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    2SD1221 TOSHIBA Search Results

    2SD1221 TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB6586BFG
    		Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Controller/Vout(V)=18/Square Wave Datasheet
    TC78B006AFNG
    		Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/1 Phase Pre Driver/Vout(V)=40/Square, Sine Wave Datasheet
    TB62216FTG
    		Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/2ch/Vout(V)=40/Iout(A)=2.5 Datasheet
    TB6613FTG
    		Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/8ch/Vout(V)=6/Iout(A)=0.8 Datasheet
    TB67H303HG
    		Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=10 Datasheet

    2SD1221 TOSHIBA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)


    Original     		2SD1221 2SB906 PDF

    2sd1221 toshiba

    Abstract: D1221 2SB906 2SD1221
    Contextual Info: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)


    Original     		2SD1221 2SB906 2sd1221 toshiba D1221 2SB906 2SD1221 PDF

    2SB906

    Abstract: 2SD1221 D1221
    Contextual Info: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A)


    Original     		2SD1221 2SB906 2SB906 2SD1221 D1221 PDF

    D1221

    Abstract: 2SB906 2SD1221
    Contextual Info: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage · High power dissipation: PC = 20 W (Tc = 25°C) · Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)


    Original     		2SD1221 2SB906 D1221 2SB906 2SD1221 PDF

    Contextual Info: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)


    Original     		2SD1221 2SB906 PDF

    d1221

    Abstract: 2SD1221 2SB906
    Contextual Info: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)


    Original     		2SD1221 2SB906 d1221 2SD1221 2SB906 PDF

    d1221

    Abstract: 2SB906 2SD1221
    Contextual Info: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)


    Original     		2SD1221 2SB906 d1221 2SB906 2SD1221 PDF

    d1221

    Abstract: 2SB906 2SD1221
    Contextual Info: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)


    Original     		2SD1221 2SB906 d1221 2SB906 2SD1221 PDF

    2SD1221

    Abstract: 2sd1221 toshiba 2SB906
    Contextual Info: 2SD1221 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S D 1 221 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • Unit in mm Low Collector Saturation Voltage : VCE (sat) - °-4 v (Typ.) High Power Dissipation : Pg = 20 W


    OCR Scan     		2SD1221 2SB906 2SD1221 2sd1221 toshiba PDF

    2SB906

    Abstract: 2SD1221 2sd1221 toshiba
    Contextual Info: TO SHIBA 2SD1221 2 S D 1 221 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION. • Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) High Power Dissipation : P0 = 2OW Complementary to 2SB906


    OCR Scan     		2SD1221 2SB906 2SD1221 2sd1221 toshiba PDF

    Contextual Info: 2SD1221 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. • • • Low Collector Saturation Voltage : Vc e (sat) = 0.4V (Typ.) High Power Dissipation P n = 9.0W Complementary to 2SB906


    OCR Scan     		2SD1221 2SB906 PDF

    2SD1221

    Contextual Info: TOSHIBA TRANSISTOR 2SD1221 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mm FEATURES: . Low Collector Saturation Voltage : vCE(sat)=0.4V(Typ.) (Ic=3A, Ir =0.3A) . High Power Dissipation : Pc=20W (Tc=25°C)


    OCR Scan     		2SD1221 2SB906 2SD1221 PDF

    Contextual Info: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)


    Original     		2SB906 2SD1221 PDF

    2SB906

    Abstract: 2SD1221 B906
    Contextual Info: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)


    Original     		2SB906 2SD1221 2SB906 2SD1221 B906 PDF

    2SD1221

    Abstract: 2SB906
    Contextual Info: 2SD1221 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S D 1 221 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • Unit in mm Low Collector Saturation Voltage : VCE (sat) - °-4 v (Typ.) High Power Dissipation : Pg = 20 W


    OCR Scan     		2SD1221 2SB906 2SD1221 PDF

    B906

    Abstract: 2SB906 2SD1221
    Contextual Info: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)


    Original     		2SB906 2SD1221 B906 2SB906 2SD1221 PDF

    transistor B906

    Abstract: B906 2SB906 2SD1221 B-906
    Contextual Info: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)


    Original     		2SB906 2SD1221 transistor B906 B906 2SB906 2SD1221 B-906 PDF

    Contextual Info: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)


    Original     		2SB906 2SD1221 PDF

    2SD1221

    Abstract: 2SB906 2sd1221 toshiba
    Contextual Info: TOSHIBA 2SD1221 2 S D 1 221 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • Low Collector Saturation Voltage : VCE (sat) = °-4 v (TyP-) High Power Dissipation : Pg = 20 W


    OCR Scan     		2SD1221 2SB906 2SD1221 2sd1221 toshiba PDF

    Contextual Info: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)


    Original     		2SB906 2SD1221 PDF

    Contextual Info: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)


    Original     		2SB906 2SD1221 PDF

    Contextual Info: T O S H IB A 2SD1221 2 S D 1 221 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION. • • • (A) Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) High Power Dissipation : P q = 20W


    OCR Scan     		2SD1221 2SB906 95MAX --50mA, PDF

    transistor B906

    Abstract: 2SB906 7B1A B-906 B906 2SD1221
    Contextual Info: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 • ハイブリッド対応外形の (B) 2SB906 (LB) もあります。


    Original     		2SB906 2SD1221 transistor B906 2SB906 7B1A B-906 B906 2SD1221 PDF

    Contextual Info: TOSHIBA 2SD1221 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S D 1 221 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION U nit in mm 6.8MAX. (A) • 5.2 Low Collector Saturation Voltage ±0.2 c J : V CE (sat) = °-4 v (Typ.) • High Power Dissipation : P q = 20 W


    OCR Scan     		2SD1221 2SB906 PDF