2SD2005

Abstract: 1FS transistor TRANSISTOR C 369 transistor 2sD2005
Contextual Info: 2SD2005 Transistor, NPN Features Dimensions Units : mm • available in MRT package • high collector power dissipation: Pc = 1.2 W suitable for use at low voltage because transistor has a low saturation voltage, typically V CE(sat) = 0.15 V at lc/lB = 500 mA/50 mA

2SD2004

Abstract: transistor 2SD2004 T1052 2SB1328
Contextual Info: 2SD2004 Transistor, NPN Features Dimensions Units : mm available in MRT package 2SD2004 (MRT) high breakdown voltage, typically BVC E0= 160 V 6 5 ± 0.2 r~ high transition frequency and small output capacitance wide safe operating area (SOA) complementary pair with 2SB1328

2SB1330

Abstract: 2SD2006 2sb transistor mrt package transistor 2SB
Contextual Info: 2SB1330 Transistor, PNP Features Dimensions Units : mm • available in MRT package • high breakdown voltage and current capacity VCE0 = -80 V, lc = -0.7 A • complementary pair with 2SD2006 2SB1330 (MRT) 6.5 ± 0.2 Applications • 3.4 ±0.2 1.0 medium power amplifier and

2sd2004

Abstract: 2SB1328 transistor 2SD2004
Contextual Info: h ÿ > V 7 $ / I ransistors 2SD2004 2SD2004 11: £ * V NPN > U U > h -7 > V 7s $ Epitaxial Planar NPN Silicon Transistor * *> *S *1 /S /M e d iu m Power Amp. /Dimensions Unit : mm 1) * i K K T ' i > £ 0 BVcEO=160V 2) S O A tf'lA l'o 3) fT *>'•#< , C o b ^ J ^ l ' o

2SD2008

Contextual Info: h 7 > y X í ¡ /Transistors 2 S D 2 2SD2008 1 NPN y U =¡ 7> y7 Epitaxial Planar NPN Silicon Transistor Power Amp. 8 > h $ • ^ jfí'ra jlS I/D im e n s io n s Unit : mm • të ê 1) V C E O = 8 0 V t ^ L ' o 6.510.2 3.41 0.2 2) lc = 1 A £ ± È \ . 'o

2SD2009

Abstract: hFE-15000
Contextual Info: h "7 > V 7s $ /Transistors 2SD2009 2SD2009 * - y > b > & m Epitaxial Planar NPN Silicon Transistor (Darlington) /M e d iu m Power Amp. • £Hfi\f'iil3l/Dim ensions (Unit : mm) 1) h > f t » T ' * h FE T i > 5 o 6.5 + 0.2 3.4+0.2 hFE=15000 (Typ.) (V c e = 3V, lC= 5 00 m A )

2SD2000

Contextual Info: Power Transistors 2SD2000 2SD2000 Silicon NPN Triple-Diffused Planar Type Power Switching • Features • • • • High speed sw itching Good linearity of DC cu rren t gain I Large collector pow er dissipation (Pc) “Full P ack” package for simplified m ounting on a heat sink w ith one

2SD2000

Contextual Info: SavantIC Semiconductor Product Specification 2SD2000 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High-speed switching ·Large collector power dissipation APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base

2SB1329

Abstract: 2SD2005
Contextual Info: 2SB1329 Transistor, PNP Features Dimensions Units : mm • available in MRT package • high power, Pc = 1.2 W • low collector saturation voltage, typically VCE(sat) = -0.2 V at Iq/I b = -500 mA/-50 mA • complementary pair with 2SD2005 2SB1329 (MRT)

2SD2000

Contextual Info: Power Transistors 2SD2000 Silicon NPN triple diffusion planar type Unit: mm 16.7±0.3 14.0±0.5 • High-speed switching • Satisfactory linearity of forward current transfer ratio hFE • Large collector power dissipation PC • Full-pack package which can be installed to the heat sink with one

2SD2000

Contextual Info: Power Transistors 2SD2000 Silicon NPN triple diffusion planar type For power switching Unit: mm • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 60 V Emitter to base voltage

2SD2000

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2000 Silicon NPN triple diffusion planar type Unit: mm 10.0±0.2 4.2±0.2 5.5±0.2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

Contextual Info: Power Transistors 2SD2000 Silicon NPN triple diffusion planar type Unit: mm 16.7±0.3 14.0±0.5 • High-speed switching • Satisfactory linearity of forward current transfer ratio hFE • Large collector power dissipation PC • Full-pack package which can be installed to the heat sink with one

2sd2009

Abstract: 2sd transistors equivalent HA2000 HA-2000
Contextual Info: 2SD2009 Transistor, NPN, Darlington Features Dimensions Units : mm • available in MRT package • Darlington connection provides high dc current gain, typically hFE = 15000 at V qe = 3 V, Iq = 500 mA • high input impedance 2SD2009 (MRT) 6.5 ± 0.2 r

2SD2007

Abstract: 2SB1331
Contextual Info: h 7 > y 7. $ / I ransistors 2SD2007 2SD2007 1 1 T V j\ s - - y %NPN > U =l> h -7> y 7 ,$ Epitaxial Planar NPN Silicon Transistor * m * > * lílf f l/M e d iu m Power Amp. • • ÿi-ffi^üO /D im ensions Unit : mm) 1) Ic m = 2 .5 A P c = 1 .2 W <r)±&t>o

2SD200

Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR 2SD200 COLOR TV HORIZONTAL OUTPUT APPLICATIONS No Damper Diode TO-3 ! ! High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (TA=25℃ ℃) Characteristic Collector-Base Voltage

2SD2037

Abstract: 2SD2001 2SD1993 2SD1995 2sd2033 2SD1988 2SD1989 2SD1990 2SD1991A 2SD1992A
Contextual Info: - 276 - 13=25*0, *Ep[àTc=25Tï M 2SD1988 2SD1989 2SD1990 2SD1991A 2SD1992A 2SD1993 2SD1994A 2SD1995 2SD1996 2SD1997 2SD1998 2SD1999 2SD2000 2SD2001 2SD2Q12 2SD2014 2SD20Î5 2SD2016 2SD2017 2SD2018 2SD2019 2SD2022 2SD2023 2SD2024 2SD2025 2SD2027 2SD2028

2SD2000

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2000 Silicon NPN triple diffusion planar type Unit: mm 10.0±0.2 4.2±0.2 5.5±0.2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

2SD2000

Contextual Info: Power Transistors 2SD2000 Silicon NPN triple diffusion planar type Unit: mm Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 80 V Collector-emitter voltage (Base open) VCEO 60 V Emitter-base voltage (Collector open) VEBO 6 V Collector current

2SD2000

Contextual Info: Power Transistors 2SD2000 Silicon NPN triple diffusion planar type Unit: mm 16.7±0.3 14.0±0.5 • High-speed switching • Satisfactory linearity of forward current transfer ratio hFE • Large collector power dissipation PC • Full-pack package which can be installed to the heat sink with one