2SCR554 Search Results

Contextual Info: 2SAR554P 2SAR554PFRA Datasheet PNP -1.5A -80V Middle Power Transistor AEC-Q101 Qualified lOutline Parameter Value VCEO IC -80V -1.5A MPT3 Base Collector Emitter 2SAR554PFRA 2SAR554P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR554PFRA

Contextual Info: 2SAR554P Datasheet PNP -1.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -1.5A MPT3 Base Collector Emitter 2SAR554P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR554P 3) Low VCE(sat)

2SCR554

Abstract: T100 2SCR554P
Contextual Info: Midium Power Transistors 80V / 1.5A 2SCR554P  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 500mA / 25mA) (1) 2) High speed switching  Applications

2SCR554

Abstract: IB27 RESERVED35
Contextual Info: Midium Power Transistors 80V / 1.5A 2SCR554R  Features 1) Low saturation voltage, typically V CE (sat) = 0.3V (Max.) (I C / I B= 500mA / 25mA)  Dimensions (Unit : mm) TSMT3 2) High speed switching (3) (1)  Structure NPN Silicon epitaxial planar transistor

Contextual Info: Midium Power Transistors 80V / 1.5A 2SCR554R  Features 1) Low saturation voltage, typically V CE (sat) = 0.3V (Max.) (I C / I B= 500mA / 25mA)  Dimensions (Unit : mm) TSMT3 2) High speed switching (3) (1)  Structure NPN Silicon epitaxial planar transistor

Contextual Info: 2SCR554R Datasheet NPN 1.5A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 1.5A TSMT3 Collector Base Emitter 2SCR554R SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR554R 3) Low VCE(sat) VCE(sat)=0.30V(Max.)

Contextual Info: 2SAR554R Datasheet PNP -1.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -1.5A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR554R 3) Low VCE sat) VCE(sat)= -0.4V(Max.) (IC/IB= -500ｍA/ -25mA)

2SCR554P

Contextual Info: Midium Power Transistors 80V / 1.5A 2SCR554P  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 500mA / 25mA) (1) (2) (3) 2) High speed switching

Contextual Info: Midium Power Transistors 80V / 1.5A 2SCR554R  Features 1) Low saturation voltage, typically V CE (sat) = 0.3V (Max.) (I C / I B= 500mA / 25mA)  Dimensions (Unit : mm) TSMT3 2) High speed switching (3) (1)  Structure NPN Silicon epitaxial planar transistor

Contextual Info: 2SCR554P 2SCR554PFRA Datasheet NPN 1.5A 80V Middle Power Transistor AEC-Q101 Qualified lOutline Parameter Value VCEO IC 80V 1.5A MPT3 Base Collector Emitter 2SCR554PFRA 2SCR554P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR554PFRA

Contextual Info: 2SCR554P Datasheet NPN 1.5A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 1.5A MPT3 Base Collector Emitter 2SCR554P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR554P 3) Low VCE(sat) VCE(sat)=0.30V(Max.)

Contextual Info: Midium Power Transistors 80V / 1.5A 2SCR554P  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 500mA / 25mA) (1) (2) (3) 2) High speed switching

2SC6144

Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
Contextual Info: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.